28 GHz 1.8 dB Insertion Loss SPDT Switch with 24 dB Isolation in 65 nm CMOS

Jang, Seunghyun; Kong, Sunwoo; Lee, Hui-Dong; Park, Jeehoon; Kim, Kwang-Seon; Lee, Kwang-Chun

doi:10.23919/eumc.2018.8541696

Cited by 18 publications

(2 citation statements)

References 9 publications

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“…A DNW transistor is offered in the 0.13 µm CMOS process for better substrate isolation with an additional PN junction 11 . Figure 1D presents the simple structure of DNW, to implement the floating‐body technique, the body is connected to ground through a 5 kΩ resistor, and the DN keeps a high level.…”

Section: Floating‐body Techniquementioning

confidence: 99%

High isolation and high power of 0.13 µm CMOS SPDT switch using deep‐N‐well transistors and floating‐body technique in K‐band

Wang

Cheng

Wei

et al. 2023

Micro & Optical Tech Letters

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A K‐band high isolation single‐pole double‐throw (SPDT) switch using a 0.13 µm CMOS process is presented. Two on‐state resistors of shunt Deep‐N‐Well (DNW) transistors are used to improve isolation. The floating‐body technique is utilized to enhance the power‐handling capability. The off‐state capacitors of two DNW transistors are employed to construct an impedance‐matching network. The switch achieves a measured insertion loss of 3.0–3.2 dB and an isolation of better than 35 dB from 17 to 27 GHz. A measured input 1 dB compression power (IP1dB) of 11.8 dBm is obtained at 24 GHz. The chip size of the proposed switch is 0.52 × 0.66 mm2 with a core area of only 0.33 × 0.27 mm2.

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Section: Floating‐body Techniquementioning

confidence: 99%

High isolation and high power of 0.13 µm CMOS SPDT switch using deep‐N‐well transistors and floating‐body technique in K‐band

Wang

Cheng

Wei

et al. 2023

Micro & Optical Tech Letters

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“…or the combination of series and shunt elements [5], [10]. The multiple cascaded shunt SPDT is usually spaced with quarter wavelength of transmission lines and ideally used for high-power application.…”

mentioning

confidence: 99%

SPDT discrete switch design using switchable SIW resonators for millimeter wave MIMO transceiver

Zolkefli

Ahmad²,

Shairi³

et al. 2021

IJEECS

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A single pole double throw (SPDT) discrete switch design using switchable substrate integrated waveguide (SIW) resonators is proposed in this paper. It was designed for the millimeter wave multiple input multiple output (MIMO) transceiver. An example application is for 5G communication in 26 GHz band. High isolation between transmitter and receiver (in the transceiver) is needed in SPDT switch design to minimize any high radio frequency (RF) power leakage in the receiver. Therefore, the use of switchable SIW resonators can achieve higher isolation if compared to the conventional series SPDT switch, where the isolation of the proposed SPDT is depend on the bandstop response of the SIW resonators. The switchable SIW resonators can be switched between allpass and bandstop responses to allow the operation between transmit and receive modes. As a result, the simulation and measurement showed that the proposed SPDT switch produced an isolation higher than 25 dB from 24.25 to 27.5 GHz compared to the conventional design.

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SICL based Ka-band series SPDT switch for duplexer application

Shukla,

Mukherjee

2024

Int. J. Microw. Wireless Technol.

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This paper presents a Ka-band series single-pole double-throw (SPDT) switch circuit realized in substrate-integrated coaxial line (SICL) environment for time division duplex operation. It is designed with a low-cost printed circuit board (PCB) technique. The size of the proposed circuit is $3.1\lambda_{g} \times 5.9\lambda_{g}$ , where λg is the guided wavelength at the center frequency of 27.75 GHz. In this circuit, a SICL-based SPDT switching circuit is proposed with radio frequency (RF) isolation network where the shunt connection of butterfly stubs is in an asymmetric stripline environment. The proposed circuit exhibits less than 2 dB insertion loss at 27–27.9 GHz and less than 2.5 dB insertion loss at 27–28.5 GHz. The design offers good impedance matching in the Transmit (Tx) and Receive (Rx) channels from the common Tx/Rx input channel, along with more than 24 dB isolation between ON and OFF state output channels. The proposed circuit is suitable for millimeter-wave communication systems.

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28 GHz 1.8 dB Insertion Loss SPDT Switch with 24 dB Isolation in 65 nm CMOS

Cited by 18 publications

References 9 publications

High isolation and high power of 0.13 µm CMOS SPDT switch using deep‐N‐well transistors and floating‐body technique in K‐band

High isolation and high power of 0.13 µm CMOS SPDT switch using deep‐N‐well transistors and floating‐body technique in K‐band

SPDT discrete switch design using switchable SIW resonators for millimeter wave MIMO transceiver

SICL based Ka-band series SPDT switch for duplexer application

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