Self-Powered Ultrabroadband Photodetector Monolithically Integrated on a PMN–PT Ferroelectric Single Crystal

Fang, Huajing; Xu, Chao; Ding, Jie; Li, Qiang; Sun, Jia; Dai, Jiyan; Ren, Tian; Yan, Qingfeng

doi:10.1021/acsami.6b10305

Cited by 46 publications

(38 citation statements)

References 40 publications

(47 reference statements)

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“…Compared to other photodetection mechanisms, i.e., photovoltaic, photoconductive and bolometric, the PTE effect can achieve ultra-broadband detection without external bias at room temperature (RT) 3 . Although the pyroelectric effect also possesses these two important features, an external chopper is required in the case of continuous-wave (CW) light detection 4 . Recently, the photo-induced thermo-phototronic effect 5 and pyro-phototronic effect 6,7 have been demonstrated to greatly enhance the performances of photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

2019

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The self-powered and ultra-broadband photodetectors based on photothermoelectric (PTE) effect are promising for diverse applications such as sensing, environmental monitoring, night vision and astronomy. The sensitivity of PTE photodetectors is determined by the Seebeck coefficient and the rising temperature under illumination. Previous PTE photodetectors mostly rely on traditional thermoelectric materials with Seebeck coefficients in the range of 100 μV K−1, and array structures with multiple units are usually employed to enhance the photodetection performance. Herein, we demonstrate a reduced SrTiO3 (r-STO) based PTE photodetector with sensitivity up to 1.2 V W−1 and broadband spectral response from 325 nm to 10.67 μm. The high performance of r-STO PTE photodetector is attributed to its intrinsic high Seebeck coefficient and phonon-enhanced photoresponse in the long wavelength infrared region. Our results open up a new avenue towards searching for novel PTE materials beyond traditional thermoelectric materials for low-cost and high-performance photodetector at room temperature.

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Section: Introductionmentioning

confidence: 99%

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

2019

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“…It is therefore revealed that our self‐powered PDs has broadband response from UV to NIR, whose performance is comparable or even better than that of other PDs that are sometimes fabricated by a complicated method. [ 14–18,38,39 ] Note that the broadband response is also observed in the SnS 2 /ZnO devices presented in Figure S5a–d (Supporting Information). Figure 4f shows R values and the absorbance of SnS 2 thin film as a function of the light wavelength.…”

Section: Resultsmentioning

confidence: 65%

“…Although considerable efforts have been devoted, [ 13–18 ] the reports on self‐powered broadband PDs remain limited and several challenges are to be solved. For instance, various photoactive materials and methods are applied to construct PDs, but it is still challenging to design a high performance self‐powered PDs based on earth abundant materials by a facile method.…”

Section: Introductionmentioning

confidence: 99%

Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction

Jiang

Huang

et al. 2020

Adv Materials Inter

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is constructed by utilizing an integrated nanosystem consisting of an energy harvesting or storage unit and a light sensor. The simplified structure and maintenancefree features of the first category endow the low-cost advantage as compared with the second one. Furthermore, the heterojunction-based PDs generally possess superior performance compared with PEC and the integrated nanosystem. [10,11] In addition, the vertical heterojunction configuration is considered as one of the most essential cornerstones of high performance optoelectronic devices, which is attributed to its strong built-in electric field, the short carrier diffusion path, and the large active area. [12] Although considerable efforts have been devoted, [13-18] the reports on selfpowered broadband PDs remain limited and several challenges are to be solved. For instance, various photoactive materials and methods are applied to construct PDs, but it is still challenging to design a high performance self-powered PDs based on earth abundant materials by a facile method. In addition, several conditions need to be met for the photoactive materials: the large absorption coefficient, the superior carrier mobility, the tunable energy-level alignment with electrode for the sake of high-performance PDs. [5] Thus, it is still demanding to find suitable photoactive materials for PDs that can work at room temperature in the range from UV to NIR. Metal chalcogenides semiconductors are promising candidates for photoelectric devices owing to their specific electronic and optoelectronic properties. [19,20] Tin disulfide (SnS 2) is an indirect bandgap (2.2 eV) semiconductor, which has drawn considerable attentions owing to its advantages of low cost, earth abundance, nontoxicity, and environmental friendliness. [21] The absorption coefficient and carrier mobility is up to 10 5-10 6 cm −1 and 230 cm 2 V −1 s −1 , respectively. [5,22] SnS 2based PDs have shown superior performance, such as high on/off ratio, high responsivity, good stability, and fast response speed. [22-25] In addition, it has been proved that SnS 2 can be applied to construct a PD in the range from UV to NIR light, although it need to be powered externally. [26] Zinc oxide (ZnO), a typical n-type wide bandgap semiconductor, has already been widely applied in optoelectronic devices due to its wide bandgap and high exciton biding energy. [27-29] In addition, ZnO-based PDs are endowed the advantages of low applied field, fast response, and no oxygen dependency. [30,31] On the other hand, the doping of S atom can not only improve the optical and electrical properties of ZnO, but also modify the band structure of Self-powered photodetectors that can work without an external power source are expected to play a crucial role in future optoelectronic devices. Herein, SnS 2 /ZnO 1−x S x heterojunctions are fabricated by a facile sputtering method and constructed as self-powered broadband photodetectors covering from UV (365 nm) to NIR (850 nm). The self-powered device shows a superior responsivity of 8.28 mAW...

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“…Photodetectors, probably among the most important optoelectronic devices nowadays, which exhibit the ability to convert light illuminations into electrical signals, have received significant research attention because of their applicability in industrial, medical, environmental, and in many other advanced technological areas . Among the various photodetectors, one type of simple pyroelectric photodetector, which usually consists of a pyroelectric element and two electrodes, has especially attracted huge attention Moreover, the performance of pyroelectric photodetector can be further improved by optimizing the electrode materials . Under the ultraviolet (UV) light exposure, the surface temperature of photodetector rises quickly.…”

mentioning

confidence: 99%

Achieving Light‐Induced Ultrahigh Pyroelectric Charge Density Toward Self‐Powered UV Light Detection

Song

Mishra

et al. 2018

Adv Elect Materials

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the pyroelectric materials are rather more suitable for utilization in such condition by converting the light-induced temporal temperature gradient (dT/dt) into an electrical signal.Among the traditional perovskitebased pyroelectric materials family, the BaTiO 3 (BTO) as a very environmental friendly material, is an ideal candidate for fabricating the pyroelectric photodetectors. [12,20] UV light illumination results in an increase in surface temperature, which causes the oscillations of the electric dipoles, leading to a subsequent decrease in the spontaneous polarization. The quantity of bound charge on the surface of the BTO element is reduced too, leading to the redistribution of the free charges to compensate for the change in bound charge, thus generating a current flow. [7] Such ability of electrical current generation under exposure to environmental conditions, e.g., light, heat, force, etc., can facilitate the fabrication of self-powered photodetectors without the need of any external power source. Moreover, as an energy harvester, its performance is related to the variations in charge density which can be easily tailored by selecting appropriate material combinations or modifications. [21,22] Therefore, significant efforts have been made to increase the amount of charge density by means of surface modification, structural optimization, and material improvement. [23][24][25] Here, we demonstrate a substrate-free self-powered photodetector to detect 365 nm light by using a floating pyroelectric BTO film as the core sensing unit. The removal of supporting substrate and the thinning of the BTO film can result in a floating thin indium tin oxide (ITO)/BTO/silver (Ag) device (0.35 mm) with achievable charge density as high as ≈1787.2 nC cm −2 under 365 nm light (247 mW cm −2 ), which is about 11.4 times larger than that of 0.85 mm thick device on the substrate. The mechanism of this enhancement is associated with the lightinduced heat transfer between device and substrate/air. In comparison with conventional photodetectors, the ferroelectric BTO film materials-based self-powered pyroelectric photodetector demonstrates prospective applications in UV light detections.The schematic diagram of the BTO-based UV photodetector is demonstrated in Figure 1a. The device consists of ITO electrode, middle BTO layer, and bottom Ag electrode. ITO material is chosen as the top electrode, because transparent ITO electrode facilitates the light transmission toward BTO film. Due to the pyroelectric effect, the ITO/BTO/Ag photodetector From the ferroelectric material family, BaTiO 3 (BTO) demonstrates quite excellent pyroelectric features due to its inherent intrinsic spontaneous polarization capability. The pyroelectric effect induced by ultraviolet (UV) illumination can be utilized to realize the self-powered detection of the UV light, where the photosensing characteristics can be determined by the change in charge density with time. Here, a method to increase the charge density by removing the underneath substrate and reduci...

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Self-Powered Ultrabroadband Photodetector Monolithically Integrated on a PMN–PT Ferroelectric Single Crystal

Cited by 46 publications

References 40 publications

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction

Achieving Light‐Induced Ultrahigh Pyroelectric Charge Density Toward Self‐Powered UV Light Detection

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Self-Powered Ultrabroadband Photodetector Monolithically Integrated on a PMN–PT Ferroelectric Single Crystal

Cited by 46 publications

References 40 publications

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

Phonon-enhanced photothermoelectric effect in SrTiO3 ultra-broadband photodetector

Self‐Powered and Broadband Photodetector Based on SnS2/ZnO1−xSx Heterojunction

Achieving Light‐Induced Ultrahigh Pyroelectric Charge Density Toward Self‐Powered UV Light Detection

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Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction