Sub‐50 nm Channel Vertical Field‐Effect Transistors using Conventional Ink‐Jet Printing

Baby, Tessy Theres; Rommel, Manuel; Seggern, Falk von; Friederich, Pascal; Reitz, Christian; Dehm, Simone; Kübel, Christian; Wenzel, Wolfgang; Hahn, Horst; Dasgupta, Subho

doi:10.1002/adma.201603858

Cited by 35 publications

(38 citation statements)

References 33 publications

(48 reference statements)

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“…Current technological interests of organic VFETs are mainly focusing on organic thin film materials . But the inevitable large amount of defects and grain boundaries in organic thin films are inferior to efficient charge transport in devices.…”

mentioning

confidence: 99%

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

et al. 2018

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Organic vertical field‐effect transistors (VFETs) have attracted significant attention over the past years due to their unique characteristics of high output currents, low operation voltages, high working frequency, and promising high‐density integration for circuits. However, most currently reported VFETs demonstrate poor performance, e.g., with low on/off ratio and current density. Here, the first organic‐single‐crystal vertical field‐effect transistors (SC‐VFETs) and phototransistors are constructed from 2,6‐diphenyl anthracene (DPA) through a modified method. The devices exhibit high on/off ratio of 106 and a high current density of 100 mA cm‐2 under a small voltage of −5 V, which are proved to be one of the best performances for organic VFETs. Furthermore, superior photoresponse performance with photoresponsivity of 110 A W‐1 and detectivity of 1013 Jones is obtained under light illumination for vertical phototransistors. These results confirm the control of the intrinsic Schottky barrier height at the graphene–DPA junction along with good interfacial contact effectively suppressing the dark current to realize a large on/off ratio and high light detectivity. This vertical integration of graphene with organic single crystals via simple, effective fabrication processes opens up new opportunities to realize high‐performance integrated organic vertical electronic and optoelectronic devices.

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confidence: 99%

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

et al. 2018

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“…In this regard, vertical organic transistors with a channel length of ≈100 nm have generated significant interest in recent years, [4][5][6][7][8][9][10] as the vertical dimensions of an organic transistor can be easily controlled over the nanometer regime. Hence, new device concepts need to be conceived which allow for an ultra-short channel length in conjunction with low fabrication costs.…”

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confidence: 99%

Electrically Stable Organic Permeable Base Transistors for Display Applications

Dollinger

Iseke

Guo

et al. 2019

Adv Elect Materials

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Unfortunately, high-resolution patterning techniques operating in the nanometer regime are costly and currently incompatible with the promise of low-cost flexible electronics. Hence, new device concepts need to be conceived which allow for an ultra-short channel length in conjunction with low fabrication costs. In this regard, vertical organic transistors with a channel length of ≈100 nm have generated significant interest in recent years, [4][5][6][7][8][9][10] as the vertical dimensions of an organic transistor can be easily controlled over the nanometer regime. The organic permeable base transistor (OPBT) is a truly vertical device with a semiconductor thickness in the order of 100 nm. Due to the extraordinarily short channel and a reduced influence of the contact resistance, [11] the OPBT can drive very large current densities above 1 kA cm −2[12] and reaches record-high transition frequencies of 40 MHz, [3] making it the fastest organic transistor to date. The transistor consists of a vertical stack of three electrodes separated by organic semiconductor layers. The outer electrodes constitute emitter and collector, while the central electrode is the base. It has native nano-sized holes, making it permeable for electrons. Current leakage into the base is prevented by a native oxide film around the electrode. In the on-state, a charge-accumulation channel at the oxide interface is formed, ensuring efficient charge transport through the base, while in the off-state the base potential hinders the charge conduction through the pinholes. Figure 1 shows a cross-sectional transmission electron microscopy (TEM) image of an OPBT with C 60 semiconductor layers and the ultra-thin permeable base electrode of aluminum.These advances enable a broad range of possible applications for OPBTs, including display driver circuits where high currents and fast switching are needed, [13] and radio-frequency identification (RFID) systems with MHz operation. [14,15] Realworld applications, however, require a number of other properties like integrateablity, low power consumption, and stability. OPBTs operate on low voltages, generally enabling facile integration into electronic circuits. The static power consumption of OPBTs was recently dramatically reduced by the introduction of a controlled base oxidation technique. [16] Stability, though, has not yet been studied for OPBTs and there is little research regarding the behavior of short-channel vertical organic transistors under continued electrical stress.Vertical organic permeable base transistors (OPBT) can drive large current densities of kA cm −2 and achieve record-high transition frequencies of up to 40 MHz. They are therefore an interesting candidate for numerous applications, including the use in active-matrix organic light emitting display (AMOLED) backplanes. However, the transistor characteristics are required to be stable against electrical stress. Here, the threshold voltage shifts under current-and voltage-stress conditions over various temperatures and illumination condi...

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“…There are also promising developments with regard to printed electronics and inorganic semiconductor materials. Baby et al successfully built a transistor with a vertical structure and a channel length of less than 50 nm . As ink, they used a metal–organic precursor which they printed on a prepatterned bottom electrode.…”

Section: Overview Over Device Principles and State‐of‐the‐artmentioning

confidence: 99%

Section: Overview Over Device Principles and State‐of‐the‐artmentioning

confidence: 99%

A Review of Vertical Organic Transistors

Kleemann

Krechan

Fischer

et al. 2020

Adv Funct Materials

119

110

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Powerful electronic devices require performant short‐channel transistors. For organic electronics, though, promising low‐cost and flexible electronic circuits, high processing costs for short channel devices are not acceptable. In this regard, vertical organic transistors (VOTs) are an attractive alternative, and in fact, today they reach the highest transition frequency (40 MHz) and the highest footprint current density (>1 MA cm−2) among all organic transistors. Here, all VOT concepts are reviewed, while discussing device physics, integration approaches, and highlighting the recent developments. The upcoming challenges for the VOT technology are also presented with a guideline for further developments.

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Sub‐50 nm Channel Vertical Field‐Effect Transistors using Conventional Ink‐Jet Printing

Cited by 35 publications

References 33 publications

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

Electrically Stable Organic Permeable Base Transistors for Display Applications

A Review of Vertical Organic Transistors

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