276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

Hwang, Seongmo; Morgan, D. V.; Kesler, Amanda; Lachab, M.; Zhang, Bin; Heidari, Ahmad; Nazir, Haseeb; Ahmad, Iftikhar; Dion, Joe; Fareed, Q.; Adivarahan, V.; Islam, Monirul; Khan, Asif

doi:10.1143/apex.4.032102

Cited by 51 publications

(34 citation statements)

References 23 publications

(25 reference statements)

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“…Reported external quantum efficiencies (EQE) for group III-nitrides-based near and deep UV LEDs. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] In part courtesy of Prof. M. Kneissl of Technische Universität Berlin.…”

Section: Current Status and Challenges Of Group Iii-nitrde Duv Ledsmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Section: Current Status and Challenges Of Group Iii-nitrde Duv Ledsmentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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show abstract

“…24 The US companies, SET, Crystal IS and Nitek, developed high EQE (2-4%) DUV-LEDs with wavelengths of 260-280 nm during the period between 2009 and 2011. [23][24][25][26] Also, the Japanese companies, UV Craftory and Nichia, demonstrated EQEs of about 5% and 3% for DUV-LEDs in 2010. 27,28 The shortest wavelength achieved for a DUV-LD is 336 nm, 29 which was achieved by Hamamatsu Photonics.…”

Section: Research Background Of Deep Ultraviolet (Duv) Ledsmentioning

confidence: 99%

Ultraviolet LEDs

Hasegawa

2014

Nitride Semiconductor Light-Emitting Diodes (LEDs)

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“…In addition, deep UV LEDs also show many other potential applications such as UV sensing, air and water purification [8], curing [9], medical treatment, biochemical detection, and optical data storage [10]. However, although it really seems that there are tremendous opportunities for AlGaN-based deep UV LEDs, some challenging issues in technology still remain for AlGaN-based deep UV LEDs, especially the relatively low internal quantum efficiency (IQE) and emission power [11], [12]. Many causes have been proposed as being responsible for the relatively low IQE and emission power, such as the high dislocation density in AlGaN materials [13], [14], the spontaneous and piezoelectric polarizations [15], carrier delocalization [16], and Auger recombination [17], [18].…”

Section: Introductionmentioning

confidence: 99%

Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier

et al. 2015

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In order to improve the performance of AlGaN-based deep ultraviolet lightemitting diodes (UV LEDs), the optical and physical properties of AlGaN-based deep UV LEDs with a p-type and thickened last quantum barrier (LQB) are studied numerically. The output power-current performance curves, internal quantum efficiency, electroluminescence intensity, energy band diagrams, distributions of carrier concentrations, and the radiative recombination rates in the active region are investigated by Advance Physical Model of Semiconductor Devices (APSYS) software. The results reveal that, compared with the conventional one, the AlGaN-based deep UV LED with a p-type and thickened LQB achieves a remarkable improvement in performance, which is mainly attributed to the enhancement of hole injection and electron confinement.

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276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

Cited by 51 publications

References 23 publications

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ultraviolet LEDs

Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier

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