Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

Shen, Youde; Chen, Renjie; Yu, Xin; Wang, Qijie; Jungjohann, Katherine L.; Dayeh, Shadi A.; Wu, Tom

doi:10.1021/acs.nanolett.6b01037

Cited by 27 publications

(20 citation statements)

References 60 publications

(90 reference statements)

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“…62 Hopefully the growing empirical database along with other, more recent, reports including those exploring the Gibbs-Thomson effect in horizontal nanowires 63 and the VLS etching of surfaces by running gold nanodroplets 64 will accumulate to a comprehensive understanding of this phenomenon. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60…”

mentioning

confidence: 99%

Surface-Guided Core–Shell ZnSe@ZnTe Nanowires as Radial p–n Heterojunctions with Photovoltaic Behavior

Oksenberg¹,

Martí‐Sánchez

Popovitz‐Biro³

et al. 2017

ACS Nano

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The organization of nanowires on surfaces remains a major obstacle toward their large-scale integration into functional devices. Surface−material interactions have been used, with different materials and substrates, to guide horizontal nanowires during their growth into well-organized assemblies, but the only guided nanowire heterostructures reported so far are axial and not radial. Here, we demonstrate the guided growth of horizontal core−shell nanowires, specifically of ZnSe@ZnTe, with control over their crystal phase and crystallographic orientations. We exploit the directional control of the guided growth for the parallel production of multiple radial p−n heterojunctions and probe their optoelectronic properties. The devices exhibit a rectifying behavior with photovoltaic characteristics upon illumination. Guided nanowire heterostructures enable the bottom-up assembly of complex semiconductor structures with controlled electronic and optoelectronic properties.

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mentioning

confidence: 99%

Surface-Guided Core–Shell ZnSe@ZnTe Nanowires as Radial p–n Heterojunctions with Photovoltaic Behavior

Oksenberg¹,

Martí‐Sánchez

Popovitz‐Biro³

et al. 2017

ACS Nano

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“…In a later work, Oksenberg et al surveyed the growth of PVK wires on both C‐plane and annealed M‐plane sapphire substrates, and they found sixfold and twofold symmetric wire growth, respectively . Such PVK wires are hopeful to be integrated with other lateral oxide and semiconductor nanowires in bottom‐up‐fabricated devices …”

Section: Synthesis Of Pvk Platelets and Wiresmentioning

confidence: 99%

Morphology‐Tailored Halide Perovskite Platelets and Wires: From Synthesis, Properties to Optoelectronic Devices

Liu

Guan

et al. 2018

Advanced Optical Materials

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The recent emergence of metal-halide perovskites as light absorbers in solar cells has attracted lots of attention on their synthesis and properties. In particular, low-dimensional metal-halide perovskites like platelets and wires are expected to regulate their optical and electrical properties in reference to bulk counterparts as a result of quantum confinement and anisotropy. In this review, first, the recent solution-and vapor-based approaches on synthesizing metal-halide perovskite platelets and wires are highlighted. Then, their optical and electrical properties along with application in photonics and optoelectronics such as lasers, light emitting diodes, photodetectors, and phototransistors are discussed. At last, the importance of such perovskite platelets and wires on improving material stability and transport properties is emphasized, and potential integration of perovskites with other lowdimensional materials in multifunctional systems is proposed.

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“…Despite in-depth research of different surface-guided semiconductor NWs over the last decade [36][37][38][39][40][41][42][43][44], the kinetics and mechanism of catalyst-assisted planar NW growth were studied comprehensively only recently and revealed the effect of dimensionality on the diffusion transport of the semiconductor materials into the droplet [45][46][47]. In particular, the model of Rothman et al [47] fitted well the data on planar growth of ZnSe and ZnS NWs.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

et al. 2021

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The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes—either the Gibbs–Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

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Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

Cited by 27 publications

References 60 publications

Surface-Guided Core–Shell ZnSe@ZnTe Nanowires as Radial p–n Heterojunctions with Photovoltaic Behavior

Surface-Guided Core–Shell ZnSe@ZnTe Nanowires as Radial p–n Heterojunctions with Photovoltaic Behavior

Morphology‐Tailored Halide Perovskite Platelets and Wires: From Synthesis, Properties to Optoelectronic Devices

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

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