Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study

Wang, Haowei; Wang, Yishan; He, Bin; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Shen, Yang; Tang, Yi; Zou, B. S.

doi:10.1021/acsami.6b03198

Cited by 67 publications

(48 citation statements)

References 39 publications

(43 reference statements)

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“…The direct plot of dJ/dV against V in Figure d extracted G value from a flat region under reverse bias . For single (CdS/Alloy) and double ETL based device, G is 6.4 and 2.6 mS cm −2 , respectively.…”

Section: Resultsmentioning

confidence: 99%

Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation

et al. 2018

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Sb2(SexS1–x)3 has been proven a very promising light absorbing material for photovoltaic applications due to its high stability, tunable band gap, non‐toxic element, and high extinction coefficient. For Sb2(SexS1–x)3 alloy film deposition, the authors develop a single source based rapid‐thermal‐evaporation (RTE) method instead of the traditional in‐situ sulfurization or double source co‐evaporation based RTE method. The absorber band gap can be precisely tuned from 1.1 to 1.7 eV by simply varying the molar ratio of Sb2Se3 and Sb2S3 source powder. From the systematical composition screening, FTO/CdS/Sb2(Se0.68S0.32)3/Au devices show higher power conversion efficiency (PCE ∼ 4.17%) when compared with other absorber compositions based devices. In order to achieve thinner ETL layers and simultaneously avoid pinholes led by rough FTO surface, we introduce for the first time double buffer layer in the Sb2(Se0.68S0.32)3 device system which could further improve the device efficiency from 4.17% to 5.73%. The double buffer layer ZnO/CdS helped to form graded energy band alignment, suppress charge recombination and efficiently extract electrons. The devices obtained higher Jsc and Voc supported by various physical characterization analyses. The facile single source deposition method, efficient double buffer layer device structure and notable PCE are expected to pronouncedly promote antimony chalcogenide device development.

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Section: Resultsmentioning

confidence: 99%

Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation

et al. 2018

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“…IS has been also used to examine the recombination resistance, capacitance, carrier lifetime, and conductivity of two typical PbS CQD solar cells Au/PbS‐tetrabutylammonium iodide (TBAl)/ZnO/ITO and Au/PbS‐1,2‐ethanedithiol (EDT)/PbS‐TBAl/ZnO/ITO . The intersection point of IS curve with X‐axis, in the low frequency region, is the recombination resistance.…”

Section: Is Characteristics For Photovoltaic Devicesmentioning

confidence: 99%

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices

Ali

Chang

Imran

et al. 2019

Physica Rapid Research Ltrs

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Solution‐processed optoelectronic devices based on conjugated polymers, colloidal quantum dots (CQDs), halide perovskites, and so on are now emerging as a new‐generation semiconductor technology which prevails its conventional counterparts in terms of low fabrication cost, ease of scalable manufacturing, and abundant material designability. However, the solution‐processed thin films obtained through spin‐coating, spray, inkjet printing, and doctor blading usually suffer from low film quality and a high defect density especially at the interfaces of different functional layers. Currently, the most significant subject is to address the non‐ideal interfaces for achieving improved performance of the devices. Impedance spectroscopy (IS) is a universal technique that can help to examine the charge behavior at the interfaces in an electrochemical or solid‐state multilayered device. Owing to its ability to elucidate the charge transfer, charge transport, and accumulation within the interfaces of electrochemical or multilayered devices with minimal effects to the devices themselves, the use of IS has increased vividly in the last decades. This review provides the basic principles of IS and its applications on solution‐processed optoelectronic devices.

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“…The reduced areal density of the ZnO nanowires grown at lower concentration could potentially facilitate their infiltration with PbS QDs. In order to gain more information about carrier recombination inside the device structure, we employed electrochemical impedance spectroscopy (EIS) [52,53] (for the discussion and data see Figure S5 in the Supporting Information), which confirms the reduction of exciton recombination for the devices with lower areal density of ZnO nanowires.…”

Section: Resultsmentioning

confidence: 99%

Tuning Areal Density and Surface Passivation of ZnO Nanowire Array Enable Efficient PbS QDs Solar Cells with Enhanced Current Density

Dastjerdi

Prochowicz

Yadav

et al. 2019

Adv Materials Inter

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Colloidal PbS quantum dots (QDs) have provoked a revolution in the field of optoelectronic devices owing to their low-cost fabrication processing and excellent physical properties. Recently, the fabrication of nanostructured PbS QDs photovoltaic (PV) devices based on zinc oxide (ZnO) nanowires array appeared as an effective strategy for improving the overall device performance. On This article is protected by copyright. All rights reserved. 2 the other hand, the infiltration of PbS QDs in a densely packed ZnO nanowire array not only impedes the efficient charge extraction but also increases the surface trap states and charge carrier recombination leading to degraded PV performance. Despite its potentially strong impact on the device performance, the role of nanowire areal density on photon absorption and exciton dynamicshas not yet been studied and still remains unexplored. Here, for the first time, we tune the areal density of ZnO nanowires through controlling the precursor concentration and study its impact on PbS QDs PV performance. It is found that the device with optimized ZnO nanowire areal density yields significantly increased power conversion efficiency (PCE) (10.1% vs. 8.5% of control nanowirebased device) due to improved light scattering and reduced surface recombination states. To further improve the photovoltaic performance, we treated the ZnO nanowire surface with hydrogen plasma, which has not been studied before in QDs PVs. Transient photovoltage (TPV) measurement reveal that this passivation process noticeably reduces the nonradiative charge recombination yielding a champion device with a remarkable PCE of 10.8%.

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Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study

Cited by 67 publications

References 39 publications

Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation

Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices

Tuning Areal Density and Surface Passivation of ZnO Nanowire Array Enable Efficient PbS QDs Solar Cells with Enhanced Current Density

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Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study

Cited by 67 publications

References 39 publications

Efficient Double Buffer Layer Sb2 (SexS1–x)3 Thin Film Solar Cell Via Single Source Evaporation

Efficient Double Buffer Layer Sb2 (SexS1–x)3 Thin Film Solar Cell Via Single Source Evaporation

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices

Tuning Areal Density and Surface Passivation of ZnO Nanowire Array Enable Efficient PbS QDs Solar Cells with Enhanced Current Density

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Product

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Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation

Efficient Double Buffer Layer Sb₂ (Se_xS_1–x)₃ Thin Film Solar Cell Via Single Source Evaporation