27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination

Kayes, Brendan M.; Nie, Hui; Twist, Rose; Spruytte, S.G.; Reinhardt, F.; Kizilyalli, I.C.; Higashi, G. S.

doi:10.1109/pvsc.2011.6185831

Cited by 384 publications

(268 citation statements)

References 10 publications

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“…The surface recombination rate at the top and the bottom contacts is set to zero. The short-circuit current density is J sc = 31.9 mA/cm 2 , the open-circuit voltage is V oc = 1.05 V, F F = 0.85, and the efficiency is η = 28.58%, comparable to that in [5]. Figure 6(b) shows the external quantum efficiency (EQE) of this solar cell, defined as EQE = J sc eφ io (28) Figure 5.…”

Section: Simulation Results and Discussionmentioning

confidence: 98%

“…The bandgap of GaAs is 1.42 eV, corresponding to a cutoff wavelength of 873 nm. A single-junction GaAs solar cell, produced by Alta Devices, is measured to achieve an efficiency of η = 28.8%, under the AM1.5 spectrum at 298 K [5]. Figure 6(a) shows the simulated J-V curve of a single-junction GaAs p-n solar cell.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…Both light hole and heavy hole states exist in InAs. Compared with the heavy hole, a light hole has a lower m * h , leading to a wider bandgap shift based on (5). β e and β h are derived from the dispersion relation in (1), where…”

Section: Energy Level Of Spherical Quantum Dotsmentioning

confidence: 99%

“…Their efficiency is constrained by the Shockley-Queisser limit [2], due to blackbody radiation [3], spectral loss, excessive energy of the absorbed photons, and recombination loss [4]. Up to August 2013, the highest efficiency achieved by a single-layer solar cell, made of GaAs, is 28.8% [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Efficiency Improvement of P-I-N Solar Cell by Embedding Quantum Dots

Lin¹,

Kiang²

2014

PIER

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Abstract-A model of solar cell embedding quantum dots in the intrinsic layer of a p-i-n solar cell has been presented. With proper selection of material, size and fractional volume, quantum dots can provide an intermediate band between the valence and conduction bands of the matrix material, which will absorb photons with energy lower than the original bandgap to absorb more incident photons in the otherwise unused spectral irradiance. The design approach to acquire the highest efficiency of the conventional p-i-n solar cell is presented as a benchmark. Quantum dots are then embedded in the intrinsic region of the reference solar cell to improve its efficiency. InAs is chosen to implement the quantum dots, to be embedded in the p-i-n solar cell made of GaAs. With a more packed arrangement of QD's from that in the literatures, the simulation results shows that the efficiency of the conventional GaAs p-i-n solar cell can be increased by 1.05%.

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Section: Simulation Results and Discussionmentioning

confidence: 98%

Section: Simulation Results and Discussionmentioning

confidence: 99%

Section: Energy Level Of Spherical Quantum Dotsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Efficiency Improvement of P-I-N Solar Cell by Embedding Quantum Dots

Lin¹,

Kiang²

2014

PIER

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“…GaAs with near 30% efficiency compared to the thermodynamic limit of B31%). 74,102,103 Architectures and semiconductor-liquid vs. solid state junctions Subject to the constraints discussed above regarding direct comparison of STH efficiency values, it is nevertheless interesting to compare the approaches used to achieve relatively high STH conversion efficiencies. There are 8 reports of 410% efficiency depicted in Fig.…”

Section: Solar-to-hydrogen Conversion Efficiencymentioning

confidence: 99%