27.3: The 300ppi Mobile Display using CG Silicon Technology

Matsuo, Takami; Moriwaki, H.; Mihotani, T.; Kitakado, Hidehito; Ohue, Michio; Maeda, Kengo; Sakai, Tadashi; Satoh, Mitsuru; Tsuda, Yusuke; Komiya, H.; Muramatsu, Tetsuroh; Katayama, M.

doi:10.1889/1.1821419

Cited by 5 publications

(2 citation statements)

References 1 publication

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“…It has been reported that GLA enables formation of large-grain poly-Si films, leading to the fabrication of TFTs with high field-effect mobility, compared with conventional ELA. [10][11][12] In addition, the running cost can be greatly decreased in GLA because a green laser is a solid-state laser, which is generated by second-harmonic generation (SHG) of neodymium-doped yttrium aluminum garnet (Nd:YAG) laser. In the case of a-Si deposited by a plasma-enhanced chemical vapor deposition (PE-CVD) method, the penetration length of the green laser ( ¼ 532 nm) for a-Si is $100 nm, 13) which is larger than the standard thickness of precursor Si films ($50 nm).…”

Section: Introductionmentioning

confidence: 99%

Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing

Yamaguchi

Machida

Horita

et al. 2012

Jpn. J. Appl. Phys.

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We tried to realize thin-film devices as an application of double-layered polycrystalline silicon (poly-Si) films formed by green laser annealing (GLA). We investigated the dependence of the quality of double-layered poly-Si films formed by GLA on laser irradiation energy. Simultaneous crystallization of double-layered Si films was achieved. The grain size of the upper poly-Si layer and the crystalline quality of the lower poly-Si layer are improved by optimization of laser energy density. Moreover, the thin-film transistors (TFTs) and thin-film photodiodes (TFPDs) fabricated on the upper and lower poly-Si films in a single process have shown clear device operations. The optimization of laser energy density in GLA improves the quality of the upper and lower poly-Si films leading to the enhancement of the performance of TFTs and TFPDs.

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Section: Introductionmentioning

confidence: 99%

Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing

Yamaguchi

Machida

Horita

et al. 2012

Jpn. J. Appl. Phys.

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“…The delivered media are data, voice, and images. Visual image quality is mostly dependent upon optical-performance factors such as luminance, 1 resolution, 2,3 and color saturation. 4 The other critical factors include readability in bright sunlight and dusky midnight conditions, low power consumption in any occasion, low product cost, and thinner LCD modules.…”

Section: Introductionmentioning

confidence: 99%

Improved image quality of a high‐transflective tRGB‐t/rW TFT‐LCD

Lin

Liang

2008

J Soc Info Display

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Abstract— This work combines a very simple resolution rescaling method, a well‐known RGB‐to‐YUV converting technique and a detection strategy into an optimized switchable mechanism in order to eliminate the problems of obvious zigzag profiles caused by the special layouts of transflective tRGB‐t/rW TFT‐LCDs and the poor reflective gray‐level contrast ratio effected by the minimum white data in the transmissive RGB‐W + subpixel rendering algorithms. Finally, a transflective tRGB‐t/rW TFT‐LCD is revealed not only to have no visible zigzag profiles and high visibility of reflective gray‐level contrast ratio, but also to have extreme reflectance and transmittance. The excellent optical performance of the proposed system makes it particularly suitable for single‐panel applications that need both high‐transmissive main displays and high‐reflective subdisplays.

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38.2: 302-ppi High-Resolution AMOLED using Laser-Induced Thermal Imaging

Yoo

Lee

et al. 2005

SID Symposium Digest

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Samsung SDI has developed 2.6-inch full color VGA Active Matrix Organic Light-Emitting Diode (AMOLED) display with the world's highest resolution of 302ppi using Laser Induced Thermal Imaging (LITI) method with the top emission structure. A voltage compensating pixel circuit with 2µm design-rule in lowtemperature poly-Si (LTPS) thin film transistors (TFTs) was introduced to compensate the variation of the threshold voltage (Vth) in order to improve the image quality. Moreover, an aperture ratio of ~40% was obtained for each pixel even though the sub-pixel pitch was 28um. The luminance for the white color was 200cd/㎡ and color gamut was 74% compared to national television standard committee (NTSC) standards. These results show the possibility of high-resolution AMOLED display incorporating the LTPS technology and LITI method for digital mobile era applications in the near future.

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27.3: The 300ppi Mobile Display using CG Silicon Technology

Cited by 5 publications

References 1 publication

Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing

Thin-Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing

Improved image quality of a high‐transflective tRGB‐t/rW TFT‐LCD

38.2: 302-ppi High-Resolution AMOLED using Laser-Induced Thermal Imaging

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