Photothermoelectric Effects in Nanoporous Silicon

Lai, Yung‐Cheng; Tsai, C.-Y.; Chang, Chin-Kai; Huang, Cheng-Yin; Hsiao, Vincent K. S.; Su, Yuhlong Oliver

doi:10.1002/adma.201504990

Cited by 35 publications

(40 citation statements)

References 23 publications

(20 reference statements)

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“…Hence, the conductivity can be optically tuned with a high gain. In the case of the photothermoelectric effect, it is a hot carrier associated transport process and produce photovoltage via Seebeck effect . When the channel of the device is radiated by a small laser spot, there is a temperature contrast Δ T .…”

Section: Device Structures and Physical Mechanism For Photodetectionmentioning

confidence: 99%

“…In the case of the photothermoelectric effect, it is a hot carrier associated transport process and produce photovoltage via Seebeck effect. [70][71][72][73] When the channel of the device is radiated by a small laser spot, there is a temperature contrast ΔT. The photovoltage induced by the Seebeck effect is V PTE = (S 1 − S 2 ) ΔT, where S 1 and S 2 are Seebeck coefficients of different regions with different thermalvoltaic response (eg, different doping level).…”

Section: Device Structures and Physical Mechanism For Photodetectionmentioning

confidence: 99%

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Two‐dimensional heterostructure promoted infrared photodetection devices

Rao

Wang

et al. 2019

InfoMat

115

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It is a rapidly developed subject in expanding the fundamental properties and application of two‐dimensional (2D) materials. The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures (2DHs) based broadband photodetectors in the far‐infrared (IR) and middle‐IR regions with high response and high detectivity. This review focuses on the strategy and motivation of designing 2DHs based high‐performance IR photodetectors, which provides a wide view of this field and new expectation for advanced photodetectors. First, the photocarriers' generation mechanism and frequently employed device structures are presented. Then, the 2DHs are divided into semimetal/semiconductor 2DHs, semiconductor/semiconductor 2DHs, and multidimensional semi‐2DHs; the advantages, motivation, mechanism, recent progress, and outlook are discussed. Finally, the challenges for next‐generation photodetectors are described for this rapidly developing field.

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Section: Device Structures and Physical Mechanism For Photodetectionmentioning

confidence: 99%

Section: Device Structures and Physical Mechanism For Photodetectionmentioning

confidence: 99%

Two‐dimensional heterostructure promoted infrared photodetection devices

Rao

Wang

et al. 2019

InfoMat

115

View full text Add to dashboard Cite

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“…In the above studies, the photodetectors were operated without external bias, where the hot electron was identified to be the dominant photoresponse mechanism. However, based on previous reports, other mechanisms can contribute, and in some cases even dominate the response in electrically biased interband photodetectors . Among them, the photothermoelectric (PTE) and bolometric effects are more relevant in plasmonic device systems with both of these two mechanisms thermally driven.…”

Section: Distinguishing the Photoelectric And Photothermal Response Imentioning

confidence: 99%

“…Besides the photoelectric hot electron emission process, the interband absorption in materials is also unavoidably accompanied by a photothermal process, which can be manifested as the photovoltaic or photoconductive response for optoelectronic devices operating in the NIR or even IR spectral range . However, the photothermal response has rarely been discussed synchronously or discerned from the photoelectric effect in recent reported hot electron M‐S photodetectors that show a obvious response enhancement through external biasing .…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photoelectric and Photothermal Responses on Silicon Platform by Plasmonic Absorber and Omni‐Schottky Junction

Wen

Chen

Liu

et al. 2017

Laser & Photonics Reviews

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Recent progresses in plasmon-induced hot electrons open up the possibility to achieve photon harvesting effiiencies beyond the fundamental limit imposed by band-to-band transitions in semiconductors. To obtain high efficiency, both the optical absorption and electron emission/collection are crucial factors that need to be addressed in the design of hot electron devices. Here, we demonstrate a photoresponse as high as 3.3mA/W at 1500nm on a silicon platform using a plasmonic absorber (PA) and an omni-Schottky junction integrated photodetector, reverse biased at 5V and illuminated with 10mW. The PA fabricated on silicon consists of a monolayer of random Au nanoparticles (NPs), a wide-band gap semiconductor (TiO2) and an optically thick Au electrode, resulting in broadband near-infrared (NIR) absorption and efficient hot-electron transfer via an all-around Schottky emission path. Time and spectral photoresponse measurements reveal that when the embedded NPs absorb the indicent radiation they act as local heating sources and transfer their energy to electricity via the photothermal mechanism, which until now has not been adequately assessed or rigorously differentiated from the photoelectric process in plasmon-mediated photon harvesting nano-systems

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“…Recently, there are efforts in exploring III–Nitrides for THz photodetectors considering their large optical phonon energy (corresponds to the frequency of ≈22 THz) that is transparent to THz photons . However, the direct phonon absorption may also contribute infrared photodetection by the photo‐thermoelectric effects, though the signals tend to be less significant compared to the photoelectric signals at the long wavelengths . Other absorption mechanisms, such as surface plasmon resonance (SPR) induced absorption, have been also explored for infrared photodetection .…”

Section: Principles and Materials For Infrared Photodetectionmentioning

confidence: 99%

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

Zhuge

Zheng

Luo

et al. 2017

Adv Materials Technologies

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Infrared photodetectors are finding widespread applications in telecommunication, motion detection, chemical sensing, thermal imaging and bio‐medical imaging, etc. The nanostructured materials and architectures are attracting extensive interests in photodetectors in view of the potential benefits from confined light‐matter interaction, fast carrier dynamics and ultrahigh photoconductive gains. This review concentrates on the photodetection in the infrared spectrum and recent progresses in constructing advanced infrared photodetectors based on quantum wells, dots, and the rapidly evolving 1D and 2D materials are summarized. The recent achievements in exploring nanostructured plasmonic metamaterials for the intriguing subwavelength photon confinement and waveguides in devices are also surveyed considering their importance in device integration. An outlook of infrared photodetection is given in the end as a guideline for this vigorous field.

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Photothermoelectric Effects in Nanoporous Silicon

Abstract: The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light-induced local heating from illumination at the Au-electrode/NPSi interface.

Cited by 35 publications

References 23 publications

Two‐dimensional heterostructure promoted infrared photodetection devices

Two‐dimensional heterostructure promoted infrared photodetection devices

Enhanced Photoelectric and Photothermal Responses on Silicon Platform by Plasmonic Absorber and Omni‐Schottky Junction

Nanostructured Materials and Architectures for Advanced Infrared Photodetection

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