25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator

Waldow, Michael; Plötzing, Tobias; Gottheil, Martin; Först, Michael; Bolten, Jens; Wahlbrink, T.; Kurz, H.

doi:10.1364/oe.16.007693

Cited by 107 publications

(67 citation statements)

References 20 publications

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“…At higher data rates, self-phase modulation is compromized 28 and compression cannot occur. To circumvent this problem, methods such as ion implantation 31 or reverse biased P-I-N junctions 32 may be used to greatly reduce free-carrier lifetimes to below 20 ps and in so forth, eliminate free-carrier accumulation at higher data rates. Furthermore, these methods can reduce FCA limitations on nonlinear phase acquisition at higher peak powers.…”

Section: Discussionmentioning

confidence: 99%

Monolithic nonlinear pulse compressor on a silicon chip

2010

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Projected demands in information bandwidth have resulted in a paradigm shift from electrical to optical interconnects. Switches, modulators and wavelength converters have all been demonstrated on complementary metal-oxide semiconductor compatible platforms, and are important for all optical signal and information processing. Similarly, pulse compression is crucial for creating short pulses necessary for key applications in high-capacity communications, imaging and spectroscopy. In this study, we report the first demonstration of a chip-scale, nanophotonic pulse compressor on silicon, operating by nonlinear spectral broadening from self-phase modulation in a nanowire waveguide, followed by temporal compression with an integrated dispersive element. Using a low input peak power of 10 W, we achieve compression factors as high as 7 for 7 ps pulses. This compact and efficient device will enable ultrashort pulse sources to be integrated with systems level photonic circuits necessary for future optoelectronic networks.

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Section: Discussionmentioning

confidence: 99%

Monolithic nonlinear pulse compressor on a silicon chip

2010

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“…All-optical switching has been demonstrated using many different platforms and materials such as silicon waveguides [2] and micro rings [3], PhC cavities [4,5] and Mach-Zender interferometers [6], semiconductor optical amplifiers [7], and parametric processes in fibers [8]. In many cases, these demonstrations only consider switching of a single pulse.…”

Section: Introductionmentioning

confidence: 99%

Energy-bandwidth trade-off in all-optical photonic crystal microcavity switches

Heuck¹,

Kristensen²,

Mørk³

2011

Opt. Express

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Abstract:The performance of all-optical switches is a compromise between the achievable bandwidth of the switched signal and the energy requirement of the switching operation. In this work we consider a system consisting of a photonic crystal cavity coupled to two input and two output waveguides. As a specific example of a switching application, we investigate the demultiplexing of an optical time division multiplexed signal. To quantify the energy-bandwidth trade-off, we introduce a figure of merit for the detection of the demultiplexed signal. In such investigations it is crucial to consider patterning effects, which occur on time scales that are longer than the bit period. Our analysis is based on a coupled mode theory, which allows for an extensive investigation of the influence of the system parameters on the switching dynamics. The analysis is shown to provide new insights into the ultrafast dynamics of the switching operation, and the results show optimum parameter ranges that may serve as design guidelines in device fabrication.

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“…This approach is similar to the one used by Waldow et. al, to investigate argon and oxygen implantation on switching speeds in silicon microring resonators [10]. The penetration depth with a wavelength of 800nm in silicon is much larger than the waveguide height in this experiment [11]; hence a distribution of carriers will exist throughout the waveguide which will behave in the same manner as those generated by the co-linear approach [12].…”

Section: Experimental Methods and Resultsmentioning

confidence: 99%

Free carrier lifetime modification for silicon waveguide based devices

Wright

Thomson

Litvinenko

et al. 2008

2008 5th IEEE International Conference on Group IV Photonics

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Abstract:We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers.

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25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator

Cited by 107 publications

References 20 publications

Monolithic nonlinear pulse compressor on a silicon chip

Monolithic nonlinear pulse compressor on a silicon chip

Energy-bandwidth trade-off in all-optical photonic crystal microcavity switches

Free carrier lifetime modification for silicon waveguide based devices

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