250 °C-Operated sandwich-structured all-SiC power module

Kato, Fumiki; Simanjorang, Rejeki; Lang, Fengqun; Nakagawa, Hiroshi; Yamaguchi, Hiroshi; Sato, Hiroshi

doi:10.7567/jjap.54.04dp06

Cited by 14 publications

(3 citation statements)

References 28 publications

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“…Silicon carbide (SiC) is attracting considerable attention for usage in future power devices because they can be operated at a higher current density and at higher switching speeds than those of the conventional silicon (Si) power devices (1). A power module packaging technology for the SiC power devices should achieve both low thermal resistance and low inductance so that the potential of the device can be exhibited (2)(3)(4)(5). Generally, a high speed with high-current switching causes a drastic surge in noise due to the parasitic inductance of the module.…”

Section: Introductionmentioning

confidence: 99%

Thermal Resistance Evaluation of a Low-Inductance Double-Stacked SiN-AMC Substrate for a High-Temperature Operation SiC Power Module

Kato¹,

Sato²,

Tanisawa

et al. 2018

ECS Trans.

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d NISSAN MOTOR CO., LTD., Japan Two silicon nitride active metal brazed copper (SiN-AMC) substrates are double stacked and bonded to generate a five-layer structure that reduces the parasitic inductance of a power module. To investigate the heat dissipation characteristics of the doublestacked SiN-AMC substrates, the thermal resistance is measured using transient thermal analysis. The thermal resistance of each test vehicle is analyzed, and the thermal resistance of the SiN-AMC substrate is extracted. Further, the thermal resistance of the doublestacked SiN-AMC with a 0.3-mm thick Cu film is observed to be lower than the thermal resistance of a single SiN-AMC with a 0.1mm thick Cu film. For a 3-mm square SiC die size, we observe that increasing the Cu film thickness is more effective to reduce the thermal resistance of the double-stacked SiN-AMC module as compared to increasing the SiN thermal conductivity.

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Section: Introductionmentioning

confidence: 99%

Thermal Resistance Evaluation of a Low-Inductance Double-Stacked SiN-AMC Substrate for a High-Temperature Operation SiC Power Module

Kato¹,

Sato²,

Tanisawa

et al. 2018

ECS Trans.

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“…Many studies have successfully carried out the characterization of MOSFET devices [3], [4], [6], [7], although some were limited in current [3], [6], [7]. The studies based the performance analysis on the electrical behavior and the functioning under high temperature.…”

Section: Introductionmentioning

confidence: 99%

High Performance SiC MOSFETs for Fault Tolerant Applications

Onambele¹,

Mpanda²,

Giacchetti³

2017

REPQJ

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Harsh environment applications are characterized by exceptional constraints regarding temperature, volume, faulttolerance, efficiency, etc. As the introduction of power electronics in such systems is constantly growing, research activities are essential to get more knowledge on the capabilities of available technologies for such applications: aerospace and renewable energies. This paper evaluates the performance of a Silicon Carbide (SiC) MOSFET transistor for a multiphase power converter for fault-tolerant applications. Two methods are carried out in this study: first, the model provided by the manufacturer is used in simulation for a fault-tolerant electric drive application, then in the same operating conditions, the power module is characterized and its performance evaluated. Both methods lead to high system efficiency around 97-98% for a 1200V-400A SiC MOSFET transistor module integrated in a 120kW-100A 6-phase modular inverter.

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“…Silicon carbide (SiC) power devices are attracting attention as a candidate for future power devices, since they can be operated at higher power densities and at higher temperatures than conventional silicon (Si) power devices [1][2][3]. Significant heat generation occurs in the power device die of high performance power modules when they are operated at high power densities.…”

Section: Introductionmentioning

confidence: 99%

High-Temperature Transient Thermal Analysis for SiC Power Modules

Kato

Nakagawa

Yamaguchi

et al. 2016

MSF

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Transient thermal analysis is a very useful tool for thermal evaluation to realize the stable operation of SiC power modules which are operated at higher temperatures than conventional Si power modules. A transient thermal analysis system to investigate the thermal characteristics of SiC power modules at high temperature is presented. We have found that precise temperature measurement at the initial stage of the junction temperature decay curve is necessary in order to evaluate the thermal resistance and heat capacity of the die attach, since the thermal diffusivity of SiC is larger than that of Si and the temperature distribution of SiC die was considered. Using the proposed transient thermal analysis method, the thermal resistance and heat capacity of the AuGe die attach under the SiC-SBD was successfully evaluated at temperatures up to 250 °C.

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250 °C-Operated sandwich-structured all-SiC power module

Cited by 14 publications

References 28 publications

Thermal Resistance Evaluation of a Low-Inductance Double-Stacked SiN-AMC Substrate for a High-Temperature Operation SiC Power Module

Thermal Resistance Evaluation of a Low-Inductance Double-Stacked SiN-AMC Substrate for a High-Temperature Operation SiC Power Module

High Performance SiC MOSFETs for Fault Tolerant Applications

High-Temperature Transient Thermal Analysis for SiC Power Modules

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