25-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor in 45-nm SOI CMOS

Sugiura, T.; Yoshimasu, Toshihiko

doi:10.1109/pawr53092.2022.9719847

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Table 1 compares this work to recently reported PA ICs [27], [28], [31]- [33]. The ITRS FoM is included to compare the overall performance.…”

Section: Comparisonmentioning

confidence: 99%

“…Nevertheless, since 5G mm-wave base stations perform beamforming using a large number of PAs, they should be inexpensive, mass-producible and easy-tointegrate with phase controller. For this reason, SiGe BiC-MOS and CMOS PAs have been proposed as preferred for this application [27], [28], [31]- [33]. In addition, while circuit topologies such as Doherty and outphasing are highly efficient as described in [34], [35], they tend to be large in size, so miniaturised PAs are preferable.…”

Section: Introductionmentioning

confidence: 99%

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A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

Kamidaki

Okuyama

Kubo

et al. 2023

IEICE Trans. Electron.

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This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a lowloss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5 GHz. Measurements of the front-end in TX mode demonstrate peak S 21 of 30.3 dB at 26.7 GHz, S 21 3-dB bandwidth of 9.8 GHz from 22.2 to 32.0 GHz, and saturated output power (Psat) above 20 dBm with power-added efficiency (PAE) above 22% from 24 to 30 GHz. For a 64-QAM 400 MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, −25 dBc error vector magnitude (EVM) is measured at an average output power of 12.3 dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.

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“…Table 1 compares this work to recently reported PA ICs [27], [28], [31]- [33]. The ITRS FoM is included to compare the overall performance.…”

Section: Comparisonmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

Kamidaki

Okuyama

Kubo

et al. 2023

IEICE Trans. Electron.

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show abstract

Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS

SUGIURA

Yoshimasu

2023

IEICE Trans. Electron.

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25-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor in 45-nm SOI CMOS

Cited by 2 publications

References 6 publications

A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

A 24-30GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

Ka-Band Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor and Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS

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