25 Gb/s Data Transmission Using a Directly Modulated InGaAlAs DBR Laser over 14 nm Wavelength Tuning Range

Zhou, D.; He, Yiming; Lu, Dan; Liu, Song; Zhao, Lingjuan; Wang, Wei

doi:10.3390/photonics8030084

Cited by 2 publications

(1 citation statement)

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“…For different wavelengths, a similar bandwidth can be obtained for the device. Compared to the InGaAsP MQWs, the InGaAlAs MQWs have a larger conduction band offset and smaller valence band offset, which leads to stronger confinement for electrons and lower confinement for holes, favoring better high frequency characteristics for modulators [21].…”

Section: Introductionmentioning

confidence: 99%

EAM Integrated Widely Tunable DBR Lasers Based on InGaAlAs/InP MQWs

Zhong,

Li,

Zhou

et al. 2024

IEEE Photonics J.

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We report the fabrication of a first electroabsorption modulated widely tunable DBR lasers (TEML) based on InGaAlAs multi-quantum well (MQW) material, which is superior than InGaAsP MQWs for the fabrication of both modulators and lasers. The device is fabricated by using buttjoint material growth technology and operates at a wavelength of 1.5 μm. An over 12 nm wavelength tuning range can be obtained. The characteristic temperature of the device is 83 K, which is notably higher than that for a laser based on InGaAsP MQWs. At 25 ℃, the electro-absorption modulator (EAM) of the device has a small signal modulation bandwidth exceeding 27 GHz, which is notably higher than the bandwidth for a TEML device having the same structure but InGaAsP MQW active material. At 25 Gb/s NRZ data modulation, to achieve 10E-10 bit error rate (BER), the power penalty after 5 and 10 km fiber transmission are 1 and 3 dB, respectively. The device is a promising low-cost light source for future high-capacity wavelength division multiplexing (WDM) optical communication systems.

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Section: Introductionmentioning

confidence: 99%