25-Gb/s 1310-nm Optical Receiver Based on a Sub-5-V Waveguide-Coupled Germanium Avalanche Photodiode

Chen, Hong Tao; Verbist, Jochem; Verheyen, Peter; Heyn, Peter De; Lepage, Guy; Coster, J. De; Absil, P.; Moeneclaey, Bart; Yin, Xin; Bauwelinck, Johan; Campenhout, Joris Van; Roelkens, G.

doi:10.1109/jphot.2015.2460116

Cited by 17 publications

(25 citation statements)

References 10 publications

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“…However, [8] showed a Ge APD capable of 40 Gb/s NRZ at 3.4 V bias. Bit-error rate (BER) measurements were only performed for 10 Gb/s NRZ and indicated a relatively low estimated sensitivity of <-16.5 dBm at HD-FEC, at least 5 dB less than what the presented Ge APD in this paper achieved at twice the bitrate for NRZ [9].…”

Section: Introductioncontrasting

confidence: 57%

“…20 Gb/s and 25 Gb/s) as reported in [9], we can estimate the sensitivity penalty of doubling the bitrate through PAM-4 modulation. For 20 Gb/s a sensitivity (with respect to HD-FEC) of approximately -22 dBm of received optical power for a PRBS of 2 31 − 1 at an ER of 8.3 dB was obtained.…”

Section: Resultsmentioning

confidence: 97%

“…The APD in this receiver had current-gain of 6.6 and an estimated bandwidth of ∼16 GHz. More details on the design, on-wafer characteristics, high-speed operation for NRZ data up to 28 Gb/s along with a discussion on how to improve the relatively low primary responsivity can be found in [9]. The Ge APD was wirebonded to a TIA to evaluate the largesignal multilevel performance.…”

Section: Designmentioning

confidence: 99%

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40-Gb/s PAM-4 Transmission Over a 40 km Amplifier-Less Link Using a Sub-5V Ge APD

Verbist

Lambrecht

Moeneclaey

et al. 2017

IEEE Photon. Technol. Lett.

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Abstract-Avalanche photodetectors (APDs) integrated in a silicon platform have the potential to significantly improve the link budget of optical links compared to conventional p-i-n photodetectors, while only requiring CMOS-friendly biasing voltages. We demonstrate an optical receiver based on a 1310 nm <5 V Germanium APD and a low-power transimpedance amplifier that offers a 5-to-6 dB sensitivity improvement compared to operation in PIN-mode. Sub-FEC transmission using PAM-4 in an amplifier-less link over more than 42 km at 40 Gb/s and over more than 10 km at 50 Gb/s is shown with a commercial directly modulated laser as transmitter.

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Section: Introductioncontrasting

confidence: 57%

Section: Resultsmentioning

confidence: 97%

Section: Designmentioning

confidence: 99%

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40-Gb/s PAM-4 Transmission Over a 40 km Amplifier-Less Link Using a Sub-5V Ge APD

Verbist

Lambrecht

Moeneclaey

et al. 2017

IEEE Photon. Technol. Lett.

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“…The fabrication does not require complex implantation sequences to activate the semiconductor locally. In addition, there is no need for seeding layers to epitaxially grow crystalline materials on the waveguides for light detection or modulation, in contrast to the fabrication of Ge photodetectors [41,250] and SiGe or Ge electro-absorption modulators [60,251]. SLG integration reduces the complexity and the number of steps compared with 3D device integration [60,251], as well as the total temperature budget to integrate the active detector or modulator on the Si waveguides.…”

Section: Wafer-scale Integrationmentioning

confidence: 99%

Graphene-based integrated photonics for next-generation datacom and telecom

Romagnoli¹,

Sorianello²,

et al. 2018

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Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10 −3 . It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for graphene-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications.Photonics is poised to play an increasingly important role in ICT ( Fig. 1a), since the fixed high capacity links are largely based on photonic technologies. Photonic devices need to support ultra-large bandwidth operation, for example, 200 Tb s−1 in a single fibre[9] and >10 Tb s −1 cm −2 in integrated Si photonics chips [10]. To achieve this, the key components of Si photonics, photodetectors and modulators, need very high performances in terms of speed (≥25 Gb s −1 ), footprint (<1 mm 2 ), insertion loss (<4 dB), manufacturability (>10 6 pieces per year) and power consumption (<1 pJ bit −1 ). To date, these requirements have not been fulfilled in one system [11]. Furthermore, in terms of production volumes, photonics is not yet comparable to microelectronics [12], even if the increase in demand for optical networks would, by 2021, lead to an average global Internet Protocol (IP) traffic of 3.3 ZB (zettabytes), corresponding to an average usage data rate of ~800 Tb s −1 (refs[13,14]). In the context of the IoT[7], other applications, including infrared (IR) sensors, biosensors, environmental sensors, metrology, quantum communications and machine vision, will require even larger production volumes [13,15].The telecom network can be divided into three segments: access, aggregation and core (Fig. 1a). The access network is the interface between subscribers and the immediate service provider. The aggregation network aggregates all the input data streams from tributary access networks, converging towards the higher-level core network. The aggregation network includes local and metropolitan networks, which then converge to regional networks. A local area network (LAN) interconnects computers within a limited area, such as a residence, school, laboratory, university or office building. A metropolitan area network (MAN) interconnects us...

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“…Because of that, extra electronic stages with trans-impedance amplifiers (TIA) or limiting amplifiers (LA) are typically attached to the devices. Improved performance photo-detectors can be obtained by switching over to devices that exploit an internal multiplication gain 1,14,[40][41][42][43][44][45][46][47][48] , i.e. on-chip avalanche photodetectors (APDs).…”

Section: Introductionmentioning

confidence: 99%

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

Benedikovič

Virot

Aubin

et al. 2020

Integrated Optics: Devices, Materials, and Technologies XXIV

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Owing to its low-cost, high-yield, and dense integration ability, silicon nanophotonics is a good candidate to tackle the needs of exponentially growing communications in data centers, high-performance computers, and cloud services. Moreover, a number of nanophotonic functions are now available on a single chip, as they take advantages of siliconfoundry process maturity and epitaxial germanium integration. Optical photodetectors are key building blocks in the library of group-IV components and their performances are quite successful nowadays. In particular, silicon-germanium waveguide-integrated photodetectors are fixing new standards for next generation of on-chip interconnects in terms of compactness, speed, power consumption and cost. Indeed, conventional pin photodetectors yield good responsivities (~1 A/W in a 1.5 µm wavelength range), high bandwidths (~50 GHz), and dark currents well below 1 µA. Despite recent advances, their optical power sensitivities remain rather modest and speeds are limited to 25 Gbps only, however. Compensating for the insufficient photodetector sensitivity requires higher transmitter output powers and therefore higher energy consumption. Additional energy savings can be obtained by eliminating receiver electronics. Alternatively, an appealing approach is to exploit device structures with an internal multiplication gain to lower even more the power budget and improve energy efficiency of chip-based optical links. In this work, we report on waveguideintegrated photodetectors with lateral silicon-germanium-silicon heterojunctions. Here, we present avalanche photodetectors fabricated on 200-mm silicon-on-insulator wafers using complementary metal-oxide-semiconductorcompatible processes. Devices operate in the low-gain-regime to facilitate high-speed link operations at 1.55 µm wavelengths. An error-free signal detection was achieved at 28 Gbps, with power sensitivity of-11 dBm for 10-9 biterror-rate, which is a relevant link rate for emerging chip-scale optical interconnects.

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25-Gb/s 1310-nm Optical Receiver Based on a Sub-5-V Waveguide-Coupled Germanium Avalanche Photodiode

Cited by 17 publications

References 10 publications

40-Gb/s PAM-4 Transmission Over a 40 km Amplifier-Less Link Using a Sub-5V Ge APD

40-Gb/s PAM-4 Transmission Over a 40 km Amplifier-Less Link Using a Sub-5V Ge APD

Graphene-based integrated photonics for next-generation datacom and telecom

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

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