25.2 A 10MHz 3-to-40V V&lt;inf&gt;IN&lt;/inf&gt; tri-slope gate driving GaN DC-DC converter with 40.5dBµV spurious noise compression and 79.3% ringing suppression for automotive applications

Ke, Xugang; Sankman, Joseph; Chen, Yingping; He, Lenian; Brian, D.

doi:10.1109/isscc.2017.7870445

Cited by 12 publications

(2 citation statements)

References 4 publications

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“…Such waveform shaping techniques, on the gate or switching nodes of the GaN-based circuit, have also been implemented in the E-mode GaN driver ICs. [81][82][83][84] The primary goal of current gate driver designs is to improve reliability and power conversion efficiency and to reduce EMI noise of the GaN power devices in practical applications. As a result, dynamic adjustments of the gate driving strength for safe and efficient switching with fast dead-time corrections are active research areas.…”

Section: Gan Power Modulesmentioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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Gallium nitride (GaN) power transistors have attracted significant interest in the power electronics industry over the past decade as the next-generation power semiconductor devices. GaN power transistors are suitable for high power and high frequency applications due to their higher electron mobility, temperature tolerance, electrical conductivity, critical breakdown electric field, and breakdown voltage compared to the conventional silicon-based transistors and other wide bandgap (WBG) power transistors. In particular, GaN-on-silicon (GaN-on-Si) technology has opened up the possibility of manufacturing high-performance, low-cost WBG power devices in silicon-compatible fabrication facilities. The first GaN power transistor structure to be developed was the normally-ON depletion mode (D-mode) device. It relies on the highly mobile two-dimension electron gas (2DEG) at the GaN/AlGaN epitaxial layers' interface to provide very low on-resistance. The normally-OFF enhancement mode (E-mode) GaN power transistor soon became available by controlling the 2DEG using various gate structures. This paper provides a review of the developments of GaN power transistors followed by a survey on current state-of-the-art GaN power technologies and applications, including comparisons between GaN growth substrates and developments of enhancement mode (E-mode) device structures and their process techniques. Moreover, developments of power module designs are also addressed, including gate driver designs and their requirements, and packaging techniques for power transistors and power modules.

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Section: Gan Power Modulesmentioning

confidence: 99%

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Kim

Zhang

et al. 2020

Journal of Elec Materi

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“…With comparable voltage and current rating, GaN has a much better figure of merit ( R DS,on × Q G ) as well as smaller output capacitance and zero reverse recovery charge [11, 12]. These features enable the converter using GaN devices operating in a considerably higher switching frequency (MHz) while maintaining high efficiency, leading to a dramatic size reduction for the system [2, 13, 14].…”

Section: Introductionmentioning

confidence: 99%

Digitally controlled GaN‐based MHz active clamp flyback converter with dynamic dead time optimisation for AC–DC adapter

2020

IET power electron.

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Current Sensing Techniques: Principles and Readouts

Kashmiri

2019

Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits

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25.2 A 10MHz 3-to-40V V<inf>IN</inf> tri-slope gate driving GaN DC-DC converter with 40.5dBµV spurious noise compression and 79.3% ringing suppression for automotive applications

Cited by 12 publications

References 4 publications

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review

Digitally controlled GaN‐based MHz active clamp flyback converter with dynamic dead time optimisation for AC–DC adapter

Current Sensing Techniques: Principles and Readouts

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