248pW, 0.11mV/&amp;#x00B0;C glitch-free programmable voltage detector with multiple voltage duplicator for energy harvesting

Someya, T.; Fuketa, Hiroshi; Matsunaga, Kenichi; Morimura, Hiroki; Sakurai, Takayasu; Takamiya, Makoto

doi:10.1109/esscirc.2015.7313874

Cited by 9 publications

(11 citation statements)

References 5 publications

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“…To meet these requirements, there has been significant recent interest in ultra-low power references. Among these references are subthreshold references [1][2][3][4][5][6][7][8][9][10], such as the 2T transistor-based voltage reference shown in Figure 1 [1,2,3,7,10].…”

Section: Introductionmentioning

confidence: 99%

“…There have been several papers which have demonstrated trimming of the temperature coefficient [1,2,3,4,6,7,10]. However, only a few have shown precision trimming of the reference voltage itself [1,8,9]. Lin has demonstrated that multiple voltage references can be generated from the same circuit [1].…”

Section: Introductionmentioning

confidence: 99%

“…Lin has demonstrated that multiple voltage references can be generated from the same circuit [1]. Someya has shown voltage trimming using stacked Vgs transistors to achieve a voltage resolution of 50mV [8]. In a follow-up paper [9], Someya utilized resistors to achieve a resolution of 5mV, but these resistors required a very large area to obtain high enough resistance for nW level power.…”

Section: Introductionmentioning

confidence: 99%

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A Subthreshold Voltage Reference with Coarse- Fine Voltage Trimming

Zagouri

Shor

2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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This paper presents a self-biased subthreshold voltage reference with several types of trimming options. A current trim is used to achieve similar currents across process corners.A coarse/fine voltage trim was implemented, which utilized different Vth's of the process as well as the reverse short-channel effect. The range of voltages obtained vary from 86mV to 536mV with steps of 16mV. The circuit was designed in a standard 0.18 CMOS process. Simulation results at Vcc=1V shows a temperature coefficient (TC) between 40 to 400 ppm/ o C at different trims over a 120 o C range. The nominal power consumption was 1.35nW with a highly compact area of 0.002 mm 2 .

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Subthreshold Voltage Reference with Coarse- Fine Voltage Trimming

Zagouri

Shor

2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…In this paper, a novel circuit scheme for a VD [9] is introduced to achieve ultra-low power operation, robustness against PVT variations, and glitch-free operation at the same time. The theoretical analysis and design consideration of the proposed VD is added to [9]. This paper is organized as follows.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of Ultra-Low Power Glitch-Free Programmable Voltage Detector Based on Multiple Voltage Copier

Someya

Fuketa

Matsunaga

et al. 2017

IEICE Trans. Electron.

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This paper presents an ultra-low power and temperatureindependent voltage detector with a post-fabrication programming method, and presents a theoretical analysis and measurement results. The voltage detector is composed of a programmable voltage detector and a glitch-free voltage detector to realize both programmable and glitch-free operation. The programmable voltage detector enables the programmable detection voltages in the range from 0.52 V to 0.85 V in steps of less than 49 mV. The glitch-free voltage detector enables glitch-free operation when the supply voltage is near 0 V. A multiple voltage copier (MVC) in the programmable voltage detector is newly proposed to eliminate the tradeoff between the temperature dependence and power consumption. The design consideration and a theoretical analysis of the MVC are introduced to clarify the relationship between the current in the MVC and the accuracy of the duplication. From the analysis, the tradeoff between the duplication error and the current of MVC is introduced. The proposed voltage detector is fabricated in a 250 nm CMOS process. The measurement results show that the power consumption is 248 pW and the temperature coefficient is 0.11 mV/ • C.

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“…But this structure does not improve the TC of the detection voltage. [6] proposed a voltage detector constructed by using transistors with different threshold voltage. However, the detection voltage generated by this method is a fixed value, and an arbitrary detection voltage cannot be obtained by adjusting the circuit.…”

mentioning

confidence: 99%

A Low Temperature Coefficient and Low Power Voltage Detector for Energy Harvesting

2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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A voltage detector with low temperature coefficient (TC) and low power for energy harvesting applications is proposed in this paper. The detection voltage is adjusted by bias, avoiding excessive transistor size. Meanwhile, the temperature dependent term is eliminated by adjusting the transistor size. Proposed voltage detector is implemented in a standard 180nm CMOS process. The simulated results show that the voltage detector consumes 78pA from a 1V supply, the TC of the proposed voltage detector is 0.26mV/℃ at tt corner and 0.08mV/℃ at ff corner, which indicate 5x performance enhancement without significant power consumption.

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248pW, 0.11mV/°C glitch-free programmable voltage detector with multiple voltage duplicator for energy harvesting

Cited by 9 publications

References 5 publications

A Subthreshold Voltage Reference with Coarse- Fine Voltage Trimming

A Subthreshold Voltage Reference with Coarse- Fine Voltage Trimming

Design and Analysis of Ultra-Low Power Glitch-Free Programmable Voltage Detector Based on Multiple Voltage Copier

A Low Temperature Coefficient and Low Power Voltage Detector for Energy Harvesting

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