248nm Process Is Capable for sub 0.09 um Groundrules

Production feasibility under groundrules smaller than 0.09 um while maintain the cost advantages in KrF exposure tools systems becomes more and more important to all companies including 300mm/200mm FABs. The k1 factor for sub 0.09um with current popular KrF exposure tools will be comprable to 0.028 um at 1.3 NA with 193 nm immersion tools. For line/space patterns, some good results had been achieved. But for contact hole patterns, the patterning is much more challenging. It is the biggest obstacle to transfer all layers patterning from ArF to KrF tools on sub-90nm technology node. In order to improve cotanct holes resoltuion and process window, lots of methods had been proposed in advanced technology. But their manufacturing costs are not satisfied when they are used in 90nm nodes with pure KrF process. In this paper, we will discuss the contact hole patterning with focus tilting technology on 0.82NA KrF scanners. The process window, OPC performance and its issues are discussed. Combine with the line/space pattern results, all layers design rule with KrF process had been pushed to the same level of gerneric ArF process at 90nm nodes.

“…Based on those techniques some good results have been achieved with KrF exposure tools systems [2][3]. We also demonstrated in our study results for line/space patterns [4][5][6][7].…”

Section: Introductionsupporting

confidence: 69%

90nm Contact Hole Study with KrF Process

Wang¹,

Guo²,

Xu³

2014

“…In previous study, we had demonstrated acceptable process window, DOF, MEEF and LWR. In this paper we will focus on the CD and DOF change with different layout design [13].…”

Section: Methodsmentioning

confidence: 99%

“…When we can not get enough improvement from optics, we still can get it from other parts such as photoresists. Based on this idea, we had proposed some new approaches and achieve positive results [13].…”

Section: Introductionmentioning

confidence: 99%

DFM Study in Low k1 Lithography Process

Wang¹,

Guo²,

Liu³

et al. 2012

For low k1 lithography process, some minor facotrs' impacts are strongly enhanced such as MEEF, lens distortion, wafer topography, pattern density and so on. How to minimize those impacts becomes more and more important. Unfortunately those impacts are not controlled by lithography process itself and caused by other modules such as layout design, integration schemes, mask making, film deposition, CMP and so on. A method to reduce those impacts is quietly needed. DFM (Design for Manufacturability) is a popular and effective approach to get more robust process by reducing pattern loading effect. In this paper, we will show our study on wafer local topography in low k1 lithography process. Products with sub-90nm design rules and different device structures are processed by pure KrF process. The maximum 0.82NA KrF scanner tools are used. The k1 factor is low enough to enhance the impacts. By using DFM solutions, we had resolved these issues and the process window are obviously improved.

“…Meanwhile, we need to achieve competitive manufacturing cost by using pure KrF process. It has been studied that KrF process can meet the design requirement at 90 or sub90nm nodes [4][5][6][7][8][9]. If we can deal with smaller EW pattern fidelity and high Ge concentration SiGe film, we can avoid use ArF process and maintain an attractive cost.…”

Section: Lithography Requirement Discussmentioning

confidence: 99%

Lithography Solutions in Novel High Frequency SiGe HBT Device

Wang

Chen

et al. 2012

Self Cite

Advanced vertical NPN SiGe HBT device integrated in a CMOS technology are widly used in RF application such as LNA, PA and Mixer circuit. It can be fabricated by different architectures. HHNEC novel SiGe HBT device with non-EPI collector, borderless emitter and deep contact structures is one of them. It can offer scalable break down volatages, smaller device area and low manufactering cost. For SiGe HBT devices, SiGe base, EW (emmitter window) and EP (Emitter poly) are most critical. The device performance is very sensitive to their CD, pattern fidelity and miss-alignment. On the other sides, SiGe film optical characteristics are very sensitive to its formulation process such as Ge concentration, thermal temperature, crystal lattice and so on. How to setup a robust base to emmiter loop is the most important. In this paper, we will introduce our study result on 150G high frequency SiGe HBT device. The key design rule is comprable to sub 110nm design rule. Pure KrF process with maximum 0.82NA scanner tools is used. SiGe film impact to lithograhpy process is studied. New lithography and OPC solutoins are demostrated. The different solutions for device sensitivity are also discussed.