Ferroelectricity in antiferroelectric NaNbO<sub>3</sub>crystal

Tyunina, M.; Dejneka, A.; Rytz, Daniel; Gregora, I.; Borodavka, Fedir; Vondráček, Martin; Honolka, Jan

doi:10.1088/0953-8984/26/12/125901

Cited by 25 publications

(22 citation statements)

References 32 publications

(49 reference statements)

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“…Then we analyze thermooptical behavior in similar, but electrodeless PSTO film. The comparison of electrical and thermooptical properties validates optical evidence of ferroelectricity in epitaxial thin films, in agreement with that in bulk perovskite oxide ferroelectrics 25–36 . Next, we investigate thermooptical behavior and demonstrate the ferroelectric phase transitions in electrodeless epitaxial PSTO films of ∼5 nm in thickness grown on insulating substrates.…”

Section: Introductionsupporting

confidence: 78%

“…A weak linear dependence n ( T ) at the temperatures > 600 K (Fig. 1e) indicates the PE state in the PSTO/STO film, similarly to that in ferroelectric crystals 25–36 . As shown previously, deviation from the linear dependence and a decrease of n are caused by appearance of polarization in perovskite oxide ferroelectrics and related materials 27–34 .…”

Section: Resultsmentioning

confidence: 85%

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Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films

Pacherová

Chvostová

Kocourek

et al. 2018

Sci Rep

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Ferroelectric films may lose polarization as their thicknesses decrease to a few nanometers because of the depolarizing field that opposes the polarization therein. The depolarizing field is minimized when electrons or ions in the electrodes or the surface/interface layers screen the polarization charge or when peculiar domain configuration is formed. Here, we demonstrate ferroelectric phase transitions using thermooptical studies in ∼5-nm-thick epitaxial Pb0.5Sr0.5TiO3 films grown on different insulating substrates. By comparing theoretical modeling and experimental observations, we show that ferroelectricity is stabilized through redistribution of charge carriers (electrons or holes) inside ultrathin films. The related high-density of screening carriers is confined within a few-nanometers-thick layer in the vicinity of the insulator, thus resembling a two-dimensional carrier gas.

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Section: Introductionsupporting

confidence: 78%

Section: Resultsmentioning

confidence: 85%

Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films

Pacherová

Chvostová

Kocourek

et al. 2018

Sci Rep

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“…In Fig. 3(a) The observed ferroelectric relaxor behaviour can be fitted with the Curie-Weiss law, ‫׳‬ = /( − Ѳ) in the paraelectric region 23 above Tm as shown in Fig. 3(b).…”

Section: B Dielectric Analysismentioning

confidence: 76%

Magneto-dielectric effect in relaxor superparaelectric Tb2CoMnO6 film

et al. 2020

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We report magneto-dielectric properties of partially B-site ordered monoclinic Tb2CoMnO6 double perovskite thin film epitaxially grown by metalorganic aerosol deposition technique.Transmission electron microscopy and electron energy loss spectroscopy mapping shows the presence and distribution of both Co 2+ and Co 3+ ions in the film, evidencing a partial B-site disorder, which was further confirmed by the observation of reduced saturation magnetization at low temperatures. The ferromagnetic Curie temperature, TC=110 K, is slightly higher as compared to the bulk value (100 K) probably due to an in plane tensile strain. Remarkably, a short range ordering of spins at T*~190 K>>TC was established and assigned to the B-site disorder in the film.Two different dielectric relaxation peaks have been observed; they merge at the same temperature T* of short range spin correlations. Moreover, an unexpected high temperature dipolar relaxorglass-like transition at T~T* was observed, at which a coupling to short range magnetic correlations results in a 4% magneto-dielectric coupling.

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“…This is indeed very favorable for enhanced persistent luminescence. Furthermore, one can notice that the TL glow peak for the NNOP is not symmetrical, especially in its crystal form (see Figure ), which presents several peaks around 266 K. One reason might be the phase transition as it was reported that in this perovskite structure, phase transition occurs between ferroelectrics (FEs) and anti‐ferroelectrics (AFEs) at about 265 K . Besides, it might be because there is more than one trap in our composition.…”

Section: Resultsmentioning

confidence: 82%

Tunable trap depth for persistent luminescence by cationic substitution in Pr³⁺:K_1−xNa_xNbO₃ perovskites

Castaing

Rytz

et al. 2018

J Am Ceram Soc

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The development of efficient red-emitting persistent phosphor is still an ongoing challenge. In the search of persistent materials in red range, Pr 3+ is a good candidate owing to its transitions between 1 D 2 and 3 H 4 state at about 612 nm. In this paper, we investigated the red persistent properties of Pr 3+ -doped perovskite oxide ABO 3 , (A: K, Na and B: Nb), which can be elaborated as large single crystal.KNbO 3 :Pr 3+ appears to have weak photoluminescence and no persistent luminescence. However, the cationic substituted compounds K 1−x Na x NbO 3 :Pr 3+ (x = 0, 0.4, 0.5, 0.7 0.9, 1) exhibit intense persistent luminescence, which increases steadily with increase in Na content. We correlated persistence behavior with the position of Metal-to-Metal Charge Transfer (MMCT) band, which plays crucial role in tuning of the trap depth. The MMCT band position decreases with the addition of Na contents and the thermoluminescence peak shifts toward higher temperature indicating the formation of deeper traps. This is in good agreement with the enhancement of the persistent luminescence suggesting that a proper tailoring of MMCT is needed to design efficient Pr 3+ -persistent phosphors with better performance. A detailed analysis on the trap depth, bandgap energy, and persistent luminescence properties is reported tuning the composition in the K 1−x Na x NbO 3 :Pr powder. K E Y W O R D SK 1−x Na x NbO 3 , perovskites, persistent luminescence, Pr 3+ , Tunable trap depth Liyi Li and Victor Castaing are equally contributed to this work.

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Ferroelectricity in antiferroelectric NaNbO₃crystal

Cited by 25 publications

References 32 publications

Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films

Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films

Magneto-dielectric effect in relaxor superparaelectric Tb2CoMnO6 film

Tunable trap depth for persistent luminescence by cationic substitution in Pr³⁺:K_1−xNa_xNbO₃ perovskites

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Ferroelectricity in antiferroelectric NaNbO3crystal

Cited by 25 publications

References 32 publications

Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films

Thermooptical evidence of carrier-stabilized ferroelectricity in ultrathin electrodeless films

Magneto-dielectric effect in relaxor superparaelectric Tb2CoMnO6 film

Tunable trap depth for persistent luminescence by cationic substitution in Pr3+:K1−xNaxNbO3 perovskites

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Ferroelectricity in antiferroelectric NaNbO₃crystal

Tunable trap depth for persistent luminescence by cationic substitution in Pr³⁺:K_1−xNa_xNbO₃ perovskites