MgZnO p–n heterostructure light-emitting devices

Liu, Jishan; Shan, Chongxin; Li, Binghui; Zhang, Zhenzhong; Liu, Kewei; Shen, Dezhen

doi:10.1364/ol.38.002113

Cited by 24 publications

(25 citation statements)

References 22 publications

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“…The substrate temperature was kept at 650°C and the pressure in the growth chamber was kept at 3 × 10 3 Pa during the growth process. The p-Mg 0.35 Zn 0.65 O layers were grown by the plasma-assisted molecular beam epitaxy technique (VG V80H) using a lithium and nitrogen codoping method [27][28][29] employing high-purity elemental zinc, magnesium, and lithium contained in Knudsen cells as Zn, Mg, and Li sources, respectively, and atomic oxygen and nitrogen generated from O 2 and NO gases via 13.56 MHz radio frequency plasma cells operated at 300 W as O and N sources, respectively. During the growth process, the pressure in the growth chamber was fixed at 2 × 10 −5 mbar and the O 2 and NO flow rate were maintained at 1.0 sccm and 0.9 sccm, respectively.…”

Section: Methodsmentioning

confidence: 99%

Electrically pumped random lasers with p-diamond as a hole source

Shan

Zhou

et al. 2015

Optica

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Electrically pumped lasing has been one of the most challenging issues for random lasers. Since holes are rare in most semiconductors, hole injection is necessary for electrically pumped lasers. Here in this article, by employing p-type diamond synthesized via a temperature gradient method under high-pressure and high-temperature conditions as a hole source, electrically pumped random lasing has been observed from p-Mg 0.35 Zn 0.65 O∕n-ZnO core-shell nanowire structures. The mechanism for the lasing can be attributed to the recombination of the electrons in the nanowires with the holes injected from the p-type diamond. Fig. 6. Room temperature EL spectra of the p-Mg 0.35 Zn 0.65 O∕ n-ZnO core-shell nanowire heterostructures with p-type diamond as the hole source layer under different injection currents. The inset shows the dependence of the integrated emission intensity of the device on the injection current.

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Section: Methodsmentioning

confidence: 99%

Electrically pumped random lasers with p-diamond as a hole source

Shan

Zhou

et al. 2015

Optica

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“…Advances in the material issues of Mg x Zn 1−x O thin films may lead to applications including MgZnO p-n heterostructure light-emitting devices that operate at 355 nm [14], plasmonic generation in Ga-doped MgZnO for solar cell technologies [15], and solar-blind UV detectors with a cutoff at 270 nm [16]. Additionally, it has been found that the MgZnO thin film transistors at the small Mg composition range Mg 0.06 Zn 0.94 O have better device performance than pure ZnO channel devices [17].…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of ultra-wide-bandgap MgZnO alloys with wurtzite structure

Thapa

Huso

Lapp

et al. 2018

J Mater Sci: Mater Electron

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Mg x Zn 1−x O thin films were grown as metastable alloys via a sputtering technique in order to achieve single-phase wurtzite alloys with deep-UV optical bandgaps. As-grown alloys with Mg composition range 0-72% resulted in optical bandgaps spanning the UV-range of 3.3-4.4 eV. The thermal stability of the alloys was studied via post-growth controlled annealing experiments up to 900 °C. Alloys with low Mg up to 34% were found to be highly stable and retained their optical and material properties; however, alloys with higher Mg, up to 72%, were found to be unstable and were phase separated into wurtzite and cubic structural phases with respective optical bandgaps at ~ 3.5 and 6.0 eV. Both the as-grown and annealed alloys were studied using X-ray diffraction for structural identification, transmission spectroscopy for bandgap analysis, and Raman scattering for mapping the phonon mode-behavior. The experimental value for the solubility limit was found to be ~ 30%. A straightforward model calculation based on the Raman-mode saturation behavior yielded a similar value for the solubility limit of the alloys. The results are discussed in terms of available phase-diagrams for stable-state ceramics alloys that were grown under thermodynamics equilibrium conditions.

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“…The study about a structured optical field with the inhomogeneous SoP and a special caustic phase in the field cross section still keeps a challenging regime. [16][17][18] In particular, whether the SoP can be flexibly manipulated and controlled during propagation in free space is a topic being pursued because of its potential applications and fundamental physics relevance. Recently, some researches about the spin separation of light and spin-dependent propagation have been demonstrated, [19,20] A desirable intensity pattern can be achieved by tailoring the initial SoP, [19] especially in relation with the spin Hall effect of light.…”

Section: Introductionmentioning

confidence: 99%

Flexible Manipulation of the Polarization Conversions in a Structured Vector Field in Free Space

Chen

Gao

et al. 2017

Laser & Photonics Reviews

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The conversion between different polarizations generally requires an optical element or an optical system. We demonstrate, theoretically and experimentally, that the conversion between different states of polarization (SoP) can be flexibly manipulated in a structured optical field by itself. During the structured optical field propagation in free space, any two orthogonal polarizations can be generated and auto‐focus at any desired propagation positions by purposely designing the initial SoP distribution and a caustic phase in the field cross‐section. The experiment arrangement combines a caustic‐based approach and a 4f optical system. This approach provides a way to flexibly manipulate the polarization conversions in free space propagation by the optical field itself (without any physical element along the propagation path), may lead to more complex and flexible vectorial manipulations of an optical field scenarios and potential applications in corresponding areas.

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MgZnO p–n heterostructure light-emitting devices

Cited by 24 publications

References 22 publications

Electrically pumped random lasers with p-diamond as a hole source

Electrically pumped random lasers with p-diamond as a hole source

Thermal stability of ultra-wide-bandgap MgZnO alloys with wurtzite structure

Flexible Manipulation of the Polarization Conversions in a Structured Vector Field in Free Space

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