Untitled

Hsu, D. T.; Shi, Frank G.; Lopatin, S.; Shacham‐Diamand, Yosi; Zhao, Bin; Brongo, M.; Vasudev, P.K.

doi:10.1023/a:1006669728715

Journal of Materials Science Letters

1999

DOI: 10.1023/a:1006669728715

|View full text |Cite

Untitled

D. T. Hsu¹,

Frank G. Shi²,

S. Lopatin³

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2004

2010

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

(1 citation statement)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A significant number of publications [15][16][17][18] focus on the influence of the plating bath composition on the properties of the electroless deposited copper and report changes in adhesion due to plating bath composition. The influence of the surface on which the electroless copper is plated on the adhesion strength is however not very clear in these cases.…”

mentioning

confidence: 99%

Influence of Chemical Pretreatment of Epoxy Polymers on the Adhesion Strength of Electrochemically Deposited Cu for Use in Electronic Interconnections

Siau

Vervaet

Schacht

et al. 2004

J. Electrochem. Soc.

View full text Add to dashboard Cite

Epoxy polymers are frequently used for electronic purposes, in particular for built up layers and micro-vias in advanced printed circuit boards. The adhesion of the plated metal layers to this polymer surface is of prime importance for the reliability of the interconnection. Chemical treatment of the polymer surface changes the chemical and physical nature of the polymer. This results in specific groups of the polymer chain present on the surface and changes the roughness of the polymer layer. The influence of swellers and oxidizing agents on the polymer surface roughness and the chemical properties of the surface are investigated. The surface is analyzed by atomic force microscopy, attenuated total reflectance-infrared ͑ATR-IR͒ spectroscopy, dynamic contact analyses ͑DCA͒, and peel strength measurements after electroless and electroplating of the surface. The changing of the chemical functionalities on the surface, which is detected by ATR-IR and DCA plays an important part in the adhesion strength of electrochemically plated copper. The combination of roughness and the presence of certain chemical groups, like alcohols, play an important role in the adhesion of electrochemically deposited metals to the polymer surface.

show abstract

mentioning

confidence: 99%

Influence of Chemical Pretreatment of Epoxy Polymers on the Adhesion Strength of Electrochemically Deposited Cu for Use in Electronic Interconnections

Siau

Vervaet

Schacht

et al. 2004

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Laser-induced site-selective silver seeding on polyimide for electroless copper plating

Chen

Zhao

2006

Applied Surface Science

View full text Add to dashboard Cite

Effects of TaN, Ru, and Pt electrodes on thermal stability of hafnium-based gate stacks

Kwon

Chabal

2010

Journal of Applied Physics

View full text Add to dashboard Cite

Potential p-FET high-work function metals, TaN, Ru, and Pt are shown to have distinct effects on the stability of Hf-based gate stacks during a thermal process. Ru and Pt promote catalytic decomposition of the underlying dielectrics, resulting in the formation of HfSix and Ru(Pt)Six at 950 (900) °C. With Ru, hydroxyl impurities are critical in silicidation which is localized in the vicinity of voids where the Si substrate is exposed through partial HfO2 and SiO2 decomposition. The degree of silicide formation is greater with Pt, occurring upon major decomposition of the underlying dielectrics with or without hydroxyl impurities. Transfer of electrons from the HfO2 oxygen vacancy to Ru and Pt may play a role in the decomposition of the dielectric films. In contrast, the thermal evolution of TaN-gate stacks is very similar to that of HfO2 stacks without any capping metal layer. With annealed HfO2 and HfO2/TaN stacks there is no detectable metal diffusion into the dielectrics, and the overall compositional stability is preserved except for the growth of interfacial SiO2.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Untitled

Cited by 3 publications

References 3 publications

Influence of Chemical Pretreatment of Epoxy Polymers on the Adhesion Strength of Electrochemically Deposited Cu for Use in Electronic Interconnections

Influence of Chemical Pretreatment of Epoxy Polymers on the Adhesion Strength of Electrochemically Deposited Cu for Use in Electronic Interconnections

Laser-induced site-selective silver seeding on polyimide for electroless copper plating

Effects of TaN, Ru, and Pt electrodes on thermal stability of hafnium-based gate stacks

Contact Info

Product

Resources

About