220-MHz monolithically integrated optical sensor with large-area integrated PIN photodiode

Förtsch, Michael; Zimmermann, Horst; Pless, H.

doi:10.1109/jsen.2006.870168

Cited by 17 publications

(13 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the PIN photodiode has responsivities of R = 0.16 A/W and R = 0.48 A/W at optical wavelengths of k = 410 and k = 780 nm, respectively. The frequency bandwidth of the PIN photodiode is 720 MHz at an optical wavelength of k = 660 nm, and 700 MHz at an optical wavelength of k = 780 nm [12]. The frequency bandwidth of the PIN photodiode at an optical wavelength of k = 410 nm has not been measured.…”

Section: Experimental and Simulation Resultsmentioning

confidence: 99%

See 1 more Smart Citation

A 122 TΩ Hz transimpedance bandwidth product BiCMOS optical sensor front-end with a 54.7 dB voltage-controlled photo-sensitivity range

Tadic

Marchlewski

Zimmermann

2008

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

An optical sensor front-end with integrated PIN photodiode in 0.6 lm BiCMOS technology intended for universal optical storage operation is presented. It is based on a mixed current conveyor and voltage amplifiers topology avoiding stability problems. The transimpedance is continuously variable and directly proportional to a voltagecontrolled resistance. Another voltage-controlled resistor within a variable-gain voltage amplifier increases the photosensitivity range. A fixed-gain voltage amplifier and a current biasing of the current conveyor enable frequency bandwidth enhancement leading to a large transimpedance bandwidth product. A linearity error smaller than 2.8%, a photo-sensitivity range of 541 (54.7 dB) with the largest photo-sensitivity of 2468 mV/lW, an offset voltage \13.7 mV, a frequency bandwidth up to 277 MHz, a slew rate up to 377 V/ls, a transimpedance bandwidth product up to 122 TX Hz, and a maximum power consumption of \4.3 mW are achieved.

show abstract

Section: Experimental and Simulation Resultsmentioning

confidence: 99%

“…The main building blocks will be described in this chapter. The integrated PIN photodiode [12][13][14] and BiC-MOS implementation of the CCI [10] used in the proposed design are very similar to those in [7][8][9], and their further elaboration will be avoided.…”

Section: Circuit Descriptionmentioning

confidence: 99%

A 122 TΩ Hz transimpedance bandwidth product BiCMOS optical sensor front-end with a 54.7 dB voltage-controlled photo-sensitivity range

Tadic

Marchlewski

Zimmermann

2008

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

show abstract

“…9, if the transconductance of is denoted as , all transistors' drain-source resistance is neglected, the capacitances at the MX and OUTP nodes are denoted as and , the high-frequency differential input impedance, , can be written as (8) Two poles at very-high frequencies are neglected in (8). The coupling-efficiency through C1/C2 is assumed to be 100%.…”

Section: Pre-amplifier Circuit Designmentioning

confidence: 99%

A High-Speed Fully-Integrated POF Receiver With Large-Area Photo Detectors in 65 nm CMOS

Dong

Martin²

2012

IEEE J. Solid-State Circuits

View full text Add to dashboard Cite

This paper describes the design of a multi-gigabit fiber-optic receiver with integrated large-area photo detectors for plastic optical fiber applications. An integrated 250 m diameter non-SML NW/P-sub photo detector is adopted to allow efficient light coupling. The theory of applying a fully-differential pre-amplifier with a single-ended photo current is also examined and a super-Gm transimpedance amplifier has been proposed to drive a of 14 pF to multi-gigahertz frequency. Both differential and common-mode operations of the proposed super-Gm transimpedance amplifier have been analyzed and a differential noise analysis is performed. A digitally-controlled linear equalizer is proposed to produce a slow-rising-slope frequency response to compensate for the photo detector up to 3 GHz. The proposed POF receiver consists of an illuminated signal photo detector, a shielded dummy photo detector, a super-Gm transimpedance amplifier, a variable-gain amplifier, a linear equalizer, a post amplifier, and an output driver. A test chip is fabricated in TSMC's 65 nm low-power CMOS process, and it consumes 50 mW of DC power (excluding the output driver) from a single 1.2 V supply. A bit-error rate of less than 10 has been measured at a data rate of 3.125 Gbps with a 670 nm VCSEL-based electro-optical transmitter.

show abstract

“…The logarithmic converters make use of the exponential current-voltage characteristics of metaloxide-semiconductor field-effect transistors(MOSFETs). These characteristics are come from diffused current in the sub-threshold region of MOSFETs [6][7][8][9]. The former method shows good linearity, but the signal-to-noise ratio(SNR) is decreased or more complex circuitry is needed [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Current-to-Voltage Converter Using Current-Mode Multiple Reset and its Application to Photometric Sensors

Park¹,

Yoon²

2012

Journal of Sensor Science and Technology

View full text Add to dashboard Cite

Using a current-mode multiple reset, a current-to-voltage(I-V) converter with a wide dynamic range was produced. The converter consists of a trans-impedance amplifier(TIA), an analog-to-digital converter(ADC), and an N-bit counter. The digital output of the I-V converter is composed of higher N bits and lower bits, obtained from the N-bit counter and the ADC, respectively. For an input current that has departed from the linear region of the TIA, the counter increases its digital output, this determines a reset current which is subtracted from the input current of the I-V converter. This current-mode reset is repeated until the input current of the TIA lies in the linear region. This I-V converter is realized using 0.35 LSI technology. It is shown that the proposed I-V converter can increase the maximum input current by a factor of 2 N and widen the dynamic range by 6 N . Additionally, the I-V converter is successfully applied to a photometric sensor.

show abstract

220-MHz monolithically integrated optical sensor with large-area integrated PIN photodiode

Cited by 17 publications

References 13 publications

A 122 TΩ Hz transimpedance bandwidth product BiCMOS optical sensor front-end with a 54.7 dB voltage-controlled photo-sensitivity range

A 122 TΩ Hz transimpedance bandwidth product BiCMOS optical sensor front-end with a 54.7 dB voltage-controlled photo-sensitivity range

A High-Speed Fully-Integrated POF Receiver With Large-Area Photo Detectors in 65 nm CMOS

Current-to-Voltage Converter Using Current-Mode Multiple Reset and its Application to Photometric Sensors

Contact Info

Product

Resources

About