220–360-GHz Broadband Frequency Multiplier Chains (x8) in 130-nm BiCMOS Technology

Ali, Abdul; Yun, Jong-Won; Kucharski, Maciej; Ng, Herman Jalli; Kissinger, Dietmar; Colantonio, Paolo

doi:10.1109/tmtt.2020.2988869

Cited by 39 publications

(10 citation statements)

References 30 publications

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“…A complete 183 GHz CMOS/InP hybrid heterodynespectrometer with an InP low noise amplifier, a 28 nm CMOS RX, and a 65 nm CMOS spectrometer has been realized recently for spaceborne atmospheric remote sensing applications [12]. Beyond molecular spectroscopy, wideband TXs and RXs and their sub-circuits for the range around 240 GHz are also required for high-bandwidth communication links, [13], [14], [15], [16], [17], and high-resolution radar systems, [18], [19]. TXs and RXs, fabricated in IHP's 0.13 µm SiGe BiCMOS technology, with integrated antennas were demonstrated previously for gas spectroscopy at 238 -252 GHz [20], [21], [22].…”

Section: Introductionmentioning

confidence: 99%

Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz

Schmalz¹,

Rothbart

Gluck

et al. 2021

IEEE Access

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This paper presents a transmitter (TX) and a receiver (RX) with bowtie-antenna and silicon lens for gas spectroscopy at 222-270 GHz, which are fabricated in IHP's 0.13 µm SiGe BiCMOS technology. The TX and RX use two integrated local oscillators for 222 -256 GHz and 250 -270 GHz, which are switched for dual-band operation. Due to its directivity of about 27 dBi, the single integrated bowtie-antenna with silicon lens enables an EIRP of about 25 dBm for the TX, and therefore a considerably higher EIRP for the 2-band TX compared to previously reported systems. The double sideband noise temperature of the RX is 20,000 K (18.5 dB noise figure) as measured by the Y-factor method. Absorption spectroscopy of gaseous methanol is used as a measure for the performance of the gas spectroscopy system with TX-and RX-modules.

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Section: Introductionmentioning

confidence: 99%

Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz

Schmalz¹,

Rothbart

Gluck

et al. 2021

IEEE Access

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“…Another 55-nm SiGe radar in [2] reduces the EIRP variation to 7.7 dB, but it requires the attachment of a silicon lens, and compared to [1], the achieved bandwidth and EIRP reduce to 62.4 GHz and 14 dBm, respectively. It is also noteworthy that all ultrabroadband radars demonstrated so far are based on high-speed SiGe processes (recently [3] reported a broadband frequency multiplier with 140-GHz bandwidth in 130-nm SiGe process), and low cost CMOS-based radars still operate below 200 GHz and their bandwidths are within 20 GHz. In [4], a 2×2 pulse radar array at 160 GHz is built using a 65-nm CMOS process, and in [5], a FMCW radar at 145 GHz is built using a 28nm CMOS process; they, however, only deliver bandwidths of 7 GHz and 13 GHz, respectively.…”

Section: Eirp (Dbm)mentioning

confidence: 99%

“…16. The peak multi-channelaggregated EIRP of the radar 3 (without lens) is 0.6 dBm, and it is evident that with the THz comb architecture, the fluctuation of the EIRP across the entire 100-GHz bandwidth is only 3 Although the output waves of the channels are not coherent, the multichannel aggregated EIRP is still a meaningful metric for a fair comparison with prior single-tone radars, in terms of the equivalent signal-to-noise ratio (with the same integration time), detection distance and energy efficiency. 8.8 dB.…”

Section: A Characterization Of Electrical Performancementioning

confidence: 99%

A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

Wang

Chen

et al. 2021

IEEE J. Solid-State Circuits

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This paper presents a CMOS-based, ultrabroadband FMCW (frequency-modulated continuous-wave) radar using a terahertz (THz) frequency-comb architecture. The high-parallelism spectral sensing provided by this architecture significantly reduces the bandwidth requirement for the THz front-end circuitry and ensures that the peak output power and sensitivity are maintained across the entire band of operation. The speed and linearity of frequency chirping are also improved by the comb system. An antenna-sharing scheme based on a square-mixer-first architecture is used, which not only leads to compact size, but also facilitates the stitching of the multi-channel radar IF data. To avoid the usage of high-cost silicon lens in the on-chip broadband radiation, a multi-resonance substrate-integrated-waveguide (SIW) antenna structure is innovated, which provides 15% fractional bandwidth for impedance matching. As a proof-of-concept, a five-tone radar prototype that seamlessly scan the entire 220-to-320-GHz band is demonstrated. In the measurement, the multi-channel-aggregated EIRP (equivalent isotropically-radiated power) is 0.6 dBm, and is further boosted to ∼20 dBm with a TPX (polymethylpentene) lens. The measured minimum single-sideband noise figure (SSB NF) of the receiver, including the antenna loss and baseband amplifier, is 22.8 dB. Due to the comb-architecture, the EIRP and NF values fluctuate by only 8.8 and 14.6 dB, respectively, across the 100-GHz bandwidth. The chip has a die size of 5 mm 2 and consumes 840 mW of DC power. This work marks the first CMOS demonstration of THz radar, and achieves record bandwidth and ranging resolution among all radar front-end chips.

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“…Higher operating frequencies are typically achieved by means of frequency multiplication [107], [108]. Here, a frequency octupler in SiGe with an output power above 0 dBm and a record 3-dB bandwidth even exceeding the waveguide J -band (220-325 GHz) has recently been shown [105]. The chip micrograph of said octupler is shown in Fig.…”

Section: Toward Thz Radar Transceiversmentioning

confidence: 99%

“…In principle, this allows the design of SiGe systems even above 300 GHz, but the main shortcoming is the possibility to generate gain and output power at these frequencies. Commonly used approaches use frequency multipliers driven by power amplifiers [105] or implement subharmonic mixers [175]. A more efficient but narrowband approach is the direct combination of a subharmonic oscillator with a doubler or push-push operation [109].…”

Section: A Thz Performancementioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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220–360-GHz Broadband Frequency Multiplier Chains (x8) in 130-nm BiCMOS Technology

Cited by 39 publications

References 30 publications

Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz

Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz

A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

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