22-nm-node technology active-layer patterning for planar transistor devices

Kim, Ryoung-Han; Holmes, Steven J.; Halle, Scott; Dai, Vito; Meiring, Jason; Dave, Aasutosh; Colburn, Matthew; Levinson, Harry

doi:10.1117/1.3302125

Cited by 9 publications

(3 citation statements)

References 5 publications

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“…In the Fe nanostructures, there are also angular regions with steps in all dimensions. The system with corner cuts exhibits the most stable coercive fields around a region of [5][6][7][8][9][10] • , where steps can be found in all sizes. Here, erroneous modifications of the sample dimensions or the orientation with respect to the external magnetic field cause the smallest deviations in the coercive fields.…”

Section: Discussion Of Resultsmentioning

confidence: 99%

Influence of shape and dimension on magnetic anisotropies and magnetization reversal of Py, Fe, and Co nano-objects with four-fold symmetry

Ehrmann

Błachowicz

2015

AIP Advances

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Different magnetic anisotropies and magnetization reversal mechanisms were identified in magnetic nano-objects of four-fold symmetry, using micromagnetic simulations. Nano-particles with lateral dimensions between 50 nm and 400 nm, simulated with typical properties of permalloy, iron and cobalt, were tested in dependence of the angular orientation with respect to the externally applied magnetic field. All nano-objects exhibited steps on the sides of the hysteresis loops, which can be correlated with stable intermediate states at remanence, for some angular regions. Coercive fields were found to show an irregular and unpredictable angular dependence in case of cobalt nano-particles, while this material depicted the largest number of steps in general. Comparing the angular dependence of the coercive fields with previous calculations, it was shown that usual descriptions of fourfold anisotropies are no longer valid in most of the nano-objects under examination.

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Section: Discussion Of Resultsmentioning

confidence: 99%

Influence of shape and dimension on magnetic anisotropies and magnetization reversal of Py, Fe, and Co nano-objects with four-fold symmetry

Ehrmann

Błachowicz

2015

AIP Advances

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“…It is performed by high resolution optical projection lithography as wafer stepper/scanner systems operating with 193 nm UV laser light illumination in combination with complex phase shifting masks, resolution enhancement structure, and immersion liquids between the projection lens and the resist surface. As demonstrated, the optical systems are capable for structure sizes of down to 22 nm [1] or even smaller. Nevertheless, the equipment and the phase shifting masks are extremely expensive.…”

Section: Introductionmentioning

confidence: 99%

Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology

Hilleringmann

Assion

Vidor

et al. 2015

JMMC

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Side-wall deposition and etch-back technology is a cheap method to produce nanometer scale lines and trenches or gaps without expensive equipment like high resolution lithography or chemical-mechanical polishing. It can be used for gratings in integrated optics and in semiconductor technology for electronic device integration. This paper reflects its application for field effect transistors in bulk silicon and demonstrates its potential for nanometer scale particle transistor integration. Silicon and ZnO nanoparticle field effect transistors using different setup structures integrated by side-wall deposition and etchback show on/off ratios of up to 4500 and mobilities up to some cm 2 V −1 s −1. Although the best structures apply high temperature processing, a reduced temperature process for ZnO nanoparticle transistor integration on glass and foil substrates is presented.

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“…[13][14][15][16] Essentially, all efforts to extend the 193i systems are now in enabling lower k 1 factor. These techniques are generally known as optical proximity correction (OPC), which are continually evolving and standard practice in production solutions.…”

Section: Introductionmentioning

confidence: 99%

Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

Melville¹,

Rosenbluth²,

Waechter³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Articles you may be interested inAnalysis and optimization approaches for wide-viewing-angle λ/4 plate in polarimetry for immersion lithographyIn the recent past, scaling of semiconductor fabrication systems has been dominated by wavelength and numerical aperture modifications. This is now no longer the case for 193-nm immersion projection lithography (193i) systems as there are no technical paths for continued benefit from the in these areas. Instead, a range of techniques including patterning processes and system optimization are being used to push the limits of the system. This paper will review the elements that are now driving scaling for a system of fixed wavelength and numerical aperture.

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22-nm-node technology active-layer patterning for planar transistor devices

Cited by 9 publications

References 5 publications

Influence of shape and dimension on magnetic anisotropies and magnetization reversal of Py, Fe, and Co nano-objects with four-fold symmetry

Influence of shape and dimension on magnetic anisotropies and magnetization reversal of Py, Fe, and Co nano-objects with four-fold symmetry

Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology

Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

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