22.8% full-area bifacial n-PERT solar cells with rear side sputtered poly-Si(n) passivating contact

Ingenito, Andrea; Allebé, Christophe; Libraro, Sofia; Ballif, Christophe; Paviet‐Salomon, Bertrand; Nicolay, Sylvain; León, Juan J. Díaz

doi:10.1016/j.solmat.2022.112043

Cited by 10 publications

(3 citation statements)

References 20 publications

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“…The doped poly-Si is typically crystallized from an amorphous silicon layer (a-Si) after a high-temperature heat treatment process. Normally, the desired a-Si layer can be prepared using methods such as plasma-enhanced chemical vapor deposition (PECVD) [ 7 , 8 ], low-pressure CVD (LPCVD) [ 9 , 10 ], atmospheric pressure CVD [ 11 ], hot wire CVD [ 12 ], sputtering [ 13 , 14 ], and electron beam evaporation [ 15 ]. Published studies focused on poly-Si passivating contacts fabricated using the standard industrial approach based on LPCVD and ex situ phosphorus (P) doping.…”

Section: Introductionmentioning

confidence: 99%

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

Wang,

Gao,

et al. 2024

Materials

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Thin polysilicon (poly-Si)-based passivating contacts can reduce parasitic absorption and the cost of n-TOPCon solar cells. Herein, n+-poly-Si layers with thicknesses of 30~100 nm were fabricated by low-pressure chemical vapor deposition (LPCVD) to create passivating contacts. We investigated the effect of n+-poly-Si layer thickness on the microstructure of the metallization contact formation, passivation, and electronic performance of n-TOPCon solar cells. The thickness of the poly-Si layer significantly affected the passivation of metallization-induced recombination under the metal contact (J0,metal) and the contact resistivity (ρc) of the cells. However, it had a minimal impact on the short-circuit current density (Jsc), which was primarily associated with corroded silver (Ag) at depths of the n+-poly-Si layer exceeding 40 nm. We introduced a thin n+-poly-Si layer with a thickness of 70 nm and a surface concentration of 5 × 1020 atoms/cm3. This layer can meet the requirements for low J0,metal and ρc values, leading to an increase in conversion efficiency of 25.65%. This optimized process of depositing a phosphorus-doped poly-Si layer can be commercially applied in photovoltaics to reduce processing times and lower costs.

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Section: Introductionmentioning

confidence: 99%

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

Wang,

Gao,

et al. 2024

Materials

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“…There have only been a few reports on the fabrication of TOPCon structures using the sputtering technique. 14,15) Therefore, it is important to intensively investigate the application of the sputtering technique for the fabrication of TOPCon structures.…”

Section: Introductionmentioning

confidence: 99%

Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

Yamaguchi

Miyajima

2023

Jpn. J. Appl. Phys.

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Tunnel oxide passivated contact (TOPCon) structures using highly doped n-type polycrystalline silicon (poly-Si) were fabricated by using facing target sputtering and ion implantation techniques for SiH4 free fabrication process of high efficiency silicon solar cells. We investigated structural and electrical properties of the highly doped n-type poly-Si layers to optimize the ion implantation process. We also investigated the surface passivation quality of our TOPCon structure. Effective carrier lifetime of 2.01 ms and implied open circuit voltage of 704 mV was obtained for our sample annealed at 950 °C. The sample also shows low contact resistance of 3.22×10-3 Ωcm-2. Our results open the way for SiH4 free fabrication process of silicon solar cell using TOPCon structure.

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“…New developments in the open metallization grid, texturized wafers, and passivizing anti-reflective at industrial production scales 15 , 16 , 17 have led to the development of highly efficient bifacial PV cells. 18 Like all newly inducted technologies, the acceptance of bifacial PV technology in the photovoltaic market is currently facing a critical challenge due to the bifacial PV production uncertainties and inadequate performance data of modules. 19 The faster pace of research, more installations, and good bifacial PV performance, even at low albedo conditions, have led to speedier induction bifacial technology in Nordic countries at altitudes above 65° 11 , 20 and USA.…”

Section: Introductionmentioning

confidence: 99%

Resource potential mapping of bifacial photovoltaic systems in India

Johnson,

Manikandan

2023

iScience

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22.8% full-area bifacial n-PERT solar cells with rear side sputtered poly-Si(n) passivating contact

Cited by 10 publications

References 20 publications

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

Effects on Metallization of n+-Poly-Si Layer for N-Type Tunnel Oxide Passivated Contact Solar Cells

Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

Resource potential mapping of bifacial photovoltaic systems in India

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