21704 ULSI metallization using supercritical carbon dioxide : development of a "full fluid"-type processor

Kondoh, Eiichi; Hirose, M.; Aruga, S.

doi:10.1299/jsmekanto.2007.13.223

Cited by 1 publication

(2 citation statements)

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“…For the measurement of size and size variation of nanostructures, ellipsometric porosimetry was employed. 2,[5][6][7][8][9][10] Each sample was loaded into a closed chamber equipped with two optical windows made of fused silica, a highvacuum pumping system, and a vapor inlet system. A spectroscopic ellipsometer was used to determine d and n of the film as functions of the heptane vapor pressure (p) in the sample chamber.…”

Section: Methodsmentioning

confidence: 99%

“…On the other hand, in order to put the developed technology to practical use, waferlevel integration of nanodevices, as well as wafer-level evaluation of variability will be necessary. 3,4) Wafer-level evaluation of nanostructure size is possible by ellipsometric porosimetry 2,[5][6][7][8][9][10] as well as by X-ray techniques. 2,[11][12][13][14] In this study, we took advantage of a wafer-level evaluation technique of nanostructures and applied it to a series of samples with nanostructures to demonstrate its effectiveness in revealing the dependences of their size and size variation on sample preparation conditions.…”

Section: Introductionmentioning

confidence: 99%

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Characterization and Control of Nanostructure Size Variation

Hata¹,

Akinaga²

2012

Jpn. J. Appl. Phys.

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Results from the characterization of the size variation of nanostructures in a series of thin films prepared by varying a component fraction in the precursor solution are reported and discussed in terms of the physics and chemistry behind the variation. Changes in the refractive index and thickness upon vapor adsorption were used to calculate the adsorbed volume as a function of vapor pressure and then analyzed to obtain size, size variation, and total volume of nanostructures in the films. With an increasing amount of dimethyldiethoxysilane (DMDEOS) in precursor solution, the condensation polymerization reaction proceeded to decrease the silanol group concentration, increasing the ≡Si–O–Si≡ network connectivity number (m) and Young's modulus (E) of the resultant film. With further increase of the DMDEOS concentration, the methyl group concentration in film was increased with decreasing m and E. It was demonstrated that the experimentally observed dependence of the nanostructure size variation reflects the physics and chemistry behind the preparation processes, and provides a good insight into a strategy for minimizing the variability.

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