2019
DOI: 10.1039/c8ta11841h
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21.7% efficiency achieved in planar n–i–p perovskite solar cells via interface engineering with water-soluble 2D TiS2

Abstract: In planar n–i–p perovskite solar cells (Pero-SCs), interfacial engineering plays a critically important role in charge extraction and transportation, and hence influences the photovoltaic performances.

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Cited by 98 publications
(96 citation statements)
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“…To explain the improvement in V OC , space charge limited current (SCLC) (Figure S4, Supporting Information) was carried out to calculate the trap densities ( N t ) of devices. The N t is calculated using the following equation: Nnormalt=2εε0VTFLeL2 where ε (=35) is the relative dielectric constant, ε 0 (= 8.854 × 10 −12 F m −1 ) is the vacuum permittivity, V TFL is the trap‐filled voltage, e is the elementary charge (1.6 × 10 −19 C), and L (average size = 320 nm estimated from cross‐sectional SEM images) is the thickness of the perovskite film. According to Figure S4, Supporting Information, the V TFL s of devices based on PTAA and PSBMA@PTAA are 0.5 and 0.2 V, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…To explain the improvement in V OC , space charge limited current (SCLC) (Figure S4, Supporting Information) was carried out to calculate the trap densities ( N t ) of devices. The N t is calculated using the following equation: Nnormalt=2εε0VTFLeL2 where ε (=35) is the relative dielectric constant, ε 0 (= 8.854 × 10 −12 F m −1 ) is the vacuum permittivity, V TFL is the trap‐filled voltage, e is the elementary charge (1.6 × 10 −19 C), and L (average size = 320 nm estimated from cross‐sectional SEM images) is the thickness of the perovskite film. According to Figure S4, Supporting Information, the V TFL s of devices based on PTAA and PSBMA@PTAA are 0.5 and 0.2 V, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Device schematic with HTM is shown in Figure S1b. 7,8 The cross-sectional SEM image of devices with 2,6PyDANCBZ and 3,5PyDANCBZ (Figure 5a and 5b) showed Rs and Rsh of 41.0 Ω and 12.2 kΩ, respectively. Subsequently, 2,6PyDANCBZ yielded improved PCE with high FF, which is due to the lower Rs and higher Rsh.…”
Section: Device Performancementioning
confidence: 99%
“…6 The HTMs play pivotal roles in facilitating holes extraction and transportation, and help to retard the degradation of PSCs induced by H2O and oxygen. [7][8][9][10] Currently, 2,2´,7,7´-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9´-spirobifluorene (Spiro-OMeTAD) is the most investigated HTM for PSCs fabrication due to its optimized recipe, ease of implementation to fabricate high performance devices. Kim and Seok et.al…”
Section: Introductionmentioning
confidence: 99%
“…b) Transient PL spectra of SnO 2 and SnO 2 /2D TiS 2 as ETLs in PSCs. Reproduced with permission . Copyright 2019, The Royal Society of Chemistry.…”
Section: Emerging 2d Materials In Pscsmentioning
confidence: 99%