20W GaN HPAs for Next Generation X-Band T/R-Modules

Schuh, Patrick; Leberer, R.; Sledzik, H.; Oppermann, Martin; Adelseck, B.; Brugger, H.; Behtash, R.; Leier, H.; Quay, R.

doi:10.1109/mwsym.2006.249736

Cited by 24 publications

(8 citation statements)

References 4 publications

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“…With the chip size as small as 2.2mm 2 , the output power per unit area reaches 6.68 W/mm 2 . Compared with reported results of X-band AlGaN/GaN HEMT power MMICs up to date [1][2][3][4], this work shows superiority in output power per millimeter gate width and output power per unit chip size. Fig.8 Pulsed output power as a function of frequency at different input power levels when the MMIC is operated at 30V, Pout exceeds 40dBm over the band of 9-11GHz.…”

Section: Resultsmentioning

confidence: 48%

“…Power monolithic microwave integrated circuit (MMIC) is a very important kind of solid-state microwave power device for its small chip size, high uniformity, high power gain and high reliability. AlGaN/GaN HEMT MMICs have been receiving a rapidly growing interest in the research community [1][2][3][4]. Microstrip technology [1] [3][4] and coplanar wave guide (CPW) technology [2] are commonly used in design of power MMICs.…”

Section: Introductionmentioning

confidence: 99%

“…AlGaN/GaN HEMT MMICs have been receiving a rapidly growing interest in the research community [1][2][3][4]. Microstrip technology [1] [3][4] and coplanar wave guide (CPW) technology [2] are commonly used in design of power MMICs. Compared with CPW technology, microstrip technology which is widely used in design of GaAs power MMICs demonstrates superiority in AlGaN/GaN HEMT MMICs design with much smaller chip size and simpler RF grounding schemes.…”

Section: Introductionmentioning

confidence: 99%

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X-Band Microstrip AlGaN/GaN HEMT Power MMICs

Chen

Zhang

Ren

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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X-Band AlGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is presented in this paper. Recessed-gate and field-plate are used in the device process to improve the AlGaN/GaN HEMTs performances. S-parameter measurements show a strong dependence of the frequency performances of the AlGaN/GaN HEMTs on the operating voltage. Higher operating voltage is key to get higher power gain for the AlGaN/GaN HEMTs. The developed 2-stage power MMIC delivers a pulsed output power in excess of 10W at a drain bias of 30V with a power gain of more than 12dB over the band of 9-11GHz. Peak output power inside the band reaches 14.7W with a power gain of 13.7dB and a power-addedefficiency (PAE) of 23%. The MMIC chip size is only 2.0mm×1.1mm. This work shows superiority over reported results of X-band AlGaN/GaN HEMT power MMICs up to date in output power per millimeter gate width and output power per unit chip size. Index Terms-X-band; AlGaN/GaN; HEMTs; Microstrip; Power MMIC I.

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Section: Resultsmentioning

confidence: 48%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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X-Band Microstrip AlGaN/GaN HEMT Power MMICs

Chen

Zhang

Ren

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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“…Both properties can be improved using GaN technology [2][3][4]. With the GaN technology, high power amplifiers (HPAs) with higher output power compared to GaAs monolithically integrated circuits (MMICs) are already demonstrated [5][6][7]. Based on such MMICs the first T/R module demonstrators are realized [8,9].…”

Section: Introductionmentioning

confidence: 99%

GaN-based amplifiers for wideband applications

Schuh¹,

Sledzik²,

Reber³

et al. 2010

Int. j. microw. wirel. technol.

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Different wideband amplifiers, hybrid designs at lower frequencies, and monolithically integrated circuits (MMIC) at higher frequencies were designed, fabricated, and measured. These amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of amplifiers are mainly electronic warfare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for wideband high power amplifiers. The second application also needs high robust low noise amplifiers for its receive path. Output power levels of 38 W for hybrid amplifiers at lower frequencies up to 6 GHz and 15 W for the MMIC power amplifiers at higher frequencies are measured. With these building blocks, novel EW system approaches can be investigated

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“…Many of these are of class A or AB type (e.g. [1] [2]) and hence inherently narrow band because of several reasons: First, in order to deliver high power values, large transistors have to be used, which limits the upper frequency limit of operation. Second, because of the high parasitic capacitances of the transistor, one has to use highly reactive and thus very narrow-band matching circuits.…”

Section: Introductionmentioning

confidence: 99%

A non-uniform GaN power TWA for 2 to 10 GHz suitable for square-wave operation

Meliani

Ersoy

Chaturvedi

et al. 2009

2009 IEEE Radio Frequency Integrated Circuits Symposium

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A broadband GaN monolithic power amplifier covering the 2 to 10 GHz band is presented. It is based on a nonuniform traveling-wave architecture using 4 transistor cells with 4x125 µ µ µ µm gate width each. The amplifier achieves 7 to 11 dB small signal gain in the frequency band between 2 and 10 GHz. The circuit delivers between 2.5 and 4.5 W over the bandwidth from 2 GHz up to 10 GHz. At maximum output power a PAE higher than 20% is achieved. In addition, large signal operation with square wave signals have been demonstrated at 1 and 2 Gbps, with 5 W output power at 1 Gbps.

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20W GaN HPAs for Next Generation X-Band T/R-Modules

Cited by 24 publications

References 4 publications

X-Band Microstrip AlGaN/GaN HEMT Power MMICs

X-Band Microstrip AlGaN/GaN HEMT Power MMICs

GaN-based amplifiers for wideband applications

A non-uniform GaN power TWA for 2 to 10 GHz suitable for square-wave operation

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