2019 Index IEEE Journal of the Electron Devices Society Vol. 7

Fabrication of a wider bandgap θ-Al2O3 by oxidation of ultrathin AlN films for leakage current reduction

“…During the write operation, a positive voltage is applied to the control gate and electrons are injected from the poly-Si channel to the charge trap through the tunneling oxide layer. 5) During the erase operation, a positive voltage is applied to the poly-Si channel, from which holes are injected into the charge trap. 5) However, if a high erase voltage is applied during the erase operations, undesirable electrons penetrate the blocking oxide layer into the charge trap and cancel the hole injection.…”

“…5) During the erase operation, a positive voltage is applied to the poly-Si channel, from which holes are injected into the charge trap. 5) However, if a high erase voltage is applied during the erase operations, undesirable electrons penetrate the blocking oxide layer into the charge trap and cancel the hole injection. 6) Therefore, to improve the efficiency of the erase operation, the blocking oxide layer should suppress the leakage current.…”