20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage

Wide-bandwidth lasers and modulators for RF photonics

“…Quaternary alloys such as InGaAsP and InGaAlAs can be grown lattice matched to InP and make it possible to change the bandgap energy and well thickness independently [19], [20]. Thick QW's up to 12 nm have been reported in InGaAsP/ InGaAsP MQW, resulting in drive voltages as low as 1.2 V [19].…”

“…Quaternary alloys such as InGaAsP and InGaAlAs can be grown lattice matched to InP and make it possible to change the bandgap energy and well thickness independently [19], [20]. Thick QW's up to 12 nm have been reported in InGaAsP/ InGaAsP MQW, resulting in drive voltages as low as 1.2 V [19]. Similarly, InGaAlAs/InAlAs MQW's with well widths as large as 19.6 nm yielded very low voltage EA modulators at 1.55 m, requiring about 1 V for 10-dB on/off ratio [21].…”

High performance polarization insensitive electroabsorption modulator based on strained GaInAs–AlInAs multiple quantum wells

“…1 Electroabsorption ͑EA͒ modulators based on III-V semiconductor multiquantum wells ͑MQW͒ are promising candidates for a variety of long haul, high bit rate telecommunication applications because they feature large absorption variations at low driving voltages. 2 However, conventional MQW EA modulators present a strong polarization dependence, mainly due to the confinement splitting of the light-and heavy-hole levels and the related optical selection rules in quantum wells. Indeed, for unstrained MQW, the fundamental band gap in the TE mode is associated with the heavy hole to electron ͑H-E͒ transition, whereas in the TM mode, the light-hole to electron ͑L-E͒ transition is the only contribution to absorption.…”

Chirped Bloch oscillations in strain-balanced InGaAs/InGaAs superlattices

“…as electro-optic modulators [1]. This relevance originates from the possibility of tuning the wavelength of excitonic optical transitions to 1.55 µm by varying the compound fractions in the wells and barriers [2].…”