20% Efficient Screen-Printed Cells With Spin-On-Dielectric-Passivated Boron Back-Surface Field

Das, Arnab; Meemongkolkiat, Vichai; Kim, D; Ramanathan, S.; Rohatgi, A.

doi:10.1109/ted.2010.2057010

Cited by 14 publications

(10 citation statements)

References 18 publications

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“…Células solares com 20% de eficiência, com BSF de boro, foram obtidas no trabalho desenvolvido por Das et al [11], no qual foi realizada a formação de uma camada dielétrica de SiO 2 , por spin-on, que realiza tanto gettering de impurezas indesejadas quanto a passivação de superfície em uma única etapa térmica. Alta densidade superficial de cargas elétricas, da ordem de 10 3 cm -2…”

Section: Influência Da Passivação Em Células Solares De Silício Com Cunclassified

“…, foi encontrada o que explica a qualidade da passivação na superfície [11]. Yang et al [12] analisaram a influência da passivação formada por uma camada de SiO 2 /a-Si:H em células solares IBC (interdigitated back contact) base n com dopagem a laser nas regiões p + e n + e obtiveram a eficiência de 23% em lâminas de Si crescido por fusão zonal flutuante (Si-FZ).…”

Section: Influência Da Passivação Em Células Solares De Silício Com Cunclassified

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Influência Da Passivação Em Células Solares De Silício Com Campo Retrodifusor Seletivo De Alumínio E Boro

Crestani¹,

Zanesco²,

Moehlecke³

2017

Tecnologia Em Metalurgia Materiais E Mineração

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ResumoO campo retrodifusor seletivo em células solares processadas em lâminas de silício tipo p possibilita aumentar a eficiência, ao mesmo tempo em que evita o abaulamento, típico em células solares com campo retrodifusor homogêneo formado por pasta de alumínio. O objetivo deste trabalho é analisar a influência da passivação com SiO 2 no emissor de fósforo e no campo retrodifusor seletivo de alumínio e boro de células solares n + pp + processadas em lâminas de silício Czochralski tipo p, grau solar. O campo retrodifusor seletivo foi formado pela difusão de boro em toda a face posterior da lâmina de silício e por serigrafia foi depositada a pasta de alumínio, somente nas trilhas metálicas. Para a temperatura de difusão de boro (T B ) de 950°C, observou-se que a passivação resultou em um aumento da eficiência devido ao aumento da tensão de circuito aberto e que a passivação somente foi eficaz no emissor n + . Para a T B de 970°C, as células solares com passivação alcançaram a eficiência de 16,0%, devido ao aumento no fator de forma e a passivação foi eficaz na região p + dopada com boro e no emissor de fósforo. Palavras-chave: Células solares; Campo retrodifusor seletivo; Passivação. INFLUENCE OF THE PASSIVATION IN SILICON CELLS SOLAR WITH SELECTIVE BACK SURFACE FIELD OF ALUMINIUM AND BORON AbstractThe selective back surface field in solar cells processed in p-type silicon wafers enables the increasing of the efficiency and avoids the typical bowing in solar cells with homogeneous back surface field formed by aluminum paste. The goal of this paper is to analyze the influence of passivation with SiO 2 in the phosphorus emitter and in the selective back surface field of aluminum and boron of n + pp + solar cells processed in p-type Czochralski silicon wafers, solar grade. The selective back surface field was formed by boron diffusion in whole rear face of the silicon wafer and the aluminum paste was deposited by screen printing to form the metal grid and the selective emitter. Solar cells were processed with boron diffusion temperature (T B ) of 950°C. The passivation enhanced the efficiency due to the increase of the open circuit voltage and the passivation is effective only in the emitter. The solar cells produced with T B of 970°C and passivation achieved the efficiency of 16.0%, due to the increasing of the fill factor. Analyzing these devices, we also concluded that the passivation was effective in the p + region, doped with boron, as well as in the phosphorus emitter. Keywords: Solar cells; Selective BSF; Passivation. INTRODUÇÃOAs células solares fabricadas em lâminas de silício cristalino tipo p dominam o mercado mundial. As células típicas da indústria possuem uma junção pn em uma das faces e na outra face é formado o campo retrodifusor, também denominado de BSF (back surface field), que tem a função de diminuir a recombinação em superfície na face posterior da célula solar e, consequentemente, aumentar a tensão de circuito aberto e a corrente de curto-circuito [1]. Simulações mostraram que em células solar...

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Section: Influência Da Passivação Em Células Solares De Silício Com Cunclassified

Influência Da Passivação Em Células Solares De Silício Com Campo Retrodifusor Seletivo De Alumínio E Boro

Crestani¹,

Zanesco²,

Moehlecke³

2017

Tecnologia Em Metalurgia Materiais E Mineração

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“…1): a 1.5 Ω-cm (Nbase=10 16 cm -3 ), 180 µm thick boron-doped p-type base with a full-area boron back-surface field (B-BSF) modeled by a Gaussian function with a peak doping of 6×10 -19 cm -3 and a junction depth of 1 µm [4], a textured front surface with a 70 nm thick silicon nitride anti-reflective coating layer, a front contact grid finger 100 µm wide with length and thickness of Lm=3 cm and Hm=12 µm, respectively. The metal resistivity is ρm=6×10 -6 Ω-cm.…”

Section: Simulation Setupmentioning

confidence: 99%

2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance

Rose

Zanuccoli

Magnone

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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Two-dimensional (2-D) numerical simulations have been performed to investigate the impact of the doping profile in the metal-contacted highly-doped regions for c-Si selective emitter (SE) solar cells. Numerical results show that the doping profile under the metallization significantly influences the recombination effects on the front-side of the SE cell and consequently its performance. A strong impact on the short-circuit current density of the solar cell has been seen. This is mainly due to the inclusion of large alignment tolerances used in the SE diffusion for the subsequent metallization process, leading to broad highlydoped areas. In this regard, a quantitative analysis of this effect has been carried out. The results reveal that an improved alignment, allowing a reduction of the alignment tolerances, leads to a wider process window of doping profiles and hence better SE cell performance.

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“…Screen-printing aluminum alloying process is used for full or local p+BSF formation on p-type crystalline silicon solar cells [3,4]. Because obtaining high concentration when forming a p+BSF is important for high efficiency solar cells [5,6], low solubility of aluminum (at level of 10 18 atoms/cm 3 ) in crystalline silicon is the main limitation for achieving high penetrating ratio [7,8]. Boron doping, on the other hand, found to be an effective solution to achieve densely doped p+BSFs (at level of 10 19 atoms/cm 3 ) [9].…”

Section: Introductionmentioning

confidence: 99%

“…Boron doping, on the other hand, found to be an effective solution to achieve densely doped p+BSFs (at level of 10 19 atoms/cm 3 ) [9]. However, the need of high temperature processing (>950°C) and high cost make it difficult to use boron diffused p+back surface fields for industrial silicon solar cells [5,10]. As a feasible solution to achieve high penetrating ratio while processing the wafers at around common firing temperatures (∼850°C) with low cost, aluminum pastes with a small percentage of boron concentration were introduced [6,9,11,12].…”

Section: Introductionmentioning

confidence: 99%

Development of aluminum paste with/without boron content for crystalline silicon solar cells

Üzüm¹,

Ashikaga²,

Noguchi³

et al. 2020

Mater. Res. Express

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Improvement of aluminum alloyed p+back surface fields (p+BSF) which is an essential requirement for achieving high efficiency silicon solar cells has been an important task. One of the ways to have better quality BSFs can be to introduce screen printable aluminum pastes with boron content. Two type of pastes were developed in this work and recipes were provided in detail: screenprintable aluminum paste without boron content (B-free-Al-paste), screen-printable aluminum paste with boron content (Al-B-paste). The ingredients of the pastes were optimized and basically evaluated in terms of alloying and impurity characteristics by measurement of sheet resistances, carrier lifetimes and SIMS analysis. Carrier lifetimes of the wafers processed by Al-B-paste maintained at around 300 μs relatively higher than the wafers processed by B-free-Al-paste. P-type silicon solar cells were fabricated using developed pastes and were compared with those of the cells fabricated by commercial aluminum pastes. Best efficiency of 17.8% was achieved with totally vacuum-less cell production process and Suns-Voc analysis were also carried out for fabricated solar cells.

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20% Efficient Screen-Printed Cells With Spin-On-Dielectric-Passivated Boron Back-Surface Field

Cited by 14 publications

References 18 publications

Influência Da Passivação Em Células Solares De Silício Com Campo Retrodifusor Seletivo De Alumínio E Boro

Influência Da Passivação Em Células Solares De Silício Com Campo Retrodifusor Seletivo De Alumínio E Boro

2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance

Development of aluminum paste with/without boron content for crystalline silicon solar cells

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