20.5% Efficiency on Large Area N-type PERT Cells by Ion Implantation

Lanterne, Adeline; Perchec, Jérôme Le; Gall, S.; Coig, Marianne; Tauzin, A.; Veschetti, Y.

doi:10.1016/j.egypro.2014.08.006

Cited by 14 publications

(8 citation statements)

References 8 publications

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“…The last two emitters were implanted by B + ions on a beam‐line implantation tool with an implantation dose named dose A, which is well suited for high‐efficiency bifacial cells . This implantation dose was increased by a factor of 1.7 on the textured wafers; this factor characterizes the increase of the surface area between polished and textured wafers.…”

Section: Methodsmentioning

confidence: 99%

“…An incidence angle of 7° is applied to the ion beam to avoid channeling effect. More details on cell fabrication used here are discussed in Reference . A silicon oxide (SiO 2 ) layer was also grown on these emitters by adding an oxidation step during the activation annealing in the “950°C” annealed emitter and after the annealing in the “1050°C” case.…”

Section: Methodsmentioning

confidence: 99%

“…As secondary ion mass spectroscopy (SIMS) cannot be used for textured surface, we make use of APT to measure location‐specific B concentration depth profile on textured Si emitters and to possibly detect B clusters that may degrade solar cell performances. Here, the study is focused on emitter quality of Si solar cells, complete cell measurements being available in Reference .…”

Section: Introductionmentioning

confidence: 99%

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Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study

Raghuwanshi

Lanterne

Perchec

et al. 2015

Progress in Photovoltaics

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The use of ion implantation doping instead of the standard gaseous diffusion is a promising way to simplify the fabrication process of silicon solar cells. However, difficulties to form high-quality boron (B) implanted emitters are encountered when implantation doses suitable for the emitter formation are used. This is due to a more or less complete activation of Boron after thermal annealing. To have a better insight into the actual state of the B distributions, we analyze three different B emitters prepared on textured Si wafers: (1) a BCl 3 diffused emitter and two B implanted emitters (fixed dose) annealed at (2) 950°C and at (3) 1050°C (less than an hour). Our investigations are in particular based on atom probe tomography, a technique able to explore 3D atomic distribution inside a material at nanometer scale. Atom probe tomography is employed here to characterize B atomic distribution inside textured Si solar cell emitters and to quantify clustering of B atoms. Here, we show that implanted emitters annealed at 950°C present maximum clusters due to poor solubility at lower temperature and also highest emitter saturation current density (J 0e = 1000 fA/cm 2 ). Increasing the annealing temperature results in greatly improved J 0e (131 fA/cm 2 ) due to higher solubility and a consequently lower number of clusters. BCl 3 diffused emitters do not contain any B clusters and presented the best emitter quality. From our results, we conclude that clustering of B atoms is the main reason behind higher J 0e in the implanted boron emitters and hence degraded emitter quality.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study

Raghuwanshi

Lanterne

Perchec

et al. 2015

Progress in Photovoltaics

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“…A 100 nm thick is required whereas the combination of a very thin layer of SiO 2 and plasma enhanced chemical vapour deposition (PECVD) SiN film appears as a promising candidate [5,6,7]. A SiN layer deposited onto thin SiO 2 constitutes an efficient stack for emitter surface passivation [8,9,10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of rapid thermal oxide/ silicon nitride passivation stack of n+ emitter

Amrani

Kaddour

Maoudj

et al. 2015

Current Applied Physics

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“…Modeled structure for InGaN/Si 2-terminal tandem cell. Top cell structure is based on the work of reference [15], and bottom cell structure is based on the work of reference [23].…”

Section: Tj Bottom Cellmentioning

confidence: 99%

Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

et al. 2017

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Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell.

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20.5% Efficiency on Large Area N-type PERT Cells by Ion Implantation

Cited by 14 publications

References 8 publications

Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study

Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study

Investigation of rapid thermal oxide/ silicon nitride passivation stack of n+ emitter

Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

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