2 W∕mm output power density at 1 GHz for diamond FETs

Kasu, Makoto; Ueda, Ken–ichi; Ye, Haitao; Yamauchi, Y.; Sasaki, Satoshi; Makimōto, Toshiki

doi:10.1049/el:20053194

Cited by 138 publications

(55 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 4 shows the results of a power sweep of the FET with L G of 0.1 µm made of the high-purity homoepitaxial single-crystal diamond film. The output power den- sity (P OUT ) of 2.1 W/mm at 1 GHz was extracted [7]. Recently a similar value (2.14 W/mm) was reported by Hirama et al [8] Even though the diamond FET device has a simple device configuration, the P OUT value is two times higher than that of the GaAs MES (Metal-Semiconductor) FETs widely used at present.…”

Section: Rf Power Diamond Fetssupporting

confidence: 53%

Diamond RF FETs and other approaches to electronics

Kasu

Ueda

Kageshima

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Diamond semiconductor possesses exceptional physical properties, such as high thermal conductivity, high breakdown field, and high mobility, and is therefore expected to offer the highest performance among semiconductors as high‐frequency, high‐power transistors. At present the most critical issue in achieving diamond transistors is the lack of an n‐type or p‐type dopant with low activation energy. This paper reviews approaches towards electronic‐device application of diamond done mainly by NTT Basic Research Laboratories. First it describes our diamond field‐effect transistors with 0.1‐μm gate length, which exhibit high cut‐off frequencies for the current and power gains, fT and fMAX, of 45 GHz and of 120 GHz, and output power density of 2.1 W/mm at 1 GHz. Next it shows how doping efficiency in ion implantation can be improved by using high‐pressure high‐temperature annealing. Finally, it describes our concept of diamond/nitride heterostructure and presents results that confirm its feasibility. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Rf Power Diamond Fetssupporting

confidence: 53%

Diamond RF FETs and other approaches to electronics

Kasu

Ueda

Kageshima

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…7 However, the stability of this atmospheric layer upon which the transfer doping process relies has been a significant limiting factor in the production of high-power handling and robust operation devices, with a maximum high power operation of 2 W/mm at 1 GHz reported thus far. 8 In recent studies, substitution of the surface atmospheric layer with solid-state surface acceptors for efficient surface transfer doping of H-diamond has been actively pursued. 2 The fullerene molecule C 60 9 and its fluorinated variants C 60 15 achieving higher temperature operation.…”

mentioning

confidence: 99%

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Crawford

Cao

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0x1012 to 1.8x1013cm2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping

show abstract

“…[1][2][3] Recently, encouraging progress, such as high cut-off frequency, has been achieved in diamond field-effect transistors (FETs) by using two-dimensional hole gas based on the ptype hydrogenated-terminated diamond surface. [4][5][6][7][8][9] Among the diamond FETs, metal-oxidesemiconductor FETs (MOSFETs) have been attracting growing interest because of the higher power handling capability. 10 For example, a high drain current density above 1 A/mm has been reported.…”

Section: International Center For Materials Nanoarchitectonics (Mana)mentioning

confidence: 99%

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Liao

Liu

Sang

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al 2 O 3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect.By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed. a)

show abstract

2 W∕mm output power density at 1 GHz for diamond FETs

Cited by 138 publications

References 6 publications

Diamond RF FETs and other approaches to electronics

Diamond RF FETs and other approaches to electronics

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Contact Info

Product

Resources

About