2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

Analysis of the row grounding technique in a memristor‐based crossbar array

“…In larger crossbars, the greater number of sneak paths makes it even more difficult to distinguish between the stored values. Various techniques have been proposed to reduce the sneak path effect, including multistage reading, diode gating, and transistor gating [22,[27][28][29]. In this paper, we focus on the row grounding technique, where unselected rows are grounded, as shown in Figure 2.…”

Design challenges for prototypical and emerging memory concepts relying on resistance switching

“…6b) at each resistively switching cell, depending on the resisting properties and the array size. Samsung Company already demonstrated a "non-CMOS" solution with a two-layer architecture based on 1D/1R memory cells associating a diode with a nickel oxide-based resistive element exhibiting unipolar switching [35]. Such a crossbar memory matrix was easily designed with the help of BL and WL to access each cell individually.…”

Temperature induced complementary switching in titanium oxide resistive random access memory

“…Two-terminal RRAM structure allow its integration in crossbar arrays, by accessing each memory cell through the selection of a word-line and a bit-line. 1,4 Small device size of 4F 2 and the availability of 3-D architecture solutions in a crossbar array, 10 make RRAM a promising competitor of flash NAND device. On the contrary, select device, used to avert the sneak-path current of unselected cells in low resistance state (LRS), is one of the main challenge for getting high-density RRAM crossbar arrays.…”

“…On the contrary, select device, used to avert the sneak-path current of unselected cells in low resistance state (LRS), is one of the main challenge for getting high-density RRAM crossbar arrays. 4,11 To resolve this concern, several approaches like, threshold switches, 12 oxide diodes, 4 and self-rectifying RRAM 13 have been proposed. Recently, complementary resistive switch was attracted renewed interest for coding the logic bit in two different reset (high resistance) states to resolve the sneak-path issue, without using any select devices.…”

“…Among the several emerging memory, resistive random access memory (RRAM) based on the resistive switching (RS) effect taking place in metal-insulator-metal (MIM) cells, has attracted renowned interests as a promising next generation nonvolatile memory owing to its simple constituents, high speed operation, nondestructive readout, low operation voltage, long retention time, and high scalability. [1][2][3][4][5][6][7] Binary transition metal oxides, such as SiO 2 , HfO 2 , TiO 2 , NiO, ZnO, Ta 2 O 5 , etc., [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] has been intensively investigated as an active layers in RRAM application, for their big advantage, like crystal structure and stoichiometry are more easily controlled than perovskite oxides that consist of more than three components. Two-terminal RRAM structure allow its integration in crossbar arrays, by accessing each memory cell through the selection of a word-line and a bit-line.…”