2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

Rafı́, J.M.; Campabadal, F.; Ohyama, H.; Takakura, K.; Tsunoda, Isao; Zabala, M.; Beldarrain, O.; González, M.B.; García, Héctor; Castán, Helena; Gómez, Alfonso; Dueñas, S.

doi:10.1016/j.sse.2012.06.011

Cited by 23 publications

(24 citation statements)

References 56 publications

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“…However, much less is known about their behaviour in radiation environments. Different works have been published on radiation effects on a limited number of high-k dielectrics, with Al2O3 amongst them [19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

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The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2Ogrown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and nonirradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100ºC and 200ºC and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

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Section: Introductionmentioning

confidence: 99%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

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“…3 Other work have reported the radiation-hardness of ALD grown Al2O3 and HfO2 films to 2 MeV electrons up to fluencies of 10 16 e/cm 2 by investigating shifts in hysteresis and trapped charge densities. 15 In addition to the radiation behavior, the thermal stability of ALD dielectrics has been investigated. This is important as thermal degradation of the ALD dielectric layers can result in increase of leakage currents due to additional grain boundaries forming in the bulk of the dielectric.…”

Section: Introductionmentioning

confidence: 99%

Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition

Suria

Chiamori

Shankar

et al. 2015

Sensors for Extreme Harsh Environments II

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Radiation-hardened electronics used in space, nuclear energy and radiation medicine applications require robust dielectric materials to be used as passivation layers and gate insulators. Thus, there is a need to understand the response of these materials under radiation exposure (e.g., gamma, neutron and proton) to develop radiation-tolerant and reliable electronic systems. In addition, as the size of transistors continues to scale down there is a need to have physically thicker dielectric layers with similar capacitance values to ultra-thin SiO2. High permittivity (high-k) dielectrics lend themselves well to this task as they have capacitance values similar to ultra-thin SiO2 while not facing issues of high leakage current and power dissipation as ultra-thin SiO2. Atomic layer deposition (ALD) of thin films has gained interest in the development of radiation-hardened electronics as this process results in high quality (continuous and pinhole-free) and conformal gate dielectric thin films with precise thickness control to the angstrom level. Here, we examine the impact of gammairradiation on plasma-enhanced ALD dielectric layers using metal-oxide semiconductor (MOS) capacitors. In this work, three ALD gate dielectric films: Al2O3, HfO2 and SiO2 (between 22 and 24 nm thick) are utilized. The capacitance-voltage (C-V) response of plasma-enhanced ALD-based MOS capacitors upon gamma irradiation (Co-60) up to 533 krad without any shielding is observed. It is shown that ALD grown HfO2 films are resistant to gamma irradiation based on the negligible shift in flat band voltage and hysteresis characteristics. Additionally, ALD grown Al2O3 films exhibited minimal generation of mobile traps but generation of trapped charges was observed. Furthermore, the flat band and hysteresis of ALD grown SiO2 films showed development of both trapped and mobile charges which may suggest that this material lends itself to radiation dosimetry applications. These initial findings support the use of plasma-enhanced ALD grown films in the development of radiation-hardened electronics and sensors.

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“…Furthermore, for silicon radiation detectors, the effect of radiation on the electrical characteristics should be known. In this way, the study of the effect of 2 MeV electron irradiation on Al 2 O 3 layers without PDA has shown [21] that the shift of the flat-band voltage of MIS capacitors towards more negative values increases with the irradiation fluence ( Fig. 9), so it should be taken into account when these layers are used in radiation detectors.…”

Section: Electrical Characteristicsmentioning

confidence: 99%

Thin dielectric films grown by atomic layer deposition: Properties and applications

Campabadal

Rafı́

González

et al. 2013

2013 Spanish Conference on Electron Devices

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Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al 2 O 3 and HfO 2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.

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2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

Cited by 23 publications

References 56 publications

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition

Thin dielectric films grown by atomic layer deposition: Properties and applications

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