2 k gate circuits with 125 ps gate delay using GaAs HFET technology

Leung, W.-B.; Lo, Yi‐Kai; Oh, Y.T.; Oswald, William; Poon, E.; Reid, C.E.; Ackner, L.E.; Poon, T.C.

doi:10.1109/gaas.1989.69293

11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium

DOI: 10.1109/gaas.1989.69293

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2 k gate circuits with 125 ps gate delay using GaAs HFET technology

W.-B. Leung

Yi‐Kai Lo

Y.T. Oh

et al.

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2 k gate circuits with 125 ps gate delay using GaAs HFET technology

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