2-in-1 total process integration in MERIE etch chamber for Cu dual damascene applications

Wu, Rongbo; Zhang, L.; Yang, Jin; Tsui, J.B.Y.; Jiang, Aiqin; Sun, Junling; Yuan, Jun; Hsieh, Peter Y.; Hung, R.; Ye, Yan; Hsueh, G.; Shieh, Jyu-Horng; Liu, Jen-Cheng; Tsai, Chia-Shueng

doi:10.1109/asmc.2000.902601

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“…These developments help to improve etching rate uniformity and result in improving via and trench CD variation within wafer. To reduce wafer-to-wafer CD variation, good repeatability and stability process and etching tool are needed [10]- [12]. For example, depositionless etching processes, sequential etching processes, and depositionless chamber design are effective for repeatability and stability.…”

Section: Introductionmentioning

confidence: 99%

Advanced CD Control Technology for 65-nm Node Dual Damascene Process

Nagase

Maruyama

Iguchi

et al. 2007

IEEE Trans. Semicond. Manufact.

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This paper describes an advanced critical dimension (CD) control technology for a 65-nm node dual damascene process and beyond. A newly developed deposition enhanced shrink etching (DESE) process was introduced into both via and trench etching. This technology realizes not only dynamic via shrink ranging 40 nm but also accurate trench CD control by feedforward technology. Etching performance was investigated by electrical results of 65-nm Cu/low-k interconnects using porous chemical-vapor deposition SiOC. The 100% yields of 60-M via chains verified the DESE process robustness.

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Section: Introductionmentioning

confidence: 99%