2+δ‐Dimensional Materials via Atomistic Z‐Welding

Abstract

Pivotal to functional van der Waals stacked flexible electronic/excitonic/spintronic/thermoelectric chips is the synergy amongst constituent layers. However; the current techniques viz. sequential chemical vapor deposition, micromechanical/wet-chemical transfer are mostly limited due to diffused interfaces, and metallic remnants/bubbles at the interface. Inter-layer-coupled 2+𝜹-dimensional materials, as a new class of materials can be significantly suitable for out-of-plane carrier transport and hence prompt response in prospective devices. Here, the discovery of the use of exotic electric field ≈10 6 V cm −1 (at microwave hot-spot) and 2 thermomechanical conditions i.e. pressure ≈1 MPa, T ≈ 200 °C (during solvothermal reaction) to realize 2+𝜹-dimensional materials is reported. It is found that P z -P z chemical bonds form between the component layers, e.g., C-B and C-N in G-BN, Mo-N and Mo-B in MoS 2 -BN hybrid systems as revealed by X-ray photoelectron spectroscopy. New vibrational peaks in Raman spectra (B-C ≈1320 cm -1 for the G-BN system and Mo-B ≈365 cm -1 for the MoS 2 -BN system) are recorded. Tunable mid-gap formation, along with diodic behavior (knee voltage ≈0.7 V, breakdown voltage ≈1.8 V) in the reduced graphene oxide-reduced BN oxide (RGO-RBNO) hybrid system is also observed. Band-gap tuning in MoS 2 -BN system is observed. Simulations reveal stacking-dependent interfacial charge/potential drops, hinting at the feasibility of next-generation functional devices/sensors.

Free‐standing δ‐MnO2 atomic sheets

“…The hybridization of various 2D materials has been used to manipulate band gaps and alter materials characteristics properties for a particular application 45 . While graphene is semi‐metallic and 2D‐MnO 2 is semiconducting.…”

“…The hybridization of various 2D materials has been used to manipulate band gaps and alter materials characteristics properties for a particular application. 45 While graphene is semi-metallic and 2D-MnO 2 is semiconducting. Looking at the possibilities in energy storage applications (flexible supercapacitors), we synthesized the 2D-2D hybrid of synthesized 2D-MnO 2 and graphene.…”

Ag‐Doped Free‐Standing 2D TiO2 Sheets: Electronic, Optical, Magnetic, and Self‐Healing Behaviour

“…[20][21][22][23][24][25] Straining, doping, and hybridization have been employed to manipulate material behavior. [26][27][28][29] 2D transition metal oxides (TMOs) are environmentally stable functional materials and have been employed especially for gate dielectric in field effect transistors (FETs), as a barrier layer in magnetic memory devices, solar cells, light emitting devices (LEDs), in catalysis, energy storage, etc. [30][31][32][33][34][35] 2D TiO 2 in particular is a robust material with a UV range (~3.3 eV) band gap and is not suitable for various visible sensitive devices/sensors.…”

“…These advanced quantum materials have been synthesized by various bottom‐up and top‐down, physical, chemical, and physico‐chemical strategies [20–25] . Straining, doping, and hybridization have been employed to manipulate material behavior [26–29] . 2D transition metal oxides (TMOs) are environmentally stable functional materials and have been employed especially for gate dielectric in field effect transistors (FETs), as a barrier layer in magnetic memory devices, solar cells, light emitting devices (LEDs), in catalysis, energy storage, etc [30–35] .…”

Transition Metal-Doped Boron Nitride Atomic Sheets with an Engineered Bandgap and Magnetization

“…Graphene − and its inorganic analogues Xenes such as borophene, − phosphorene, stanene, and germanene, 2D-gold, transition metal dichalcogenides (TMDCs), metal oxides (2DMOs), and MXenes (metal nitrides, carbides, and carbonitrides) due to their fascinating behavior have revolutionized materials science and technology where the corresponding bulk or nanomaterials do not compete with their 2D forms. − They have successfully been employed in excitonics, in molecular sensing, as oxidation-resistant laminates, as a laser shield, and in manipulation of single-photon emission. − Even though straining and hybridization have already been implemented to manipulate material properties, substitutional doping is the apt strategy to change the material intrinsically and irreversibly. − Bandgap engineering in 2D materials is essential to meet the needs of electronic, optoelectronic, spintronic, and straintronic chips, as they are mechanically flexible at a few monolayer thicknesses. , While graphene gets oxidized, molybdenum disulfide (MoS 2 ) gets structurally degraded at elevated temperatures. Therefore, for high-temperature applications of these flexible, functional chips, one needs to explore 2D materials that can withstand high temperatures, keeping structural and chemical phase qualities intact.…”