2.97-GHz CVD diamond ring resonator with Q &amp;#x003E;40,000

Naing, Thura Lin; Beyazoglu, Turker; Wu, Lingqi; Akgul, Mehmet; Ren, Zeying; Rocheleau, Tristan O.; Nguyen, C.T.-C.

doi:10.1109/fcs.2012.6243723

Cited by 15 publications

(10 citation statements)

References 17 publications

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“…Although this facilitated stem hole lithography to the point of making the process possible, it also shifted the lengths of the spoke support beams so that they no longer were quarter-wavelength. As detailed in [6], without quarter-wavelength supports, spoke-supported ring resonator Q's suffer greatly.…”

Section: B Two-ring Array-compositementioning

confidence: 99%

“…Capacitive-gap transduced resonators, on the other hand, do possess sufficient Q at the needed frequencies, with Q's greater than 40,000 already demonstrated at 3 GHz by polydiamond ring resonators [6]. Unfortunately, capacitive-gap resonators suffer in the transducer coupling department, as the (C x /C o )'s so far demonstrated at GHz frequencies are far short of the requirement when a tuning inductor is not available to remove shunt capacitance C o , as was done in [7].…”

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confidence: 99%

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Capacitive-Piezoelectric Transducers for High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Micromechanical AlN Resonators

Hung

Nguyen

2015

J. Microelectromech. Syst.

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A capacitive-piezoelectric (also known as, capacitive-piezo) transducer that combines the strengths of capacitive and piezoelectric mechanisms to achieve a combination of electromechanical coupling and Q higher than otherwise attainable by either mechanism separately, has allowed demonstration of a 1.2-GHz contour-mode aluminum nitride (AlN) ring resonator with Q > 3000 on par with the highest measured d 31 -transduced AlN-only piezoelectric resonators past 1 GHz, and a 50-MHz disk array with an even higher Q > 12 000. Here, the key innovation is to separate the piezoelectric resonator from its metal electrodes by tiny gaps to eliminate metal material and metal-to-piezoelectric interface losses thought to limit thin-film piezoelectric resonator Q, while also maintaining high electric field strength to preserve a strong piezoelectric effect. While Q increases, electromechanical coupling decreases, but the k 2 eff · Q product can still increase overall. More importantly, use of the capacitive-piezo transducer allows a designer to trade electromechanical coupling for Q, providing a very useful method to tailor Q and coupling for narrowband radio frequency (RF) channel-selecting filters for which Q trumps coupling. This capacitive-piezo transducer concept does not require dc-bias voltages and allows for much thicker electrodes that reduce series resistance without mass loading the resonant structure. The latter is especially important as resonators and their supports continue to scale toward even higher frequencies.[2013-0395]

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Section: B Two-ring Array-compositementioning

confidence: 99%

mentioning

confidence: 99%

Capacitive-Piezoelectric Transducers for High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Micromechanical AlN Resonators

Hung

Nguyen

2015

J. Microelectromech. Syst.

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“…Oscillators based on micro-electromechanical system (MEMS) resonators have recently become viable alternatives to traditional quartz versions owing to their small size, high quality factor and single-chip integration with the CMOS process. (1,2) Compared with other resonator types, vibrating MEMS capacitive disk resonators have more applications because of recent advances that yield on-chip resonators with Qs over 40000 at 3 GHz (3,4) and excellent thermal (5) and aging stabilities. (6) Unfortunately, although the Qs of the described resonators are exceptional, they are not easy to access, because impedances mismatch with systems using them.…”

Section: Introductionmentioning

confidence: 99%

Inclination Effects on Voltage-controlled Tuning of MEMS Disk Resonator Array Composite Fabricated by Deep Reactive Ion Etching Process

Yan¹,

Bao²,

Quan³

et al. 2018

Sensors and Materials

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Capacitive micro-electromechanical system (MEMS) disk resonators fabricated by deep reactive-ion etching (DRIE) have large sensitive capacitances and low motional resistances. However, for the MEMS disk structure with a high aspect ratio, the cross section takes on a trapezoidal profile, which will affect the performance of the resonator. In this study, we firstly analyzed the electrostatic tuning mechanism of electrical stiffness produced by the electrostatic force, and the dependence of resonance frequency variation on the inclination angle and dc bias voltage is obtained and the electromechanical coupling strength was changed owing to the inclination angle. Secondly, after analyzing the feasibility of overcoming the inclination effect by introducing a tuning disk array, the optimal tuning voltage of the inclined disk resonator array and the scale of the array with a small motional resistance can be obtained. The results show that, for an array with the same inclination angle of 0.1° and biased at 10 V, when the tuning voltage is 20 V, the relative error of the resonance frequency can be reduced to 12.4 ppm. In addition, the optimal tuning voltage increases as the inclination angle increases, and when the inclination angle is 0.3°, the optimal tuning voltages are 28.68 and 57.35 V for the dc bias voltages of 10 and 30 V, respectively. If the motional resistance needs be reduced to 50 Ω, the integrated number of disk resonators will increase to 1048, and the optimal tuning voltage can reach 37.5 V. These results can provide some theoretical basis for the large-scale integration of the disk resonator array in the future.

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“…In recent years, this fact has driven efforts to maximize resonator Q for use in advanced RF channel-select communication schemes that utilize a bank of narrowband filters to eliminate not only out-of-band blockers, but also in-band ones, thereby allowing use of a receiver architecture with substantially reduced power consumption [1]. Among available resonators, capacitive-gap transduced ones constructed in poly-Si or diamond easily achieve the Q's greater than 20,000 needed for RF channel-selection at GHz frequencies [2], but suffer from high motional impedance. In the meantime, resonators using piezoelectric transduction [3] offer low motional impedance but insufficient Q (~1,500) for RF channel-selection.…”

Section: Introductionmentioning

confidence: 99%

High-Q capacitive-piezoelectric AlN Lamb wave resonators

Yen

Pisano

Nguyen

2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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The use of capacitive-piezoelectric transducers, formed by separating a piezoelectric structure from its electrodes by sub-micron gaps, has raised the measured quality factor of aluminum nitride (AlN) Lamb wave resonators (LWR) from the ~1,000 of typical square-edged conventional devices (with contacting electrodes) to over 5,000 at 940 MHz, posting the highest reported Q for non-overmoded pure AlN resonators using d 31 (e 31 ) transduction at this frequency range. The Q · f product achieved here is significantly higher than that of a previous 1.2-GHz capacitive-piezoelectric contour-mode ring, mainly due to the use of Lamb wave modes that allow better support isolation to prevent energy loss to the substrate. In addition, the use of interdigital transducer (IDT) electrodes successfully decouples the resonance frequency from overall device dimensions, offering a CAD-definable design parameter for fine-frequency control. The effective coupling coefficient of k eff 2 = 0.3% achieved by this device is lower than the 1.6% typically observed for conventional AlN Lamb wave resonators, but still sufficient to avoid pass-band distortion in the 0.1% bandwidth filters needed for next-generation RF channel-selecting communication front-ends.

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2.97-GHz CVD diamond ring resonator with Q >40,000

Cited by 15 publications

References 17 publications

Capacitive-Piezoelectric Transducers for High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Micromechanical AlN Resonators

Capacitive-Piezoelectric Transducers for High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Micromechanical AlN Resonators

Inclination Effects on Voltage-controlled Tuning of MEMS Disk Resonator Array Composite Fabricated by Deep Reactive Ion Etching Process

High-Q capacitive-piezoelectric AlN Lamb wave resonators

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