2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

Xu, Ru; Chen, Peng; Liu, Menghan; Zhou, Jing; Li, Yimeng; Liu, Bin; Chen, Dunjun; Xie, Zili; Zhang, Rong; Zheng, Yi

doi:10.1016/j.sse.2020.107953

Cited by 13 publications

(4 citation statements)

References 30 publications

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“…[23,41] In order to minimize the influence of the Si substrate, a thicker GaN buffer is necessary. Just like our previous work, [33][34][35] the BV can be improved from 2.7 to 3.4 kV when the GaN buffer thickness changes from 5 to 7 µm with similar device processing. At present, the leakage introduced by the Si substrate may become a serious problem, limiting the development of UHV AlGaN/GaN SBD on Si.…”

Section: Device Simulation Studiessupporting

confidence: 64%

“…It is well known that the anode field plate (AFP) can effectively modify the EF distribution and then increase the BV. In our previous work, [33][34][35] prior to the fabrication of the SBDs on Si, we also used Silvaco-TCAD to simulate and optimize the AFP parameters. The simulated BV is highly depended on the AFP length and SiN x passivation layer thickness.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…The detailed fabrication process is shown in the Experimental Section, and some process parameters and the main results have been reported in our previous work. [33][34][35][36] For the fabrication of the SBDs on sapphire, we have different ideas evolved from our previous works on Si. First, we have known that the EF in the device is still far below the critical value of 3.4 MV cm −1 at the breakdown point, even with the optimized AFP structure.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

Chen

Zhou

et al. 2022

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GaN‐based lateral Schottky barrier diodes (SBDs) have attracted great attention for high‐power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra‐high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN‐based materials can be practically used in the UHV field? Here, UHV AlGaN/GaN SBDs are demonstrated on sapphire with a BV of 10.6 kV, a specific on‐resistance (RON,SP) of 25.8 mΩ cm2, yielding a power figure‐of‐merit (P‐FOM = BV2/RON,SP) of 4.35 GW cm−2. These devices are designed with single channel and 85‐µm anode‐to‐cathode spacing, without other additional electric field management, demonstrating its great potential for the UHV application in power electronics.

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Section: Device Simulation Studiessupporting

confidence: 64%

Section: Device Design and Fabricationmentioning

confidence: 99%

Section: Device Design and Fabricationmentioning

confidence: 99%

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High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

Chen

Zhou

et al. 2022

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“…Moreover, the various parameters of the exploding foil initiator on the flyer velocity have also been investigated from a macro point of view [15][16][17]. The macroscopic properties of materials depend not only on their chemical composition, but also, to a greater extent, on their micromorphology and grain size [18,19].…”

Section: Introductionmentioning

confidence: 99%

Effect of Grain Size and Micromorphology of Cu Foil on the Velocity of Flyer of Exploding Foil Detonator

Han

Deng

Chu³

et al. 2021

Applied Sciences

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In this paper, the effect of grain size and micromorphology of Cu foil on the velocity of the flyer of an exploding foil detonator was studied. A Cu foil with different grain sizes and micromorphologies was prepared by the physical vapor deposition sputtering method. The flyer velocity of the Cu foil was measured by the photon Doppler technique (PDT). The influence of the grain size and micromorphology of the Cu foil (which was the core transducer of the exploding foil detonator) on the flyer velocity and reacted morphology was discussed. The results show that the grain size and micromorphology of the Cu film can greatly affect the velocity and morphology of the flyer. The grain size of the Cu film is more uniform, and the stimulus response in the middle area of the bridge foil is more concentrated. In addition, the current density becomes more uniform, resulting in a better explosion performance. Consequently, the speed of the formed flyer becomes higher, leading to a smoother flyer surface, which is more conductive to energy conversion.

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Characterization and fabrication of indium doped LaPO4 as an interfacial layer of Cu/In–LaPO4/n–Si and developed for Schottky barrier diode

Priya

Mariappan²,

Chandrasekaran³

et al. 2023

J Mater Sci: Mater Electron

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2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

Cited by 13 publications

References 30 publications

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing

Effect of Grain Size and Micromorphology of Cu Foil on the Velocity of Flyer of Exploding Foil Detonator

Characterization and fabrication of indium doped LaPO4 as an interfacial layer of Cu/In–LaPO4/n–Si and developed for Schottky barrier diode

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