2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications

Gonzalez-Garrido, Maria-Angeles; Grajal, Jesús; Cubilla, Pablo; Cetronio, A.; Lanzieri, C.; Uren, M. J.

doi:10.1109/emicc.2008.4772234

Cited by 22 publications

(11 citation statements)

References 7 publications

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“…If all thermal barriers such as the chip die/CuW carrier, the CuW carrier/Al test jig and the Al test jig/Cu heat sink have good thermal contacts, the transistor that dissipates 12.28 W is estimated to have a channel temperature of 1538C with the heat sink at 308C, from the calculation using a multiple-gate thermal model and a simple Cooke model [18]. Table II shows a performance comparison of the measured results of this work and previously published results [15,[19][20][21]. As shown in Table II, the power amplifier MMIC in this work has a better return loss than that of other works and compared with Ref.…”

Section: Fabrication and Measurementmentioning

confidence: 76%

2-6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors

Bae

Kim

2016

Int J RF and Microwave Comp Aid Eng

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In this article, using a 0.25 lm GaN HEMT process, we present a 2-6 GHz GaN two-stage distributed power amplifier MMIC that utilizes tapered gate series capacitors and nonuniform drain transmission lines with tapered shunt capacitors to simultaneously obtain a linear gain enhancement and optimum load line for each transistor. By using well-derived equations to provide each transistor with the optimum load impedance and to tune the phase delay between the input and output transmission lines, the nonuniform distributed power amplifier is designed for second-stage amplification, and satisfactory performance is demonstrated. The phase balance and tapering of the gate series capacitors have a role in improving the linear gain of the two-stage amplifier. The measured data show a linear gain of 22 6 1 dB, an input/output return loss of more than 15 dB, saturated output power of 41.2-43.1 dBm under a continuous-wave mode, and a power-added efficiency of 18-22% from 2 to 6 GHz which are very competitive values compared with previous works. V C 2016 Wiley Periodicals, Inc. Int J RF and Microwave CAE 26:456-465, 2016.

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Section: Fabrication and Measurementmentioning

confidence: 76%

2-6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors

Bae

Kim

2016

Int J RF and Microwave Comp Aid Eng

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“…GaN high-electron-mobility transistor (HEMT) wideband power amplifiers have been studied for multi-mode communication systems, electronic warfare systems, and other frequency-agile systems that required high-power operation over a wide frequency range [1][2][3][4][5][6][7][8][9][10]. While the transistor gain decreases with the frequency, a wideband power amplifier requires a flat gain performance in the interested bandwidth.…”

Section: Introductionmentioning

confidence: 99%

Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems

et al. 2020

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In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer capacitors, and shunt/series resistors for low-Q matching and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) CGH60030D bare die from Wolfspeed was used as an active device, and input/output matching circuits were implemented on two different substrates using a thin-film process, relative dielectric constants of which were 9.8 and 40, respectively. A series resistor of 2.1 Ω was chosen to minimize the high-frequency loss and obtain a flat gain response. For the output matching circuit, double λ/4 shorted stubs were used to supply the drain current and reduce the output impedance variation of the transistor between the low-frequency and high-frequency regions, which also made wideband matching feasible. Single-layer capacitors effectively helped reduce the size of the matching circuit. The fabricated GaN internally matched power amplifier showed a linear gain of about 10.2 dB, and had an output power of 43.3–43.9 dBm (21.4–24.5 W), a power-added efficiency of 33.4–49.7% and a power gain of 6.2–8.3 dB at the continuous-wave output power condition, from 2.5 to 6 GHz.

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“…Some semiconductor companies have GaN HPA solutions over the [6][7][8][9][10][11][12][13][14][15][16][17][18] GHz band and several articles about reactively matched HPAs have been published up to date [5][6][7][8][9][10][11][12]. Nevertheless, most of them are manufactured outside Europe.…”

Section: Introductionmentioning

confidence: 99%

Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

Gigorro

Pascual

Martínez

et al. 2019

Int. J. Microw. Wireless Technol.

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A 6–18 GHz high-power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two-stage corporate amplifier with two and four transistors, respectively. It has been fabricated on UMS using their 0.25 µm gate length process, GH25. A study of the suitable attachment method and measurement on wafer and on jig are detailed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation with a duty cycle of 10% with a 25 µs pulse width.

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2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications

Cited by 22 publications

References 7 publications

2-6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors

2-6 GHz GaN distributed power amplifier MMIC with tapered gate-series/drain-shunt capacitors

Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems

Design and characterization of a 6–18 GHz GaN on SiC high-power amplifier MMIC for electronic warfare

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