2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-<i>k</i> Field Plate to Reduce Reverse Current

Wang, Zhizhong; Huang, Fuping; Chu, Chunshuang; Tian, Kangkai; Gong, Hehe; Sun, Na; Zhang, Yonghui; Li, Yongjian; Ye, Jiandong; Zhang, Zi-Hui

doi:10.1109/ted.2024.3388377

IEEE Trans. Electron Devices

2024

DOI: 10.1109/ted.2024.3388377

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2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current

Zhizhong Wang,

Fuping Huang,

Chunshuang Chu

et al.

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2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current

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References 43 publications

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