2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2

Wang, Yuan Gang; Gong, Haigang; Li, Yuanjie; Fu, Xiuqing; Dun, Shaobo; Han, Tao; Liu, Hongyu; Zhou, Xingye; Liang, Shixiong; Ye, Jiandong; Zhang, Rong; Bu, Aimin; Cai, Shujun; Feng, Zhihong

doi:10.1109/tpel.2021.3123940

Cited by 97 publications

(49 citation statements)

References 31 publications

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“…In contrast to third-generation semiconductors, such as GaN and SiC, β-Ga 2 O 3 possesses several advantages, including a wider bandgap, a higher breakdown field strength, and the ability to easily grow high-quality single crystals in large sizes. − As a result, β-Ga 2 O 3 -based photodetectors have demonstrated exceptional sensitivity and responsivity in the deep-ultraviolet (DUV) range, making them ideal for DUV sensing and imaging applications . Moreover, β-Ga 2 O 3 -based transistors have exhibited remarkable electron mobility, which makes them highly suitable for high-frequency and high-power electronic applications. − However, during the growth process, Ga 2 O 3 inevitably introduces oxygen vacancies, which pose significant challenges to intrinsic carrier regulation, − p-type doping, − and the formation of stable Schottky contacts. , For instance, the presence of oxygen vacancies leads to persistent photoconductivity (PPC) effects, resulting in unexpected photoconductive gains but slow response speed due to trapping effects. − Furthermore, the oxygen vacancy defects (V O ) on the surface of Ga 2 O 3 cause electrons to be transported through tunneling puncture effects that result in the high reverse leakage current of transistors. − …”

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confidence: 99%

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga₂O₃ Films through Plasma-Enhanced Technology

Guo

et al. 2023

J. Phys. Chem. Lett.

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Previous research has shown that the hybridization of N 2p and O 2p orbitals effectively suppresses the electrical activity of oxygen vacancies in oxide semiconductors. However, achieving N-alloyed Ga2O3 films, known as GaON, poses a significant challenge due to nitrogen’s limited solubility in the material. In this study, a new method utilizing plasma-enhanced chemical vapor deposition with high-energy nitrogen plasma was explored to enhance the nitrogen solubility in the material. By adjusting the N2 and O2 carrier gas ratio, we could tune the thin film’s bandgap from 4.64 to 3.25 eV, leading to a reduction in the oxygen vacancy density from 32.89% to 19.87%. GaON-based photodetectors exhibited superior performance compared to that of Ga2O3-based devices, with a lower dark current and a faster photoresponse speed. This investigation presents an innovative approach to achieving high-performance devices based on Ga2O3.

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confidence: 99%

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga₂O₃ Films through Plasma-Enhanced Technology

Guo

et al. 2023

J. Phys. Chem. Lett.

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“…The built-in potentials (V bi ) of SBD and HJD are determined to be 1.11 and 2.66 V, respectively, which are slightly larger than their V ON . This may be associated with the inhomogeneity of the potential barrier within the large electrode region (1 mm × 1 mm) [7] and the trap-mediated electron transport processes [21]. Determined from the differential slope of 1/C 2 -V plot of the SBD, the depth-profile of net donor concentration (N D ) in bulk β-Ga 2 O 3 is uniform with an average value of 3.5 × 10 17 cm −3 , as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes

Wang

Gong

et al. 2022

Sci. China Mater.

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The construction of p-NiO/n-Ga 2 O 3 heterojunction becomes a popular alternative to overcome the technological bottleneck of p-type Ga 2 O 3 for developing bipolar power devices for practical applications, whereas the identification of performance-limiting traps and the bipolar transport dynamics are still not exploited yet. To this end, the fundamental correlation of carrier transport, trapping and recombination kinetics in NiO/β-Ga 2 O 3 p + -n heterojunction power diodes has been investigated. The quantitative modeling of the temperature-dependent current-voltage characteristics indicates that the modified Shockley-Read-Hall recombination mediated by majority carrier trap states with an activation energy of 0.64 eV dominates the trap-assisted tunneling process in the forward subthreshold conduction regime, while the minority carrier diffusion with near-unity ideality factors is overwhelming at the bias over the turn-on voltage. The leakage mechanism at high reverse biases is governed by the Poole-Frenkel emissions through the β-Ga 2 O 3 bulk traps with a barrier height of 0.75 eV, which is supported by the identification of majority bulk traps with the energy level of E C − 0.75 eV through the isothermal capacitance transient spectroscopic analysis. These findings bridge the knowledge gap between bipolar charge transport and deeplevel trap behaviors in Ga 2 O 3 , which is crucial to understand the reliability of Ga 2 O 3 bipolar power rectifiers.

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“…The forward current transport mechanism in such junctions is typically recombination at low biases and trap-assisted tunneling at higher bias. 10,21–26 Promising rectifier performance has been reported with this approach, 14–36 including V B of 8.32 kV, with figure of merit 13.2 GW cm −2 . 15…”

Section: Introductionmentioning

confidence: 98%

Superior high temperature performance of 8 kV NiO/Ga₂O₃vertical heterojunction rectifiers

Chiang

Xia

et al. 2023

J. Mater. Chem. C

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2.41 kV Vertical P-Nio/n-Ga₂O₃ Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm²

Cited by 97 publications

References 31 publications

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga₂O₃ Films through Plasma-Enhanced Technology

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga₂O₃ Films through Plasma-Enhanced Technology

Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes

Superior high temperature performance of 8 kV NiO/Ga₂O₃vertical heterojunction rectifiers

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2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2

Cited by 97 publications

References 31 publications

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga2O3 Films through Plasma-Enhanced Technology

Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes

Superior high temperature performance of 8 kV NiO/Ga2O3vertical heterojunction rectifiers

Contact Info

Product

Resources

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2.41 kV Vertical P-Nio/n-Ga₂O₃ Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm²

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga₂O₃ Films through Plasma-Enhanced Technology

Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed Ga₂O₃ Films through Plasma-Enhanced Technology

Superior high temperature performance of 8 kV NiO/Ga₂O₃vertical heterojunction rectifiers