2-38 GHz Broadband Compact InGaAs PIN Switches using a 3-D MMIC Technology

Yang, Jung Gil; Eom, Hyunchul; Choi, Sunkyu; Yang, Kyounghoon

doi:10.1109/iciprm.2007.381248

Cited by 12 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 4 is the detailed topology of SPDT switch. In order to get ultra-wideband insertion loss and isolation, a series-shunt PIN diode is the most chosen configuration by researchers/designers [10][11][12][13][14][15][16]. Then, by adding more shunt diodes (Dna and Dnb), isolation can be increased by a maximum of 6 dB for each additional PIN diode [13].…”

Section: Uwb Rf Switch Designmentioning

confidence: 99%

Performance analysis of Ultra-wideband RF switch using discrete PIN diode in SC-79 package for medical application of microwave imaging

Shairi¹,

Sanusi²,

Othman³

et al. 2019

IJECE

View full text Add to dashboard Cite

<span>Microwave imaging is an emerging technology in the medical application which have similar functions as X-ray, Magnetic Resonance Imaging (MRI), and Computed Tomography scan (CT scan). In designing a microwave imaging system for medical application, it can use a monostatic radar approach by transmitting a Gaussian pulse (with an ultra-wideband (UWB) frequency). In this system, eight antennas are required with the support of RF switches. Thus, it is important to get the best performance of UWB RF switch in this application. Therefore, this paper presents the performance analysis of four different RF switch topologies (Design 1, 2, 3 and 4) using discrete PIN diode in SC-79 package. The design was based on single pole double throw (SPDT) switch. As result, Design 2 is the best topology after considering the tradeoff between isolation and return loss performances. Based on the three cascaded SPDT switches of Design 2, the insertion loss was less than -2 dB and return loss was more than -10 dB. Meanwhile, the isolation bandwidth (at the minimum isolation of -20 dB) was from 0.5 to 3.7 GHz (with 3.2 GHz bandwidth), hence, it could be used in the UWB frequency for medical application of microwave imaging.</span>

show abstract

Section: Uwb Rf Switch Designmentioning

confidence: 99%

Performance analysis of Ultra-wideband RF switch using discrete PIN diode in SC-79 package for medical application of microwave imaging

Shairi¹,

Sanusi²,

Othman³

et al. 2019

IJECE

View full text Add to dashboard Cite

show abstract

“…The thin film microstrip transmission line consists of the bottom 1 st metal ground plane, the top interconnect line, and the BCB dielectric layers. The detailed layer structure and fabrication sequence have been described elsewhere [3]. The fabricated 8 × 8 μm 2 -size InGaAs PIN diode exhibits a turn-on voltage of 0.5 V at a current of 10 mA.…”

Section: Device and Fabrication Technologymentioning

confidence: 99%

An InGaAs PIN-diode based broadband traveling-wave switch with high-isolation characteristics

Yang

Kim

Yang

2009

2009 IEEE International Conference on Indium Phosphide &Amp; Related Materials

Self Cite

View full text Add to dashboard Cite

A high-isolation broadband travelingwave switch using InGaAs PIN diodes is proposed. The circuit design and the analysis of the traveling-wave switch based on an artificial transmission line design are described. The newly proposed MMIC switch provides low insertion loss of less than 3.5 dB and high isolation of better than 39 dB from 15 GHz to 70 GHz. The significantly reduced chip size of 1.0 × 0.8 mm 2 including pads has been achieved by using the meandered microstrip lines.

show abstract

“…Switch design is possible using a variety of process technologies. The use of field effect transistors (FET) [2] or diode-based semiconductor [3,4] processes is a common means of fabricating switches. In addition to these, MEMS techniques [5], phase change materials [6], and 2D materials [7] can be used to enhance the performance of switches.…”

mentioning

confidence: 99%

220 GHz SPST switch based on PIN diode with low insertion loss and high isolation

Hao

Liang

et al. 2022

Preprint

View full text Add to dashboard Cite

In order to address the issue of 220 GHz receiver protection, a single-pole single-throw (SPST) switch based on GaAs PIN diodes is introduced in this research. The PIN diode with an I layer thickness of 400 nm and a cut-off frequency over 1.5THz was created in order to enable the SPST switch to operate in the terahertz frequency range. Therefore, a 220 GHz quasi-MMIC SPST switch was designed using GaAs PIN diodes and a 50 μm thin-film quartz foundry. The measurement reveals that the isolation is > 29 dB, insertion loss is < 3.2 dB in the frequency range of 220 GHz to 230 GHz and IP1dB is 17 dBm at 220 GHz.

show abstract

2-38 GHz Broadband Compact InGaAs PIN Switches using a 3-D MMIC Technology

Cited by 12 publications

References 7 publications

Performance analysis of Ultra-wideband RF switch using discrete PIN diode in SC-79 package for medical application of microwave imaging

Performance analysis of Ultra-wideband RF switch using discrete PIN diode in SC-79 package for medical application of microwave imaging

An InGaAs PIN-diode based broadband traveling-wave switch with high-isolation characteristics

220 GHz SPST switch based on PIN diode with low insertion loss and high isolation

Contact Info

Product

Resources

About