1D Hexagonal HC(NH₂)₂PbI₃for Multilevel Resistive Switching Nonvolatile Memory

Abstract

Organic–inorganic halide perovskite is regarded as one of the potential candidates for next generation resistive switching memory (memristor) material because of fast, millivolt‐scale switching, multilevel capability, and high On/Off ratio. Here, resistive switching property of HC(NH2)2PbI3 (FAPbI3) depending on structural phase is reported. It is found that 1D hexagonal FAPbI3 (δ‐FAPbI3), formed at relatively low temperature, is active in memristor, while 3D trigonal FAPbI3 (α‐FAPbI3), formed at temperature higher than 150 °C, is inactive. Failure of switching from low resistance state to high resistance state is found for α‐FAPbI3, while δ‐FAPbI3 shows stable switching behavior. Density functional calculation reveals that iodine cluster in isotropic 3D α‐FAPbI3 is so stable after forming filament that the filament is hard to be ruptured at off state. However, for anisotropic δ‐FAPbI3, iodine cluster is not stable and migration barrier is much lower for c‐axis (0.48 eV) than for ab‐plane (0.9 eV), which is beneficial for switching. The memristor devices based on δ‐FAPbI3 demonstrate endurance up to 1200 cycles with On/Off ratio (>105), retention time up to 3000 s, multilevel storage capacity, and working even at 80 °C.

Photoassisted Electroforming Method for Reliable Low‐Power Organic–Inorganic Perovskite Memristors

“…For the PAE‐treated cell, I RESET and the power consumption are reduced to as low as ≈0.06 mA and ≈0.12 mW, and the corresponding energy consumption ( J = I RESET * V RESET *reset time) is estimated to be ≈4.90 pJ per bit in the pulse operation mode. The I RESET and power consumption obtained here are far lower than those of most reported organic–inorganic hybrid perovskite‐based memristors [ 5,6,8,26–33 ] (see Table 1). One exception is the study by Ren et al, [ 34 ] who programed a layered perovskite single‐crystal ((PEA) 2 PbBr 4 )‐based memristor with extremely low I RESET /power consumption (3 × 10 −9 mA/3 pW).…”

Silver Iodide Induced Resistive Switching in CsPbI3 Perovskite‐Based Memory Device

“…Interestingly, these hysteresis phenomena are favorable for resistive switching and further provide an opportunity for lead halide perovskites as active layers to apply in memory devices. Therefore, lead halide perovskites‐based memory devices recently receive considerable interest, and they exhibit more outstanding performances, such as, low operating voltage, high on/off ratio, multilevel data storage, good mechanical flexibility, and light sensitivity …”

Memristors with organic‐inorganic halide perovskites

“…Memristive behavior might be related to the OHP crystal structure because ionic migration in OHPs strongly depends on their structural dimensionality. Yang et al investigated the structure‐memristive characteristic relationship of formamidinium lead iodide (HC(NH 2 ) 2 PbI 3 (FAPbI 3 )) with two different crystal structures: 3D black trigonal FAPbI 3 ( α ‐FAPbI 3 ) and 1D yellow hexagonal FAPbI 3 ( δ ‐FAPbI 3 ). The Ag/FAPbI 3 /Pt memristor (Ag and Pt, see Figure A) was formed by Lewis acid‐base adduct method.…”

“…Initial I‐V curves for cells with FAPbI 3 layer annealed at C, 75, D, 100, E, 125, F, 150, and G, 175°C. H, XRD patterns of FAPbI 3 films annealed at temperatures from 75 to 175°C . XRD, X‐ray diffraction…”

“…Memristive behavior might be related to the OHP crystal structure because ionic migration in OHPs strongly depends on their structural dimensionality. Yang et al 101 investigated the structure-memristive characteristic relationship of formamidinium lead iodide (HC(NH 2 ) 2 PbI 3 (FAPbI 3 )) with two different crystal structures: 3D black trigonal FAPbI 3 (α-FAPbI 3 ) and 1D yellow hexagonal Pt, see Figure 6A) was formed by Lewis acid-base adduct method. The FAPbI 3 films coated on Pt substrates were annealed with different temperatures ranging from 75 C to 175 C. In Figure 6H X-ray diffraction pattern for the FAPbI 3 film annealed at temperatures below 125 C can be indexed to be δ-FAPbI 3 , indicating that the δ phase is dominant in FAPbI 3 annealed at low temperature.…”