193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids

Houlihan, Francis M.; Kometani, J. M.; Timko, Allen G.; Hutton, R. S.; Cirelli, Raymond A.; Reichmanis, Elsa; Nalamasu, Omkaram; Gabor, Allen H.; Medina, Arturo N.; Biafore, John J.; Slater, Sydney G.

doi:10.1117/12.312462

Cited by 11 publications

(3 citation statements)

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“…Houlihan et al studied the performance of photogenerators of sulfamic acids in chemically amplified single layer resists. 1 Allen et al 2 studied the effects of structural changes in triflic acid generators on the performance of 193 nm resists.…”

Section: Introductionmentioning

confidence: 99%

Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging

Croffie

Yuan

Cheng

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We present recent modeling work aimed at understanding the influence of structural changes in photoacid generators ͑PAGs͒ on acid generation efficiency, deprotection efficiency, and photoacid diffusion in 193 nm chemically amplified resists. An analytical model for the postexposure bake process is used to study the reaction and diffusion properties of the various acids generated by the PAGs. Fourier transfer infrared spectroscopy is used to monitor the generation of photoacid during exposure. Resist thickness loss after PEB as a function of exposure dose is related to the deprotection extent to extract the reaction rate parameters. The effects of the acid size and boiling point on process latitude, line end shortening, and line edge roughness are presented. Analytical model predictions of process latitude and line end shortening are also presented and compared to experimental data. In this study, the photogenerated acid with the smallest molar volume and highest boiling point temperature gave the best overall lithographic performance.

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Section: Introductionmentioning

confidence: 99%

Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging

Croffie

Yuan

Cheng

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The issue of outgassing has been greatly resolved by adjusting the chemistry of photoacid generator (PAG) in the formulation. The group at Lucent Technologies [8] has reported a new class of cyclamic acid generating PAGs. These PAGs require UV exposure as well as heating for complete photoacid generation, hence the subsequent acidolysis reaction takes place only during the post-exposure heating step.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Acetal-Based BUY Resists

Malik¹,

Blakeney²,

Ferreira³

et al. 1999

J. Photopol. Sci. Technol.

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Physical and lithographic properties of structurally diverse acetal-derivatized hydroxy styrene polymers are reported. The dissolution and thermal properties of the acetalblocked polymers vary with the size of the pendent acetal moiety. The lithographic performance of the resists containing "bulky" acetal-derivatized polymers was found to be superior to those containing non-bulky acetal functionalized polymers. In the cases where the acidolysis products of the bulky acetal-based polymers are non-volatile alcohols, the post-exposure volatilization, film shrinkage and plasma etch resistance were found to be significantly improved. Bulky acetal-derivatized polymers also show excellent thermal and shelf life stability.

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“…During the last few years, researchers in this field have exploited several classes of new polymers for use in 193nm lithography [1][2][3][4][5][6]. These are functionalized poly(acrylates), alternating polymers of cyclicolefin and maleic anhydride, and homopolymers of cyclicolefins.…”

Section: Introductionmentioning

confidence: 99%

IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance.

Varanasi

Mewherter

Lawson

et al. 1999

J. Photopol. Sci. Technol.

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193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids

Cited by 11 publications

References 0 publications

Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging

Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging

Recent Advances in Acetal-Based BUY Resists

IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance.

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