193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED
Chenglong Xu,
Kunzi Liu,
Zhehan Yu
et al.
Abstract:The high acceptor ionization energy and, thus, low carrier concentration in p-type III-nitride have widely been recognized as the bottleneck preventing the development of high-efficiency light-emitting-diodes (LEDs). In this contribution, the influences of 193 nm pulsed laser annealing on the structure, electrical, and optical properties of p-type GaN were systematically analyzed. The hole concentration of p-GaN first increases and then decreases with increasing laser fluence, regardless of post-growth thermal… Show more
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