2008
DOI: 10.1063/1.2840178
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193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

Abstract: Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride (cBN) films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at 180nm with a very sharp cutoff wavelength at 193nm and a visible rejection ratio (180 versus 250nm) of more than four orders of magnitude. The characteristics of the photodetectors presen… Show more

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Cited by 95 publications
(59 citation statements)
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“…90,94) The bandwidth can reach GHz range. Besides, BN based PDs begin to attract substantial attentions for solar-blind detection [102][103][104] due to a wide bandgap of 5.2 eV (hexagonal BN) or 6.4 eV (cubic BN). 116) In addition, groups of novel materials including ZnO, 105,106) Ga 2 O 3 , 107-109) MgZnO, [110][111][112] and two-dimensional (2D) perovskite 113) and nanostructures in the form of superlattice (SL), 103) nanowires (NWs), core-shell structures 109) have emerged thanks to the advances in material growth and fabrication techniques.…”
Section: Detectorsmentioning
confidence: 99%
See 1 more Smart Citation
“…90,94) The bandwidth can reach GHz range. Besides, BN based PDs begin to attract substantial attentions for solar-blind detection [102][103][104] due to a wide bandgap of 5.2 eV (hexagonal BN) or 6.4 eV (cubic BN). 116) In addition, groups of novel materials including ZnO, 105,106) Ga 2 O 3 , 107-109) MgZnO, [110][111][112] and two-dimensional (2D) perovskite 113) and nanostructures in the form of superlattice (SL), 103) nanowires (NWs), core-shell structures 109) have emerged thanks to the advances in material growth and fabrication techniques.…”
Section: Detectorsmentioning
confidence: 99%
“…Table II summarizes the performance of semiconductor based solar-blind PDs. 88,[96][97][98][99][100][101][102][103][104][105][106][107][108][109][110][111][112][113] The table is ordered by the use of different groups of materials. As indicated in the table, III-nitride based PDs are among the first and ideal choices for high efficiency and high-speed devices.…”
Section: Detectorsmentioning
confidence: 99%
“…cBN is also very interesting because it is the semiconductor with the lowest cutoff (180 nm), making it a great material for the study of the UV Sun. Figure 3 shows the relative photoresponse of different photodetectors (Soltani 2008;Benmoussa 2008aBenmoussa , 2008b) From left to right: MSM cBN at +30 V(dark yellow), MSM AlN at +30 V(pink), diamond MSM at +5 V(light blue), MSM Al 0.8 Ga 0.2 N at +20 V, Al 0.5 Ga 0.5 N at +20 V and Schottky GaN diode at -1V. The very sharp cutoff match with the expected one from the bulk materials (see IOFFE we site) i.e.…”
Section: Monopixels Detectors and The Lyra Uv Radiometermentioning
confidence: 99%
“…The experimental details and the high crystallinity of the c-BN films deposited are reported elsewhere [22][23][24][25]. In this work, 1 µm thick c-BN films were grown on the 4 µm thick diamond interlayer (see Fig.…”
Section: C-bn Msm Photodiodesmentioning
confidence: 99%