19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology

Fackenthal, R.; Kitagawa, Makoto; Otsuka, Wataru; Prall, Kirk; Mills, D.; Tsutsui, Keiichi; Javanifard, J.; Tedrow, K.; Tsushima, Tomohito; Shibahara, Y.; Hush, Glen

doi:10.1109/isscc.2014.6757460

Cited by 150 publications

(61 citation statements)

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“…While there are still obstacles before RRAM captures a sizable market share from classical memory and storage technologies, the initial efforts are considered fruitful. At present, several companies have started offering RRAM products in the market [19][20][21] , with a path towards 16 Gb already demonstrated 22 . The first commercial market for RRAM devices is likely to be embedded memories, while further developments can eventually bring RRAM products to the standalone memory and storage market 23 .…”

Section: Nature Electronicsmentioning

confidence: 99%

“…64 Ref. Stateful logic prototype 45 Complementary RRAM 17 Hybrid crossbar/CMOS chip 52 Embedded RRAM (28 nm) 21 Commercial RRAM microcontroller 19 Perceptron pattern classification 28 Memristive neuristor 75 16 Gb RRAM prototype 22 12 x 12 perceptron system 30 Memristor dot-product engine 18 Spiking neural network prototype PersPective Nature electroNics change of a second state variable that represents the synaptic weight (for example, filament size). This level of biorealistic implementation at the device level can be extremely attractive in realizing bioinspired networks without increasing system cost.…”

Section: The Role Of Chemistry and Biological Detailsmentioning

confidence: 99%

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The future of electronics based on memristive systems

2018

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Section: Nature Electronicsmentioning

confidence: 99%

Section: The Role Of Chemistry and Biological Detailsmentioning

confidence: 99%

The future of electronics based on memristive systems

2018

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“…1 RS-NVM consists of dielectrics sandwiched by two metal electrodes, 2 in which switching processes depend on the resistive changes due to the formation and rapture of nanometer-sized conduction pathway in a dielectric layer. Therefore, RS-NVMs have superior scaling properties as well as high switching rate, long retention time, and low power consumption.…”

mentioning

confidence: 99%

Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

Liu

Wang

et al. 2015

Applied Physics Letters

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In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/AlxOy/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in AlxOy layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.

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“…However, this system requires 0.36 mm 2 area and a power consumption of 1.9 mW for only 128 presynapses and 8,192 “stop-learning” synapses which corresponds to roughly 2.27 × 10 4 synapses/mm 2 and an energy requirement of 0.23 nJ to 0.23 mJ per synapse. By contrast, 16 Gb ReRAM ion-conducting, chalcogenide-based memory chips have been fabricated at the 27 nm node (Fackenthal et al, 2014) which have a total area of 168 mm 2 , including all periphery circuits required of a memory chip, as well as the memory elements. The memory elements on this chip, CuTe-based ion-conducting devices, are actually memristors, thus providing a good analogy to a high density memristor array.…”

Section: Discussionmentioning

confidence: 99%

“…The scalability is predicted to be easily below 20 nm due to the one dimensional aspect of device operation (based on success at 27 nm node of CuTe-based 16 Gb memory; Fackenthal et al, 2014). …”

Section: Introductionmentioning

confidence: 99%

Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses

Campbell

Drake

Smith

2016

Front. Bioeng. Biotechnol.

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Ion-conducting memristors comprised of the layered materials Ge2Se3/SnSe/Ag are promising candidates for neuromorphic computing applications. Here, the spike-timing dependent plasticity (STDP) application is demonstrated for the first time with a single memristor type operating as a synapse over a timescale of 10 orders of magnitude, from nanoseconds through seconds. This large dynamic range allows the memristors to be useful in applications that require slow biological times, as well as fast times such as needed in neuromorphic computing, thus allowing multiple functions in one design for one memristor type—a “one size fits all” approach. This work also investigated the effects of varying the spike pulse shapes on the STDP response of the memristors. These results showed that small changes in the pre- and postsynaptic pulse shape can have a significant impact on the STDP. These results may provide circuit designers with insights into how pulse shape affects the actual memristor STDP response and aid them in the design of neuromorphic circuits and systems that can take advantage of certain features in the memristor STDP response that are programmable via the pre- and postsynaptic pulse shapes. In addition, the energy requirement per memristor is approximated based on the pulse shape and timing responses. The energy requirement estimated per memristor operating on slower biological timescales (milliseconds to seconds) is larger (nanojoules range), as expected, than the faster (nanoseconds) operating times (~0.1 pJ in some cases). Lastly, the memristors responded in a similar manner under normal STDP conditions (pre- and post-spikes applied to opposite memristor terminals) as they did to the case where a waveform corresponding to the difference between pre- and post-spikes was applied to only one electrode, with the other electrode held at ground potential. By applying the difference signal to only one terminal, testing of the memristor in various applications can be achieved with a simplified test set-up, and thus be easier to accomplish in most laboratories.

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19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology

Cited by 150 publications

References 1 publication

The future of electronics based on memristive systems

The future of electronics based on memristive systems

Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

Pulse Shape and Timing Dependence on the Spike-Timing Dependent Plasticity Response of Ion-Conducting Memristors as Synapses

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