18% Efficiency IBC Cell With Rear-Surface Processed on Quartz

Dross, Frédéric; O’Sullivan, Barry; Debucquoy, Maarten; Bearda, Twan; Govaerts, Jonathan; Labie, Riet; Loozen, Xavier; Granata, Stefano; Daïf, Ounsi El; Trompoukis, Christos; Nieuwenhuysen, Kris Van; Meuris, Marc; Gordon, Ivan; Posthuma, Niels; Baert, Kasper; Poortmans, Jef; Boulord, C.; Beaucarne, G.

doi:10.1109/jphotov.2013.2239359

Cited by 12 publications

(21 citation statements)

References 11 publications

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“…The best results of the previous i 2 -module demonstrator cells are also reported for reference and named Hybrid [19]. The main difference between the previous and the present attempt is the emitter formation and its passivation.…”

Section: A Cell Characterizationmentioning

confidence: 69%

“…The cleaning process involves thermal oxide stripping by buffered HF (1:2 in water, cleaning sequence, which is not compatible with the silicone adhesive [19]. Finally, the rear surface is chemically oxidized in a H 2 O:HCl:H 2 O 2 solution (5:1:1, 25 • C, 20 min) to protect it from atmospheric contamination.…”

Section: Device Processmentioning

confidence: 99%

“…The main difference between the previous and the present attempt is the emitter formation and its passivation. In [19], the emitter is diffused and passivated by PECVD-deposited SiO x . Both processes are performed prior to bonding at temperatures above 300 • C. In the HJ and HJ ITO, the emitter and the passivation [16].…”

Section: A Cell Characterizationmentioning

confidence: 99%

“…In this paper, the a-Si:H /c-Si HJ technology is implemented in the fabrication and passivation of emitters for i 2 -module demonstrator cells and replaces the conventional high-temperature methods used in the previous trial [19]. The demonstrator cells are fabricated on 200-μm-thick wafers bonded to glass.…”

mentioning

confidence: 99%

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Heterojunction Interdigitated Back-Contact Solar Cells Fabricated on Wafer Bonded to Glass

Granata¹,

Aleman²,

Bearda³

et al. 2014

IEEE J. Photovoltaics

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Future wafer-based silicon solar cells will be fabricated on thin (<140 μm) wafers. However, technologies to handle thin wafers during cell processing are not yet available for industry. In this paper, a flow to handle thin wafers during rear side cell processing is developed and demonstrated on 4-in 200 μm-thick wafers. The flow involves bonding the wafers to glass after frontside processing followed by a low-temperature p-n heterojunction formation on the rear side. 2.5 × 2.5 cm 2 amorphous/crystalline silicon heterojunction interdigitated back-contact solar cells are fabricated by use of lithography while bonded to glass, and they show an efficiency of up to 17.7%. Shunts, infrared light absorption, and rear side interface passivation are identified as the main efficiency losses. Dedicated experiments suggest that the passivation losses are related to the degradation of the adhesive during wafer cleaning. Hence, methods to improve the compatibility of the adhesive with the cleaning process are discussed. Index Terms-Heterojunction silicon solar cells, interdigitatedback-contact (i-BC), superstrate processing.

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Section: A Cell Characterizationmentioning

confidence: 69%

Section: Device Processmentioning

confidence: 99%

Section: A Cell Characterizationmentioning

confidence: 99%

mentioning

confidence: 99%

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Heterojunction Interdigitated Back-Contact Solar Cells Fabricated on Wafer Bonded to Glass

Granata¹,

Aleman²,

Bearda³

et al. 2014

IEEE J. Photovoltaics

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“…The process flow of this novel module concept is described in more detail in previous publications. 4,5 In short, thin n-doped wafers with front side texturing and ARC (anti-reflective coating) layers, and at the back a blanket B-diffused c-Si emitter are bonded to glass by a silicone layer. Patterning of the emitter, deposition, and patterning of the i/n þ a-Si BSF (back-surface-field) contact and metallization are all performed on module level when semi-processed cells are attached to the glass front sheet.…”

Section: Introductionmentioning

confidence: 99%

Resistance and passivation of metal contacts using n-type amorphous Si for Si solar cells

Labie

Bearda

Daïf

et al. 2014

Journal of Applied Physics

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A low fill factor remains one of the critical issues for successful implementation of amorphous Si layers in back-contact solar cells. In this work, the metal-phosphorous doped hydrogenated amorphous silicon (a-Si:H) contact is studied in terms of contact resistance while maintaining a high passivation level of the crystalline silicon bulk material after metal deposition and during long-term solar cell operation. On top of these contacting and passivation-preservation requirements, the metal back-surface reflection has to be large in order to reflect as much light as possible to generate high output current densities. Two different contact metals, Al and Ti, with Ti being combined in a stack with either Al, Pd/Ag or Cu, are investigated. For these two metals with comparable metal work function, the material choice shows only a minimal effect on the contact resistance value. The main parameters for obtaining a low-resistive, ohmic contact lie in the tuning of the n+ a-Si:H layer thickness and the application of a thermal annealing step. Contact resistance values down to 10 mΩ cm2 are obtained on an intrinsic/n+ a-Si:H layer stack with a remaining effective lifetime of several milliseconds after metallization and anneal. It is shown that a thin Ti (5 nm) layer is needed in order to obtain a thermally stable contact that guarantees a reliable long-term solar cell operation. The optical disadvantage of having Ti at the backside of a Si solar cell can be compensated by combining this very thin Ti layer with Cu. This results in an improvement of the back-reflectance compared to a direct Al contact.

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Light Trapping in Ultrathin Monocrystalline Silicon Solar Cells

Gao

Park

et al. 2013

Advanced Energy Materials

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Light‐trapping schemes implemented with ultrathin, 3 μm thick silicon solar cells offer excellent opportunities for greatly enhanced absorption and corresponding improvements in efficiency of operation. Optically optimized cells of this type yield energy conversion efficiencies that are higher by ≈190% compared to otherwise identical cells that do not exploit light‐trapping features, consistent with optical modeling results.

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18% Efficiency IBC Cell With Rear-Surface Processed on Quartz

Cited by 12 publications

References 11 publications

Heterojunction Interdigitated Back-Contact Solar Cells Fabricated on Wafer Bonded to Glass

Heterojunction Interdigitated Back-Contact Solar Cells Fabricated on Wafer Bonded to Glass

Resistance and passivation of metal contacts using n-type amorphous Si for Si solar cells

Light Trapping in Ultrathin Monocrystalline Silicon Solar Cells

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