17.3 A 14b 16GS/s Time-Interleaving Oirect-RF Synthesis OAe with T-OEM Achieving -70dBc IM3 up to 7.8GHz in 7nm

Tseng, Wei-Hsin; Lin, Willy; Hsu, Chia-Yang; Huang, Changyang; Lin, Yeong-Jyh; Huang, Hung-Yi; Chen, HsinWei; Liao, Shenghui; Chen, Kuan-Dar; Strange, Jon; Manganaro, Gabriele

doi:10.1109/isscc42615.2023.10067459

Cited by 2 publications

(2 citation statements)

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“…However, a large ε O1 will slightly increase the noise floor in the DQS structure. On the other hand, the OSEs and SSEs are independent on the output impedance of the current source, indicating that the harmonic distortion (e.g., (13)) cannot be reduced by increasing output impedance. As depicted in Figure 6a, SFDR attenuation from ε f 1 is notably worse at low frequencies compared with ε O1 , yet ε O1 's attenuation intensifies more steeply as frequency rises.…”

Section: Boundary Effect Errors (Bees)mentioning

confidence: 99%

“…Nevertheless, studies have shown that DACs still suffer from harmonic distortion with the DEM scheme [12], as they are also affected by output-dependent modulation (ODM). Conventional DEM only deals with mismatches of an individual DAC; a new time-interleaving DEM (T-DEM) that randomizes the residual offset, gain, and skew mismatches is introduced in [13]. T-DEM tackles the mismatches between the two DACs, reducing the constraint of TI spur on the performance of high-speed TI DACs.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and Mitigating Output-Dependent Modulation in Current-Steering DAC Based on Differential-Quad Switching Scheme

Sun,

Zhang,

Shan

et al. 2024

Electronics

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This brief presents a comprehensive analysis of the output-dependent modulation (ODM) in a current-steering digital-to-analog converter (CS-DAC) based on the differential-quad switching (DQS) structure. A mathematical model is proposed to accurately describe ODM, which is categorized into two types: output transition errors and boundary effect errors. A novel approach of adding isolation devices is introduced and reinterpreted to mitigate the effect of ODM. The simulation results indicate that the inclusion of isolation devices efficiently suppresses the odd harmonics at mid-to-high frequency by a value that is 13 dB lower than before. Experimental validation is conducted on a 16-bit 250 MS/s CS-DAC fabricated in a 180 nm process.

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Section: Boundary Effect Errors (Bees)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%